Abstract: This invention provides a paste composition that enables a silicon germanium layer to be formed safely and easily, and a method for forming a silicon germanium layer safely and easily. The present invention provides a paste composition for forming a silicon germanium layer, the composition comprising aluminum and germanium, wherein the content of the germanium is more than 1 part by mass and 10000 parts by mass or less, per 100 parts by mass of the aluminum.

Abstract: Provided is a paste composition that enables the formation of a diffusion layer with a high concentration of n-type dopant element on a semiconductor substrate in a simple manner. The paste composition is intended to form a film on a semiconductor substrate. The paste composition contains an aluminum powder, a compound containing an n-type dopant element, a resin, and a solvent. The n-type dopant element is one, two, or more elements selected from the group consisting of phosphorus, antimony, arsenic, and bismuth. The content of the n-type dopant element in the n-type dopant element-containing compound is 1.5 parts by mass or more and 1000 parts by mass or less, per 100 parts by mass of aluminum contained in the aluminum powder.

Abstract: This invention provides a paste composition that enables a silicon germanium layer to be formed safely and easily, and a method for forming a silicon germanium layer safely and easily. The present invention provides a paste composition for forming a silicon germanium layer, the composition comprising aluminum and germanium, wherein the content of the germanium is more than 1 part by mass and 10000 parts by mass or less, per 100 parts by mass of the aluminum.

Abstract: Provided is a paste composition that enables the formation of a diffusion layer with a high concentration of n-type dopant element on a semiconductor substrate in a simple manner. The paste composition is intended to form a film on a semiconductor substrate. The paste composition contains an aluminum powder, a compound containing an n-type dopant element, a resin, and a solvent. The n-type dopant element is one, two, or more elements selected from the group consisting of phosphorus, antimony, arsenic, and bismuth. The content of the n-type dopant element in the n-type dopant element-containing compound is 1.5 parts by mass or more and 1000 parts by mass or less, per 100 parts by mass of aluminum contained in the aluminum powder.

Abstract: A catalyst for purifying exhaust gases includes a substrate, and a catalytic layer. The catalytic layer includes a lower catalytic layer, a first upper catalytic layer, and a second upper catalytic layer. The lower catalytic layer being loaded with Pd and/or Pt is formed on the substrate. The first upper catalytic layer being loaded with Pd covers an upstream side of the lower catalytic layer, and exhibits a concentration of loaded Pd that falls in a range of from 4.5 to 12% by mass when the entirety of the first upper catalytic layer is taken as 100% by mass. The second upper catalytic layer being loaded with Rh covers a downstream side of the lower catalytic layer.

Abstract: Disclosed is a corrosion resistant member comprising a sintered material having an ?-Al2O3 crystal and an YAG (yttrium-aluminum-garnet) crystal. The corrosion resistant member contains metal elements, 70 to 98% by mass (inclusive) of Al in terms of Al2O3 and 2 to 30% by mass of Y in terms of Y2O3. The corrosion resistant member has a peak intensity ratio I116/I104 within the range from 0.94 to 1.98, preferably. 2.21 or higher, wherein I116 and I104 represent peak intensities attributed to the (116) face and the (104) face, respectively, of an ?-Al2O3 crystal as measured by X-ray diffractometry on its surface layer.

Abstract: A catalyst for purifying exhaust gases includes a substrate, and a catalytic layer. The catalytic layer includes a lower catalytic layer, a first upper catalytic layer, and a second upper catalytic layer. The lower catalytic layer being loaded with Pd and/or Pt is formed on the substrate. The first upper catalytic layer being loaded with Pd covers an upstream side of the lower catalytic layer, and exhibits a concentration of loaded Pd that falls in a range of from 4.5 to 12% by mass when the entirety of the first upper catalytic layer is taken as 100% by mass. The second upper catalytic layer being loaded with Rh covers a downstream side of the lower catalytic layer.

Abstract: The present invention relates to a magnetic head substrate comprising a sintered body containing 35% by mass to 60% by mass of alumina and 40% by mass to 65% by mass of a conductive compound. The conductive compound contains at least one selected from carbide, nitride and carbonitride of tungsten. The sintered body has a maximum crystal particle size of 4 ?m or less (except for 0 ?m). Furthermore, the present invention provides a magnetic head provided with a slider formed of the magnetic head substrate and a recording medium driving device provided with the magnetic head.

Abstract: A corrosion resistant member comprising a base material made of ceramics or a metal and at least one layer of corrosion resistant film formed on the surface of the former. At least one layer of the corrosion resistant film is a corrosion resistant film formed from a compound of the group 3 element as the main component and has specific characteristics so that it can improve film property.

Abstract: A corrosion resistant member comprising a base material made of ceramics or a metal and at least one layer of corrosion resistant film formed on the surface of the former. At least one layer of the corrosion resistant film is a corrosion resistant film formed from a compound of the group 3 element as the main component and has specific characteristics so that it can improve film property.

