Patents by Inventor Masahiro Ninomiya

Masahiro Ninomiya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor substrate and semiconductor device fabrication method
    Patent number: 7301169
    Abstract: The semiconductor substrate comprises a first monitor part 14a formed in a first region near a center of a semiconductor wafer 10, which includes a first element having a first electrode 24 formed over the semiconductor wafer 10 with a first insulation film 22 formed therebetween, and a first electrode pad 32 electrically connected to the first electrode 24; and a second monitor part 14b formed in a second region different from the first region, which includes a second element having a second electrode 24 formed on the semiconductor wafer 10 with a second insulation film 22 formed therebetween, and a second electrode pad 32 electrically connected to the second electrode 24. When electric breakdown has taken place in both the first monitor part 14a and the second monitor part 14b, it can be judged that too large static electricity was generated upon the release of the surface protection film 39.
    Type: Grant
    Filed: November 24, 2004
    Date of Patent: November 27, 2007
    Assignee: Fujitsu Limited
    Inventors: Sachie Tone, Hiroshi Ohta, Masahiro Ninomiya
  • Semiconductor substrate and semiconductor device fabrication method
    Publication number: 20060022196
    Abstract: The semiconductor substrate comprises a first monitor part 14a formed in a first region near a center of a semiconductor wafer 10, which includes a first element having a first electrode 24 formed over the semiconductor wafer 10 with a first insulation film 22 formed therebetween, and a first electrode pad 32 electrically connected to the first electrode 24; and a second monitor part 14b formed in a second region different from the first region, which includes a second element having a second electrode 24 formed on the semiconductor wafer 10 with a second insulation film 22 formed therebetween, and a second electrode pad 32 electrically connected to the second electrode 24. When electric breakdown has taken place in both the first monitor part 14a and the second monitor part 14b, it can be judged that too large static electricity was generated upon the release of the surface protection film 39.
    Type: Application
    Filed: November 24, 2004
    Publication date: February 2, 2006
    Applicant: FUJITSU LIMITED
    Inventors: Sachie Tone, Hiroshi Ohta, Masahiro Ninomiya