Abstract: A method for cleaning etch residues that may include treating an etched surface with an aqueous lanthanoid solution, wherein the aqueous lanthanoid solution removes an etch residue that includes a majority of hydrocarbons and at least one element selected from the group consisting of carbon, oxygen, fluorine, nitrogen and silicon. In one example, the aqueous solution may be cerium ammonium nitrate (Ce(NH4)(NO3)),(CAN).

Abstract: A lens barrel (3) holding an imaging lens (2) is inserted into a carrier (5) accommodated in an actuator (4), and the carrier (5) is held at a position in an optical axis direction of the imaging lens (2) by the actuator (4). The position of the imaging lens (2) in the optical axis direction and the eccentricity of the imaging lens (2) are adjusted on the basis of imaging information of an image sensor (6), and the lens barrel (3) is fixed to the carrier (5).

Abstract: A silicone oil-treated silica particle according to the present invention includes a silica particle body and silicone oil. The silica particle body has a BET specific surface area of 70 m2/g to 120 m2/g. The silica particle body has been surface-treated with the silicone oil. The amount of free silicone oil liberated from the surface of the silica particle body in the silicone oil accounts for 2.0 mass % to 5.0 mass % with respect to the silica particle body. A surface-treated styrene acrylic resin particle, in which 2 parts by mass of the silicone oil-treated silica particle has been added to 100 parts by mass of a styrene acrylic resin particle having a particle size median of 5 ?m to 8 ?m, has a degree of agglomeration of 18% or less.

Abstract: A TH terminal receives an analog control voltage VTH which indicates a rotational speed. With a first platform, a capacitor and a discharging resistor are connected in parallel between an OSC terminal and the ground. A charging resistor and a first switch are arranged in series between the OSC terminal and a reference voltage line via which a stabilized voltage is supplied. When an oscillator voltage VOSC that occurs at the OSC terminal reaches an upper-side threshold VH, a switching circuit turns off the first switch. When the oscillator voltage VOSC falls to a lower-side threshold value VL, the switching circuit turns on the first switch. The oscillator voltage VOSC is compared with the voltage at the TH terminal, so as to generate a pulse-modulated control pulse S3.

Abstract: A liquid supply device includes a connection body which includes a liquid introduction portion which is capable of connecting to a liquid outlet portion of a liquid container which includes the liquid outlet portion which contains the liquid which is supplied to the liquid ejecting unit which ejects the liquid and is capable of guiding out the liquid, a liquid container support portion which is capable of supporting the liquid container in a state in which the liquid introduction portion is capable of being connected to the liquid outlet portion to be capable of being freely attached and detached, and a connection body holding portion which holds the connection body in a state in which a connection of the liquid introduction portion with the liquid outlet portion is released.

Abstract: A method of manufacturing a camera module that is low profile and that can achieve superior resolving power, a camera module, and an imaging device are provided. A positioning step of positioning an object-side group optical unit (12a) along an optical axis direction with the use of a jig (40) such that the object-side group optical unit (12a) is located so as not to be in contact with an image-plane-side group lens (32a) and a fixing step of fixing the object-side group optical unit (12a) to a lens holder (20) are included.

Abstract: The present invention relates to a sensor device which has high S/N and excellent temperature characteristics. A sensor device has a semiconductor substrate, a first metal wiring layer provided on the semiconductor substrate, a first insulating layer provided on the first metal wiring layer, a compound semiconductor sensor element provided on the first insulating layer, a second metal wiring layer provided on the compound semiconductor sensor element and the first insulating layer, and a second insulating layer provided on the second metal wiring layer. A third insulating layer is provided between the first metal wiring layer and the second metal wiring layer, and the compound semiconductor sensor element is provided in the third insulating layer.

Abstract: A lens barrel (3) holding an imaging lens (2) is inserted into a carrier (5) accommodated in an actuator (4), and the carrier (5) is held at a position in an optical axis direction of the imaging lens (2) by the actuator (4). The position of the imaging lens (2) in the optical axis direction and the eccentricity of the imaging lens (2) are adjusted on the basis of imaging information of an image sensor (6), and the lens barrel (3) is fixed to the carrier (5).

Abstract: A silicone oil-treated silica particle according to the present invention includes a silica particle body and silicone oil. The silica particle body has a BET specific surface area of 70 m2/g to 120 m2/g. The silica particle body has been surface-treated with the silicone oil. The amount of free silicone oil liberated from the surface of the silica particle body in the silicone oil accounts for 2.0 mass % to 5.0 mass % with respect to the silica particle body. A surface-treated styrene acrylic resin particle, in which 2 parts by mass of the silicone oil-treated silica particle has been added to 100 parts by mass of a styrene acrylic resin particle having a particle size median of 5 ?m to 8 ?m, has a degree of agglomeration of 18 % or less.

Abstract: A reduction in resolving power due to the tilt of an imaging element is easily solved.

