Abstract: On a piezoelectric substrate 23, there are provided surface acoustic wave devices F1 and F2 in which predetermined circuit patterns are formed, and a package substrate 11 comprising side vias 16 formed in a caved manner in the thickness direction on side surfaces on which the surface acoustic wave devices are mounted. When the side vias 16 are each assumed to have the opening width ? and the maximum depth D, a size satisfying ?/2<D is assumed. Thereby, it is possible to prevent protrusion of a soldering fillet applied on the side via.

Abstract: A SAW device includes one or more surface acoustic wave element which comprises an interdigital transducer on a single crystal piezo-electric substrate and is flip-chip mounted on a base substrate through metal bumps. The IDT transducer is formed of a laminate film including an underlying layer made of titanium nitride or titanium and an aluminum layer. The underlying layer and Al layer are laminated sequentially on the single crystal piezo-electric substrate. The single crystal piezo-electric substrate is a 46°- or more rotation Y-cut X-propagation lithium tantalate substrate. The single crystal piezo-electric substrate may be a 64°-rotation Y-cut X-propagation lithium niobate substrate.

Abstract: On a piezoelectric substrate 23, there are provided surface acoustic wave devices F1 and F2 in which predetermined circuit patterns are formed, and a package substrate 11 comprising side vias 16 formed in a caved manner in the thickness direction on side surfaces on which the surface acoustic wave devices are mounted. When the side vias 16 are each assumed to have the opening width ? and the maximum depth D, a size satisfying ?/2<D is assumed. Thereby, it is possible to prevent protrusion of a soldering fillet applied on the side via.

Abstract: A software application that filters specific messages from an e-mail server is disclosed. A user specifies filtering criteria within the application, which then detects the arrival of an e-mail fulfilling the specified criteria, and notifies the user accordingly. The notification can consist of blinking an icon on a Set Top Box (STB) TV screen, making an audible sound, or activating a pager. The subject of the filter criteria can be an Instant Message or telephone call using Caller ID, instead of an e-mail message.

Abstract: On a piezoelectric substrate 23, there are provided surface acoustic wave devices F1 and F2 in which predetermined circuit patterns are formed, and a package substrate 11 comprising side vias 16 formed in a caved manner in the thickness direction on side surfaces on which the surface acoustic wave devices are mounted. When the side vias 16 are each assumed to have the opening width ? and the maximum depth D, a size satisfying ?/2<D is assumed. Thereby, it is possible to prevent protrusion of a soldering fillet applied on the side via.

Abstract: A basic portion layer 21 of a substrate electrode 12a connected to a projecting electrode 13 electrically and mechanically on a substrate member of ceramics. The substrate member on which the basic portion layer 21 is formed is subjected to sintering. A surface of the basic portion layer 21 in the sintered substrate member is polished. On the polished basic portion layer 21, the plating layers 22, 23are formed, so that surface roughness of the substrate electrode 12a may be, for example, not larger than 0.1 ?mRMS. Accordingly, junction strength of an integrated circuit element mounted on a packaging substrate by a flip-chip method can be improved.

Abstract: A method of producing a wear-resistant protective film for a thermal head comprises depositing a wear-resistant protective film by sputtering on a thermal head which includes a substrate, and a heat-developing layer and a pair of electrodes formed on either the substrate or a heat-regenerative layer formed thereon. A layer of the wear resistant protective film is formed under a RF larger bias and another layer without a bias or with a smaller bias. Good step coverage is obtained by the RF sputter layer of the wear-resistant and the protective film prevents the intrusion of water that can cause cracking, and the layer formed under no or smaller bias reduces internal stresses and inhibits the development of cracks due to internal stresses as well as the cracking by RF sputtering.

Abstract: In a surface acoustic wave element according to an embodiment of this invention, raised electrodes 20 formed on thin film electrodes 18 are provided with throughholes 31. Additionally, bumps 26 arranged on the raised electrodes 20 reach the thin film electrode 18 by going through an oxide film 18a of the thin film electrodes 18 after part of the bumps enters the throughholes 31 of the raised electrodes 20. By doing this, conduction is achieved between the thin film electrodes 18 and the bumps 26 formed on a piezoelectric monocrystal substrate 28. Thus, a solid oxide film 18a is formed on the surface of the thin film electrodes 18 formed from monocrystal aluminum, but part of the bumps 26 which enters the throughholes 31 of the raised electrodes 20 goes through this oxide film 18a, so conduction between the thin film electrode 18 and the bump 26 is achieved with higher accuracy.

Abstract: A basic portion layer 21 of a substrate electrode 12a connected to a projecting electrode 13 electrically and mechanically on a substrate member of ceramics. The substrate member on which the basic portion layer 21 is formed is subjected to sintering. A surface of the basic portion layer 21 in the sintered substrate member is polished. On the polished basic portion layer 21, the plating layers 22, 23. are formed, so that surface roughness of the substrate electrode 12a may be, for example, not larger than 0.1 ?mRMS Accordingly, junction strength of an integrated circuit element mounted on a packaging substrate by a flip-chip method can be improved.

Abstract: A basic portion layer 21 of a substrate electrode 12a connected to a projecting electrode 13 electrically and mechanically on a substrate member of ceramics. The substrate member on which the basic portion layer 21 is formed is subjected to sintering. A surface of the basic portion layer 21 in the sintered substrate member is polished. On the polished basic portion layer 21, the plating layers 22, 23 are formed, so that surface roughness of the substrate electrode 12a may be, for example, not larger than 0.1 ?mRMS. Accordingly, junction strength of an integrated circuit element mounted on a packaging substrate by a flip-chip method can be improved.

