Abstract: An operator protective guard which can ensure strength and is easily manufactured and assembled is provided. A front guard includes a plurality of first plate members and second plate members each made of one plate. The first plate members and the second plate members are assembled in a grid pattern such that a first longitudinal direction of each of the first plate members intersects with a second longitudinal direction of each of the second plate members. The plurality of the first plate members are arranged radially as seen in the longitudinal direction. The plurality of the second plate members are arranged radially as seen in the longitudinal direction. A slit is formed in the first plate member, and the second plate member is fitted in the slit and fixed by welding.

Abstract: In a bipolar silicon carbide semiconductor device in which an electron and a hole recombine with each other during current passage within a silicon carbide epitaxial film grown from a surface of a silicon carbide single crystal substrate, an object described herein is the reduction of defects which are the nuclei of a stacking fault which is expanded by current passage, thereby suppressing the increase of the forward voltage of the bipolar silicon carbide semiconductor device. In a method for producing a bipolar silicon carbide semiconductor device, the device is subjected to a thermal treatment at a temperature of 300° C. or higher in the final step of production. Preferably, the above-mentioned thermal treatment is carried out after the formation of electrodes and then the resulting bipolar silicon carbide semiconductor device is mounted in a package.

Abstract: In a bipolar silicon carbide semiconductor device in which an electron and a hole recombine with each other during current passage within a silicon carbide epitaxial film grown from a surface of a silicon carbide single crystal substrate, an object described herein is the reduction of defects which are the nuclei of a stacking fault which is expanded by current passage, thereby suppressing the increase of the forward voltage of the bipolar silicon carbide semiconductor device. In a method for producing a bipolar silicon carbide semiconductor device, the device is subjected to a thermal treatment at a temperature of 300° C. or higher in the final step of production. Preferably, the above-mentioned thermal treatment is carried out after the formation of electrodes and then the resulting bipolar silicon carbide semiconductor device is mounted in a package.

Abstract: Left and right heat radiating plates are mounted on the rear side of a liquid crystal display panel in respective left and right positions thereon. The left and right heat radiating plates are of a substantially L-shaped cross section including a plurality of fins and respective supports near the center of the rear side of the liquid crystal display panel. A central rear cover has a plurality of fins and has left and right ends fixedly mounted respectively on the supports of the left and right heat radiating plates in covering relation to a circuit assembly on the rear side of the liquid crystal display panel. Left and right rear covers are mounted respectively on rear sides of the left and right heat radiating plates and lie substantially flush with the central rear cover.

Abstract: Left and right heat radiating plates are mounted on the rear side of a liquid crystal display panel in respective left and right positions thereon. The left and right heat radiating plates are of a substantially L-shaped cross section including a plurality of fins and respective supports near the center of the rear side of the liquid crystal display panel. A central rear cover has a plurality of fins and has left and right ends fixedly mounted respectively on the supports of the left and right heat radiating plates in covering relation to a circuit assembly on the rear side of the liquid crystal display panel. Left and right rear covers are mounted respectively on rear sides of the left and right heat radiating plates and lie substantially flush with the central rear cover.

Abstract: An outer frame has an outer frame upper side plate, an outer frame lower side plate, an outer frame left side plate, and an outer frame right side plate. In an upper right corner, a transparent upper side plate, a transparent right side plate, and holders are applied to inner surfaces of the outer frame upper side and the outer frame right side plate, and are held together by a corner joint and a corner bracket that are inserted into a right end of the outer frame upper side plate and the outer frame right side plate. Upper left, lower left, and lower right corners are similarly assembled.