Abstract: Pretreatment of an etch chamber for performing a silicon etch process and Bosch process can be effected by running a deposition process employing C5HF7, or by running an alternating deposition and etch process employing C5H2F6 and SF6. It has been discovered that the pretreatment of the etch chamber for the silicon etch process can enhance the etch rate of silicon by at least 50% without adverse effect on etch profile during a first each process following the pretreatment, while the etch rate enhancement factor decreases over time. By periodically performing the pretreatment in the etch chamber, the throughput of the etch chamber can be increased without adversely impacting the etch profile of the processed substrates.

Abstract: A silicon nitride cap on a gate stack is removed by etching with a fluorohydrocarbon-containing plasma subsequent to formation of source/drain regions without causing unacceptable damage to the gate stack or source/drain regions. A fluorohydrocarbon-containing polymer protection layer is selectively deposited on the regions that are not to be etched during the removal of the nitride cap. The ability to remove the silicon nitride material using gas chemistry, causing formation of a volatile etch product and protection layer, enables reduction of the ion energy to the etching threshold.

Abstract: A silicon nitride cap on a gate stack is removed by etching with a fluorohydrocarbon-containing plasma subsequent to formation of source/drain regions without causing unacceptable damage to the gate stack or source/drain regions. A fluorohydrocarbon-containing polymer protection layer is selectively deposited on the regions that are not to be etched during the removal of the nitride cap. The ability to remove the silicon nitride material using gas chemistry, causing formation of a volatile etch product and protection layer, enables reduction of the ion energy to the etching threshold.

Abstract: A stack that includes, from bottom to top, a nitrogen-containing dielectric layer, an interconnect level dielectric material layer, and a hard mask layer is formed on a substrate. The hard mask layer and the interconnect level dielectric material layer are patterned by an etch. Employing the patterned hard mask layer as an etch mask, the nitrogen-containing dielectric layer is patterned by a break-through anisotropic etch, which employs a fluorohydrocarbon-containing plasma to break through the nitrogen-containing dielectric layer. Fluorohydrocarbon gases used to generate the fluorohydrocarbon-containing plasma generate a carbon-rich polymer residue, which interact with the nitrogen-containing dielectric layer to form volatile compounds. Plasma energy can be decreased below 100 eV to reduce damage to physically exposed surfaces of the interconnect level dielectric material layer.

Abstract: A silicon nitride cap on a gate stack is removed by etching with a fluorohydrocarbon-containing plasma subsequent to formation of source/drain regions without causing unacceptable damage to the gate stack or source/drain regions. A fluorohydrocarbon-containing polymer protection layer is selectively deposited on the regions that are not to be etched during the removal of the nitride cap. The ability to remove the silicon nitride material using gas chemistry, causing formation of a volatile etch product and protection layer, enables reduction of the ion energy to the etching threshold.

Abstract: To reduce scratches during polishing while ensuring an appropriately high polishing rate, provided are a silica for CMP satisfying the following (A) to (C), an aqueous dispersion using a silica for CMP, and a method of producing a silica for CMP: (A) a BET specific surface area of 40 m2/g or more and 180 m2/g or less; (B) a particle density measured by a He-gas pycnometer method of 2.24 g/cm3 or more; and (C) a coefficient of variation in primary particle diameter calculated by TEM/image analysis of 0.40 or less.

Abstract: A non-transitory storage medium encoded with a computer readable information processing program executed by a computer with a near field wireless communication function is provided. The information processing program causes the computer to perform the steps of exchanging data with any proximate information storage medium and proceeding with game processing in accordance with a time difference between predetermined timing and one of timing at which exchange of data with the information storage medium is enabled and timing at which exchange of data with the information storage medium is disabled.

Abstract: A method for cleaning etch residues that may include treating an etched surface with an aqueous lanthanoid solution, wherein the aqueous lanthanoid solution removes an etch residue that includes a majority of hydrocarbons and at least one element selected from the group consisting of carbon, oxygen, fluorine, nitrogen and silicon. In one example, the aqueous solution may be cerium ammonium nitrate (Ce(NH4)(NO3)),(CAN).

Abstract: A method for cleaning etch residues that may include treating an etched surface with an aqueous lanthanoid solution, wherein the aqueous lanthanoid solution removes an etch residue that includes a majority of hydrocarbons and at least one element selected from the group consisting of carbon, oxygen, fluorine, nitrogen and silicon. In one example, the aqueous solution may be cerium ammonium nitrate (Ce(NH4)(NO3)),(CAN).

Abstract: The organic electroluminescence element of the present invention includes: a first substrate; a second substrate facing the first substrate; an element member between the first and second substrates; first and second extension electrodes on first and second inner surfaces of the first and second substrates facing the element member; and an insulating member having an electrically insulating property. The element member includes: a functional layer including a light-emitting layer and having first and second surfaces in a thickness direction; and first and second electrode layers on the respective first and second surfaces of the functional layer. The element member is between the first and second extension electrodes such that parts of the first and second electrode layers are in contact with the first and second extension electrodes respectively. The insulating member is between the first and second inner surfaces of the respective first and second substrates.