Abstract: An SAW element 11 comprises a first wiring section 20 formed between an input terminal 18 and an output terminal 19, a plurality of first SAW resonators 15 which are located in serial to the first wiring section 20, a plurality of second SAW resonators 16 which are located in serial to the first wiring section 20 at the side of the input terminal 18 or at the side of the output terminal 19 with respect to the first SAW resonators 15, a plurality of second wiring section 22 which are formed between an intermediate point of the second SAW resonators 16 each other in the first wiring section 20 and a reference voltage electrode 21, and a plurality of third SAW resonators 17 which are located in the second wiring section 22, respectively, and which have anti-resonant frequencies corresponding with resonant frequencies of the second SAW resonators 16.

Abstract: In a SAW device comprising a piezoelectric single crystal substrate and electrodes on a surface thereof, the substrate is obtained by slicing a LiTaO3 or LiNbO3 material such that a plane containing axis X and perpendicular to a new axis Y obtained by rotating axis Y about axis X by an angle of 33°±9° becomes the substrate surface, and each electrode is a layered film including a titanium nitride layer and an aluminum layer thereon. The aluminum layer containing no grain boundaries ensures high. efficiency, long life SAW devices experiencing no increase of electrical resistance.

Abstract: In a SAW device comprising a piezoelectric single crystal substrate and electrodes on a surface thereof, the substrate is obtained by slicing a LiTaO3 or LiNbO3 material such that a plane containing axis X and perpendicular to a new axis Y obtained by rotating axis Y about axis X by an angle of 33°±9° becomes the substrate surface, and each electrode is a layered film including a titanium nitride layer and an aluminum layer thereon. The aluminum layer containing no grain boundaries ensures high efficiency, long life SAW devices experiencing no increase of electrical resistance.

Abstract: In a surface acoustic wave element according to an embodiment of this invention, raised electrodes 20 formed on thin film electrodes 18 are provided with throughholes 31. Additionally, bumps 26 arranged on the raised electrodes 20 reach the thin film electrode 18 by going through an oxide film 18a of the thin film electrodes 18 after part of the bumps enters the throughholes 31 of the raised electrodes 20. By doing this, conduction is achieved between the thin film electrodes 18 and the bumps 26 formed on a piezoelectric monocrystal substrate 28. Thus, a solid oxide film 18a is formed on the surface of the thin film electrodes 18 formed from monocrystal aluminum, but part of the bumps 26 which enters the throughholes 31 of the raised electrodes 20 goes through this oxide film 18a, so conduction between the thin film electrode 18 and the bump 26 is achieved with higher accuracy.

Abstract: A surface acoustic wave element includes a thin film electrode composed of monocrystal aluminum disposed on a piezoelectric substrate. At least one metal of Cu, Ta, W, and Ti is segregated in the thin film electrode composed of monocrystal aluminum. In this surface acoustic wave element, segregation of Cu or the like occurs in the thin film electrode. Such segregation is effective to reduce the occurrence of cracks on the piezoelectric substrate during ultrasonic wave connection for flip chip mounting. That is, because the occurrence of cracks on the piezoelectric substrate is reduced, tolerance against the ultrasonic vibration is advantageously improved in the surface acoustic wave element.

Abstract: A basic portion layer 21 of a substrate electrode 12a connected to a projecting electrode 13 electrically and mechanically on a substrate member of ceramics. The substrate member on which the basic portion layer 21 is formed is subjected to sintering. A surface of the basic portion layer 21 in the sintered substrate member is polished. On the polished basic portion layer 21, the plating layers 22, 23 are formed, so that surface roughness of the substrate electrode 12a may be, for example, not larger than 0.1 &mgr;mRMS. Accordingly, junction strength of an integrated circuit element mounted on a packaging substrate by a flip-chip method can be improved.

Abstract: An SAW element 11 comprises a first wiring section 20 formed between an input terminal 18 and an output terminal 19, a plurality of first SAW resonators 15 which are located in serial to the first wiring section 20, a plurality of second SAW resonators 16 which are located in serial to the first wiring section 20 at the side of the input terminal 18 or at the side of the output terminal 19 with respect to the first SAW resonators 15, a plurality of second wiring section 22 which are formed between an intermediate point of the second SAW resonators 16 each other in the first wiring section 20 and a reference voltage electrode 21, and a plurality of third SAW resonators 17 which are located in the second wiring section 22, respectively, and which have anti-resonant frequencies corresponding with resonant frequencies of the second SAW resonators 16.

Abstract: A basic portion layer 21 of a substrate electrode 12a connected to a projecting electrode 13 electrically and mechanically on a substrate member of ceramics. The substrate member on which the basic portion layer 21 is formed is subjected to sintering. A surface of the basic portion layer 21 in the sintered substrate member is polished. On the polished basic portion layer 21, the plating layers 22, 23, are formed, so that surface roughness of the substrate electrode 12a may be, for example, not larger than 0.1 &mgr;mRMS. Accordingly, junction strength of an integrated circuit element mounted on a packaging substrate by a flip-chip method can be improved.

Abstract: A surface acoustic wave device includes a piezoelectric substrate having Al or Al alloy electrodes formed on a surface of the substrate, a metal oxide film provided on the substrate and the electrodes. The metal oxide film is formed by a process including depositing a metal thin film having a thickness sufficiently thin so that the deposited metal thin film is discontinuous including voids, and oxidizing the discontinuous metal thin film, and the metal oxide film includes a continuous portion without voids covering the electrodes.

Abstract: An intermediate transfer element has at least one or more elastic layers and a toner releasing layer provided on the surface of the elastic layer and has a surface shape including minute projections up to 60 &mgr;m and at least 20 &mgr;m high. By providing the intermediate transfer element with such projections, easy separation with respect to a poorly separable recording medium, such as thin paper is achieved, and an image free from image defects, such as white speckles.