Abstract: An embodiment provides a light source unit including an excitation light source for emitting excitation light, and a luminescent material wheel where a first area and a second area are disposed circumferentially, the first area having a first luminescent material layer for converting the excitation light into light of a first wavelength range, the second area having a second luminescent material layer for converting the excitation light into light of a second wavelength range adjoining the first wavelength range, wherein a reflecting portion to reflect the light of the first wavelength range is provided on an opposite side of the first luminescent material layer to a surface where the excitation light is shone, and wherein a transmitting portion for transmitting the light of the second wavelength range is provided on an opposite side of the second luminescent material layer to a surface where the excitation light is shone.

Abstract: A solid-state imaging apparatus, comprising a first semiconductor region of a first conductivity type provided on a substrate by an epitaxial growth method, a second semiconductor region of the first conductivity type provided on the first semiconductor region, and a third semiconductor region of a second conductivity type provided in the second semiconductor region so as to form a pn junction with the second semiconductor region, wherein the first semiconductor region is formed such that an impurity concentration decreases from a side of the substrate to a side of the third semiconductor region, and an impurity concentration distribution in the second semiconductor region is formed by an ion implantation method.

Abstract: A light source unit includes a first light source for emitting light in a first wavelength range, a luminescent wheel including a second light source for emitting light in a second wavelength range and a third light source for emitting light in a third wavelength range whose wavelength differs from that of the light in the second wavelength range, which are disposed circumferentially end to end in an adjacent fashion, a fourth light source for emitting light in a fourth wavelength range similar in color system to the light in the second or third wavelength range, and a control unit for controlling the fourth light source and the luminescent wheel to illuminate the fourth light source during a first color mixing period when a boundary between the second and third light sources is situated on an optical path of the light in the first wavelength range.

Abstract: A light source unit includes a first light source for emitting light in a first wavelength range, a luminescent wheel including a second light source for emitting light in a second wavelength range and a third light source for emitting light in a third wavelength range whose wavelength differs from that of the light in the second wavelength range, which are disposed circumferentially end to end in an adjacent fashion, a fourth light source for emitting light in a fourth wavelength range similar in color system to the light in the second or third wavelength range, and a control unit for controlling the fourth light source and the luminescent wheel to illuminate the fourth light source during a first color mixing period when a boundary between the second and third light sources is situated on an optical path of the light in the first wavelength range.

Abstract: An embodiment provides a light source unit including an excitation light source for emitting excitation light, and a luminescent material wheel where a first area and a second area are disposed circumferentially, the first area having a first luminescent material layer for converting the excitation light into light of a first wavelength range, the second area having a second luminescent material layer for converting the excitation light into light of a second wavelength range adjoining the first wavelength range, wherein a reflecting portion to reflect the light of the first wavelength range is provided on an opposite side of the first luminescent material layer to a surface where the excitation light is shone, and wherein a transmitting portion for transmitting the light of the second wavelength range is provided on an opposite side of the second luminescent material layer to a surface where the excitation light is shone.

Abstract: A light source unit has a first light source for emitting light in a first wavelength range, a second light source for emitting light in a second wavelength range of the same color system as the light in the first wavelength range and having a different wavelength, a third light source including light emitting elements for emitting light in a third wavelength range different from the light in the first wavelength range and in the second wavelength range, a fourth light source for emitting light in a fourth wavelength range excited by the light in the third wavelength range as luminous light, and a control unit for controlling the illumination of the first, second, third and fourth light sources, and the control unit controls the number of light emitting elements of the third light source to be illuminated according to illuminated states of the first and second light sources.

Abstract: A solid-state imaging apparatus, comprising a first semiconductor region of a first conductivity type provided on a substrate by an epitaxial growth method, a second semiconductor region of the first conductivity type provided on the first semiconductor region, and a third semiconductor region of a second conductivity type provided in the second semiconductor region so as to form a pn junction with the second semiconductor region, wherein the first semiconductor region is formed such that an impurity concentration decreases from a side of the substrate to a side of the third semiconductor region, and an impurity concentration distribution in the second semiconductor region is formed by an ion implantation method.

Abstract: Stiffening beads (55A, 55B) are formed in turned portions in a region of a fillet bead (53) formed in a single stroke manner. At this time, it is set in such a manner that welding start positions of the stiffening beads (55A, 55B) are in a region near the fillet bead and do not exist independently without mixing with other weld beads.

Abstract: A solid-state imaging apparatus, comprising a first semiconductor region of a first conductivity type provided on a substrate by an epitaxial growth method, a second semiconductor region of the first conductivity type provided on the first semiconductor region, and a third semiconductor region of a second conductivity type provided in the second semiconductor region so as to form a pn junction with the second semiconductor region, wherein the first semiconductor region is formed such that an impurity concentration decreases from a side of the substrate to a side of the third semiconductor region, and an impurity concentration distribution in the second semiconductor region is formed by an ion implantation method.

Abstract: A light source unit includes a first light source for emitting light in a first wavelength range, a luminescent wheel including a second light source for emitting light in a second wavelength range and a third light source for emitting light in a third wavelength range whose wavelength differs from that of the light in the second wavelength range, which are disposed circumferentially end to end in an adjacent fashion, a fourth light source for emitting light in a fourth wavelength range similar in color system to the light in the second or third wavelength range, and a control unit for controlling the fourth light source and the luminescent wheel to illuminate the fourth light source during a first color mixing period when a boundary between the second and third light sources is situated on an optical path of the light in the first wavelength range.

