Abstract: A compound semiconductor device includes a compound semiconductor layer in which a two-dimensional carrier gas layer is formed, the compound semiconductor layer including a carrier travel layer and a carrier supply layer; first and second main electrodes, which are arranged apart from each other on the compound semiconductor layer, and are ohmically connected to the two-dimensional carrier gas layer; a metal oxide semiconductor film arranged on the compound semiconductor layer between the first main electrode and the second main electrode; and a control electrode arranged on the metal oxide semiconductor film, the control electrode including a titanium film that contacts the metal oxide semiconductor film or a titanium-containing compound film that contacts the metal oxide semiconductor film.

Abstract: A silicon carbide substrate has a first main surface and a second main surface opposite to the first main surface. A first conductive type impurity is diffused in the silicon carbide substrate. A method of producing a semiconductor device includes preparing the silicon carbide substrate forming a first conductive type impurity diffused region on the first main surface therein; preparing a silicon substrate having a third main surface and a fourth main surface opposite to the third main surface, said silicon substrate including a thermal oxidation film formed on the third main surface; and attaching the third main surface to the first main surface via the thermal oxidation film.

Abstract: A silicon carbide substrate has a first main surface and a second main surface opposite to the first main surface. A first conductive type impurity is diffused in the silicon carbide substrate. A method of producing a semiconductor device includes preparing the silicon carbide substrate forming a first conductive type impurity diffused region on the first main surface therein; preparing a silicon substrate having a third main surface and a fourth main surface opposite to the third main surface, said silicon substrate including a thermal oxidation film formed on the third main surface; and attaching the third main surface to the first main surface via the thermal oxidation film.