Abstract: Disclosed is a corrosion resistant member comprising a sintered material having an ?-Al2O3 crystal and an YAG (yttrium-aluminum-garnet) crystal. The corrosion resistant member contains metal elements, 70 to 98% by mass (inclusive) of Al in terms of Al2O3 and 2 to 30% by mass of Y in terms of Y2O3. The corrosion resistant member has a peak intensity ratio I116/I104 within the range from 0.94 to 1.98, preferably. 2.21 or higher, wherein I116 and I104 represent peak intensities attributed to the (116) face and the (104) face, respectively, of an ?-Al2O3 crystal as measured by X-ray diffractometry on its surface layer.

Abstract: A corrosion resistant member comprising a base material made of ceramics or a metal and at least one layer of corrosion resistant film formed on the surface of the former. At least one layer of the corrosion resistant film is a corrosion resistant film formed from a compound of the group 3 element as the main component and has specific characteristics so that it can improve film property.

Abstract: There is provided a ceramic member for semiconductor manufacturing equipment which is formed of an alumina-based sinter containing an yttrium-aluminum-garnet at the amount of 3 to 50 wt %, silicon oxide at the amount of not more than 0.2 wt %, preferably 0.1 wt %, and the balance substantially alumina, wherein the sinter has dielectric loss of not more than 4×10?4 particularly 2.5×10?4 or less in the frequency range of 10 MHz to 5 GHz. Such a member may be formed of a ceramic sinter including an aluminum phase having mean crystal grain size in a range of 2 to 10 ?m and a yttrium-aluminum-garnet phase having a mean crystal grain size in a range of 1.5 to 5 ?m, wherein the ratio of the mean crystal grain size of the alumina phase to that of the yttrium-aluminum-garnet phase is larger than 1 and smaller than 7.

Abstract: A corrosion resistant member comprising a base material made of ceramics or a metal and at least one layer of corrosion resistant film formed on the surface of the former. At least one layer of the corrosion resistant film is a corrosion resistant film formed from a compound of the group 3 element as the main component and has specific characteristics so that it can improve film property.

Abstract: There is provided a ceramic member for semiconductor manufacturing equipment which is formed of an alumina-based sinter containing an yttrium-aluminum-garnet at the amount of 3 to 50 wt %, silicon oxide at the amount of not more than 0.2 wt %, preferably 0.1 wt %, and the balance substantially alumina, wherein the sinter has dielectric loss of not more than 4×10−4 particularly 2.5×10−4 or less in the frequency range of 10 MHz to 5 GHz. Such a member may be formed of a ceramic sinter including an aluminum phase having mean crystal grain size in a range of 2 to 10 &mgr;m and a yttrium-aluminum-garnet phase having a mean crystal grain size in a range of 1.5 to 5 &mgr;m, wherein the ratio of the mean crystal grain size of the alumina phase to that of the yttrium-aluminum-garnet phase is larger than 1 and smaller than 7.

Abstract: A plasma display panel of a surface discharge type is disclosed, which can positively generate the discharge for display while suppressing the power consumption even when the number of the electrodes is increased for attaining the high definition. A plurality of display electrode pairs are arranged in proximity with each other inside of a pair of substrates opposed to each other with a discharge gap formed therebetween. Each display electrode includes a main pattern extending in one direction, independent discharge patterns each formed for each luminous area corresponding to a display cell, and a plurality of auxiliary patterns for electrically connecting the main pattern and the discharge patterns to each other. The auxiliary patterns are higher in conductivity than the discharge patterns.

Abstract: The present invention is to provide ceramic members for being used as members constituting a processing chamber for etching or cleaning semiconductor substrates or wafers by halogen plasma. A ceramic member includes at least 10% by volume of a compound of yttrium-aluminum-garnet (YAG) phase and not more than 90% by volume of at least an oxide phase selected from aluminum oxide, yttrium oxide and aluminum nitride. Particularly, the ceramic member contains yttrium within a range of 35 to 80 mole % in terms of yttrium oxide Y2O3 and aluminum within a range of 20 to 65 mole % in terms of aluminum oxide Al2O3 to form a mixture of YAG phase with yttria phase, producing ceramic material having high corrosion resistance to halogenous gas and its plasma. Such ceramic material may be well applicable to members to be exposed by the halogen plasma, for example, a chamber wall, a wafer stage, a clamp ring, a shower head, which are used in systems for etching and cleaning semiconductor wafers.

Abstract: An electrically erasable and programmable read only memory includes a memory cell array having a plurality of memory cells coupled to bit lines and word lines. Each of the memory cells includes a select transistor controlled by one of the word lines, a memory transistor of the enhancement type coupled to one of the bit lines through the select transistor and having a control gate, and a drive transistor having a gate coupled to the one of the word lines and applying a control gate voltage supplied through a program line to the control gate of the memory transistor. Further, the electrically erasable and programmable read only memory includes a select device for selecting at least one of the bit lines and one of the word lines on the basis of an address supplied from an external device, and a sense amplifier for outputting data stored in the memory cell array.