Abstract: Alight source unit has a first light source for emitting light in a first wavelength range, a second light source for emitting light in a second wavelength range of the same color system as the light in the first wavelength range and having a different wavelength, a third light source including light emitting elements for emitting light in a third wavelength range different from the light in the first wavelength range and in the second wavelength range, a fourth light source for emitting light in a fourth wavelength range excited by the light in the third wavelength range as luminous light, and a control unit for controlling the illumination of the first, second, third and fourth light sources, and the control unit controls the number of light emitting elements of the third light source to be illuminated according to illuminated states of the first and second light sources.

Abstract: According to the present invention, a pedestrian is detected from an imaged image and a partial image including the pedestrian is extracted, shape information of the pedestrian acquired from the extracted partial image is accumulated and the shape information of a predetermined time before and the current shape information are compared using the accumulated shape information to detect change in the movement of the pedestrian, discontinuous movement estimating information indicating a discontinuous movement of the pedestrian that occurs following the change in the movement of the pedestrian is acquired from a storage means at the time the change in the movement of the pedestrian is detected, and a behavior of the pedestrian is predicted using the acquired discontinuous movement estimating information.

Abstract: Provided is a semiconductor device in which electron mobility is improved by applying sufficiently large tensile stress in a predetermined direction without occurrence of cracks in a nitride semiconductor. The semiconductor device includes: substrate (101), electron transit layer (103) that is disposed on substrate (101) and is formed by GaN; and electron supply layer (104) that is disposed on electron transit layer (103) and is formed by AlGaN. A coefficient of thermal expansion of substrate (101) is different between a first direction in a main surface of substrate (101) and a second direction that is perpendicular to the first direction in the main surface, and tensile stress occurs in electron transit layer (103).

Abstract: A projector includes alight source unit including a light source, a luminescent wheel having light source segments receiving light from the light source to emit different wavelength ranges of light, a color wheel separate from the luminescent wheel that has a first transmission area transmitting light, in visible light, existing in a certain range of wavelengths and a second transmission area transmitting light existing in a range of wavelengths broader than that of the light transmitted through the first transmission area and on to which the different wavelength ranges of light from the luminescent wheel are shone, and a control module controlling not only the luminescent wheel and the color wheel so that they are synchronized with each other but also the light source so that the light emitted from the light source is sequentially shone on to the light source segments.

Abstract: A solid-state imaging apparatus, comprising a first semiconductor region of a first conductivity type provided on a substrate by an epitaxial growth method, a second semiconductor region of the first conductivity type provided on the first semiconductor region, and a third semiconductor region of a second conductivity type provided in the second semiconductor region so as to form a pn junction with the second semiconductor region, wherein the first semiconductor region is formed such that an impurity concentration decreases from a side of the substrate to a side of the third semiconductor region, and an impurity concentration distribution in the second semiconductor region is formed by an ion implantation method.

Abstract: This welded structure member includes a base metal member including a first surface and a second surface; a joined metal member including an abutting surface of which an end surface abuts onto the first surface; a weld bead which is formed on the first surface; and a weld overlay section which is formed on the second surface of the base metal member, in which the weld bead includes a weld bead end section in a position which is separated to the front of the abutting end section.

Abstract: A solid-state imaging apparatus, comprising a first semiconductor region of a first conductivity type provided on a substrate by an epitaxial growth method, a second semiconductor region of the first conductivity type provided on the first semiconductor region, and a third semiconductor region of a second conductivity type provided in the second semiconductor region so as to form a pn junction with the second semiconductor region, wherein the first semiconductor region is formed such that an impurity concentration decreases from a side of the substrate to a side of the third semiconductor region, and an impurity concentration distribution in the second semiconductor region is formed by an ion implantation method.

Abstract: The objective of the present invention is to provide a method of forming a pressed paper piece by deep drawing a sheet of blank that is primarily made of paper in use of a punch and a die, and a production apparatus for implementing the method, whereby no distinguishable wrinkles are formed in upright portions of the pressed paper piece. The method of producing a pressed paper piece according to the present invention, implemented when deep drawing a sheet-like blank that is primarily made of paper in use of a punch and a die, includes maintaining a predetermined gap between a first blank holder and the die in an outer peripheral region of a process portion of the blank and applying a pressure to a radially inner region thereof via a second blank holder, thereby reducing wrinkling by an effect of integrated functions exerted in both regions of the blank.

Abstract: Provided is a semiconductor device in which electron mobility is improved by applying sufficiently large tensile stress in a predetermined direction without occurrence of cracks in a nitride semiconductor. The semiconductor device includes: substrate (101), electron transit layer (103) that is disposed on substrate (101) and is formed by GaN; and electron supply layer (104) that is disposed on electron transit layer (103) and is formed by AlGaN. A coefficient of thermal expansion of substrate (101) is different between a first direction in a main surface of substrate (101) and a second direction that is perpendicular to the first direction in the main surface, and tensile stress occurs in electron transit layer (103).

Abstract: A neural network learning device includes a learning unit configured to perform a learning process that learns a neural network using a plurality of learning data sets. The learning process includes a data reading process, a synaptic weight correction process, a neuron generation process, and a neuron removal process. The neural network learning device includes an intermediate layer generation unit configured to perform an intermediate layer generation process. The intermediate layer generation process newly generates an additional intermediate layer including at least one neuron as an intermediate layer of the neural network when a loss function is greater than a predetermined second threshold value after the learning process is performed. When the additional intermediate layer is newly generated by the intermediate layer generation process, the learning unit performs the learning process again, using the neural network in which the additional intermediate layer has been generated.