Abstract: A semiconductor memory device comprises a memory cell array including memory cells arranged in matrix each having a selective transistor and a variable resistance element having an electric resistance changed from a first state to a second state by applying a first write voltage and from the second state to the first state by applying a second write voltage. A first write current for a first writing operation to change the electric resistance from the first state to the second state is larger than a second write current for a second writing operation to change it from the second state to the first state. A second memory cell number of memory cells subjected to the second writing operation at a time is greater than a first memory cell number of memory cells subjected to the first writing operation at a time. At least the second memory cell number is plural.

Abstract: A semiconductor memory device comprises a memory cell array including memory cells arranged in matrix each having a selective transistor and a variable resistance element having an electric resistance changed from a first state to a second state by applying a first write voltage and from the second state to the first state by applying a second write voltage. A first write current for a first writing operation to change the electric resistance from the first state to the second state is larger than a second write current for a second writing operation to change it from the second state to the first state. A second memory cell number of memory cells subjected to the second writing operation at a time is greater than a first memory cell number of memory cells subjected to the first writing operation at a time. At least the second memory cell number is plural.

Abstract: A method of manufacturing a semiconductor memory device includes the steps of providing a gate insulating film on an active region, depositing a first conductive film on the gate insulating film, processing the first conductive film, the gate insulating film, and the active region to provide an opening of which the bottom is located below the interface between the active region and the gate insulating film and then providing a gate electrode between the openings, depositing a first insulating film which covers the side and bottom surface of the opening, depositing a second insulating film over the first insulating film, shaping the first and second insulating films into a side wall spacer shape by etching to provide charge retention sections beside the gate electrode and providing diffusion areas at opposite sides of the gate electrode beneath the charge retention sections in the active region.

Abstract: A semiconductor memory device comprises writing means for performing a first writing action for shifting an electric resistance of a variable resistance element from a first state to a second state by applying a first voltage between both ends of a memory cell and a gate potential to a gate of a cell access transistor, and a second writing action for shifting the electric resistance from the second state to the first state by applying a second voltage having a polarity opposite to that of the first voltage between both ends of the memory cell and a gate potential to the gate of the cell access transistor, and the polarity and absolute value of the voltage to be applied to both ends of the variable resistance element in the memory cell to be written in the first writing action is different from those in the second writing action.

Abstract: A method of manufacturing a semiconductor memory device includes the steps of providing a gate insulating film on an active region, depositing a first conductive film on the gate insulating film, processing the first conductive film, the gate insulating film, and the active region to provide an opening of which the bottom is located below the interface between the active region and the gate insulating film and then providing a gate electrode between the openings, depositing a first insulating film which covers the side and bottom surface of the opening, depositing a second insulating film over the first insulating film, shaping the first and second insulating films into a side wall spacer shape by etching to provide charge retention sections beside the gate electrode and providing diffusion areas at opposite sides of the gate electrode beneath the charge retention sections in the active region.

Abstract: A semiconductor memory includes: a semiconductor substrate having a protrusion; a gate insulating film formed on an upper surface of the protrusion; a gate electrode formed on the gate insulating film; diffusion regions formed in portions of the substrate on both sides of the protrusion, the diffusion regions being disposed so as to reach edges of side surfaces of the protrusion; a channel region between the diffusion regions, the channel region being located below the gate electrode; and a charge-retaining portion formed on at least one side surface of the protrusion.

Abstract: A processor, including a plurality of arithmetic and logic units for processing data for every bit in a word (W) unit, for processing variable length data, preferred for a communication oriented application, excellent in real time operability and a high speed processability, and capable of flexibly coping with changes in function, addition of functions, etc., provided with a processing mask control unit for dividing the data to be processed and data not to be processed, a carry mask control unit for controlling propagation of carry among the arithmetic and logic units, and a bit switch control unit for switching bits between two sets of data to be processed.

