Abstract: The present invention provides a method for producing high-purity titanium from titanium sponge obtained by the Kroll process in which a core of the cylindrical lump of titanium sponge obtained with a weight less than 20-30% of that of the cylindrical lump is separated by cutting off from the lump a bottom portion, a top portion and a peripheral portion, and the core is cut by a press into grains of specific size, which are melted into ingot or refined by reaction with iodine. The high-purity titanium thus produced contains less than 300 ppm of oxygen and less than 10 ppm each of iron, nickel, chromium, aluminum and silicon, the balance being titanium and inevitable impurities; or less than 200 ppm of oxygen and less than 1 ppm each of iron, nickel, chromium, aluminum and silicon, the balance being titanium and inevitable impurities. Thus the invention provides titanium materials of very high purity suitable for thin film deposition as wiring of LSIs from titanium sponge obtained by the Kroll process.