Patents by Inventor Masahiro Ousugi

Masahiro Ousugi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9230574
    Abstract: According to one embodiment, a CPP structure magnetoresistive head includes a magnetoresistive sensor film between a lower shield layer and an upper shield layer and a longitudinal biasing layer disposed at each side of the magnetoresistive sensor film via a read track width defining insulator film. In the stripe height direction, the length of the longitudinal biasing layer is longer than the length of a second ferromagnetic layer in which its magnetization rotates in response to the external magnetic field. The second ferromagnetic layer is one of the layers comprising the magnetoresistive sensor film. At a stripe height, the surface of each longitudinal biasing layer has a step to change the thickness thereof across the step so that the air bearing surface section thereof has a larger thickness than any other section. Other structures using a magnetoresistive head and methods of production thereof are described as well.
    Type: Grant
    Filed: December 4, 2009
    Date of Patent: January 5, 2016
    Assignee: HGST Netherlands B.V.
    Inventors: Nobuo Yoshida, Katsuro Watanabe, Masahiro Ousugi, Atsushi Kato
  • Patent number: 7944651
    Abstract: Embodiments of the present invention help to prevent a reduction in the bias magnetic field of a current perpendicular to the plane-type (CPP-type) magnetoresistive effect head, thus suppressing a reduction in read output. According to one embodiment, a CPP-type magnetoresistive effect film is formed on top of a lower magnetic shield. A refill insulation film and a magnetic domain control layer are formed on both sides of an intermediate layer and a free layer of the CPP-type magnetoresistive effect film. A side wall protection film is formed on a side wall of the refill insulation film and on top of the free layer so as to define the height of the magnetic domain control layer. To increase the film thickness of the magnetic domain control layer, the magnetic domain control layer and the refill insulation film are higher than the top surface of the free layer.
    Type: Grant
    Filed: January 4, 2008
    Date of Patent: May 17, 2011
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Masahiro Ousugi, Kouji Okazaki, Satoru Okamoto, Katsuro Watanabe
  • Publication number: 20100142100
    Abstract: According to one embodiment, a CPP structure magnetoresistive head includes a magnetoresistive sensor film between a lower shield layer and an upper shield layer and a longitudinal biasing layer disposed at each side of the magnetoresistive sensor film via a read track width defining insulator film. In the stripe height direction, the length of the longitudinal biasing layer is longer than the length of a second ferromagnetic layer in which its magnetization rotates in response to the external magnetic field. The second ferromagnetic layer is one of the layers comprising the magnetoresistive sensor film. At a stripe height, the surface of each longitudinal biasing layer has a step to change the thickness thereof across the step so that the air bearing surface section thereof has a larger thickness than any other section. Other structures using a magnetoresistive head and methods of production thereof are described as well.
    Type: Application
    Filed: December 4, 2009
    Publication date: June 10, 2010
    Inventors: Nobuo Yoshida, Katsuro Watanabe, Masahiro Ousugi, Atsushi Kato
  • Publication number: 20080239585
    Abstract: Embodiments of the present invention help to prevent a reduction in the bias magnetic field of a current perpendicular to the plane-type (CPP-type) magnetoresistive effect head, thus suppressing a reduction in read output. According to one embodiment, a CPP-type magnetoresistive effect film is formed on top of a lower magnetic shield. A refill insulation film and a magnetic domain control layer are formed on both sides of an intermediate layer and a free layer of the CPP-type magnetoresistive effect film. A side wall protection film is formed on a side wall of the refill insulation film and on top of the free layer so as to define the height of the magnetic domain control layer. To increase the film thickness of the magnetic domain control layer, the magnetic domain control layer and the refill insulation film are higher than the top surface of the free layer.
    Type: Application
    Filed: January 4, 2008
    Publication date: October 2, 2008
    Applicant: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Masahiro Ousugi, Kouji Okazaki, Satoru Okamoto, Katsuro Watababe