Abstract: An information processing apparatus includes a setting section for setting a sum total of a usable time of at least one specific function under a predetermined condition, and a restricting section for restricting use of the specific function if a used time of the specific function exceeds the sum total of usable time of the specific function.

Abstract: A thermal barrier coating member to be used for such as a member for a gas turbine comprising a metallic member comprising a super alloy mainly composed of at least one of Ni, Co and Fe, an intermediate layer composed of a MCrAlY alloy (M denotes at least one of Ni, Co and Fe) covering this metallic substrate, and a ceramic layer mainly composed of stabilized zirconia formed on the intermediate layer. A ceramic material having a higher melting point than zirconia is compounded in the ceramic layer as a member for suppressing a reaction sintering of the ceramic layer.

Abstract: The present invention provides a carbostyril derivative represented by the following general formula ##STR1## (wherein A, R and W have the same definitions as given above; and the carbon-to-carbon bond between the 3- and 4-positions of the carbostyril skeleton represents a single bond or a double bond.Said carbostyril derivative is useful as a platelets aggregation inhibitory agent.

Abstract: A carbostyril derivative or salt thereof of the formula ##STR1## the carbon-to-carbon bond between the 3- and 4-positions of the carbostyril skeleton being a single bond or a double bond. The carbostyril derivatives are useful as a platelets aggregation inhibitory agent.

Abstract: The invention relates to a polyvinyl acetate resin composition comprising a hydrophilic polyvinyl acetate resin rendered soluble or dispersible in water by partial saponification or introduction of hydrophilic groups (A), a hydroxy fatty acid compound of not less than 6 carbon atoms (B) and a plasticizer (C).

Abstract: This invention relates to a revolution indicator housed inside a casing. The indicator has a plurality of wheels with the numerals 0-9 on the outer periphery of the wheels. The numerals are viewed through a window from the outside of the casing. Each wheel is also encoded magnetically such that each wheels' rotational position can be determined electronically. The rotational position of each wheel can be displayed electronically at a remote location outside the casing.

Abstract: A resin-made detachable fitting to which a tube is connected. The fitting comprises a core of a cylindrical or ring shape forcibly inserted into the tube end to expand it, a fitting body having an inner passage, and a box nut able to mesh with ends of the fitting body and connecting the tube end to the fitting body. The fitting body comprises a cylindrical socket portion axially cylindrically extending from the fitting body ends and having an outer diameter equal to the inner diameter of the core. The socket portion has a sealing surface at its end. The fitting body further comprises a cylindrical securing portion axially extending from the fitting body ends and formed coaxially around the socket portion to form an insertions space. The securing portion has a securing wall facing the socket portion and holding, together with the socket portion, the tube inserted into the insertion space. The box nut comprises a holding surface facing the sealing surface.

Abstract: An automobile body structure includes a canopy of plastic having a pair of thicker portions projecting on an inner surface of the canopy and spaced from each other in the fore-and-aft direction of the automobile body structure, and a rigid support member embedded in each of the thicker portions. The canopy includes a roof, and front and rear windows formed therewith of a unitary, undivided construction, the thicker portions being disposed near upper edges of the front and rear windows. The thicker portions are arch-shaped. The rigid support member comprises a solid rod or a hollow pipe.

Abstract: An elongate packing is sandwiched between two sheet-like mold members in an encircling manner to define a mold cavity therebetween, then a thermosetting plastic material is poured into the mold cavity, and the thermosetting plastic material is heated and set in the mold cavity. The upper and lower mold members are held against deformation transverse thereof so as not to be deformed by the shrinkage of the thermosetting plastic material when the latter is set, and the packing is allowed to move transversely thereof for following the shrinkage of the thermosetting plastic material when the latter is set. In some embodiments, the packing comprises a packing body adapted to be sandwiched between the mold members for preventing the plastic material from flowing out of the mold cavity with a flange joined to the packing body and adapted to be held against peripheral edges of the mold members.