Abstract: An object of the invention is to provide an inspection device which has a function of preventing electric discharge so that an absorbed current is detected more efficiently. In the invention, absorbed current detectors are mounted in a vacuum specimen chamber and capacitance of a signal wire from each probe to corresponding one of the absorbed current detectors is reduced to the order of pF so that even an absorbed current signal with a high frequency of tens of kHz or higher can be detected. Moreover, signal selectors are operated by a signal selection controller so that signal lines of a semiconductor parameters analyzer are electrically connected to the probes brought into contact with a sample. Accordingly, electrical characteristics of the sample can be measured without limitation of signal paths connected to the probes to transmission of an absorbed current. In addition, a resistance for slow leakage of electric charge is provided in each probe stage or a sample stage.

Abstract: An exemplary apparatus for detecting defect is capable of measuring temperature characteristics of a semiconductor sample without restrictions in the movement range of a sample stage and a probe device by a temperature control device. A heater heats a sample stage, and the sample stage is cooled by a refrigerant contained in a refrigerant container through a heat transfer line connected to the sample stage, a first heat receiving portion connected to the heat transfer line, a second heat receiving portion that is detachable from the heat receiving portion, a heat transfer line connected to the heat receiving portion, and a heat transfer rod connected to the heat transfer line, thereby adjusting the temperature of a semiconductor sample held by the sample stage. The heat receiving portions are separated from each other to release the restriction of the sample stage and a probe device such that the sample stage and the, probe device can be moved in a sample chamber.

Abstract: A sample inspection apparatus in which a fault in a semiconductor sample can be measured and analyzed efficiently. A plurality of probes are brought into contact with the sample. The sample is irradiated with an electron beam while a current flowing through the probes is measured. Signals from at least two probes are supplied to an image processing unit so as to form an absorbed electron current image. A difference between images obtained in accordance with a temperature change of the sample is obtained. A faulty point is identified from the difference between the images.

Abstract: The present invention provides an apparatus for detecting defect capable of measuring temperature characteristics of a semiconductor sample without restrictions in the movement range of a sample stage and a probe device by a temperature control device. A heater 55 heats a sample stage, and the sample stage is cooled by a refrigerant contained in a refrigerant container 38 through a heat transfer line 34 connected to the sample stage, a heat receiving portion 36A connected to the heat transfer line 34, a heat receiving portion 36B that is detachable from the heat receiving portion 36A, a heat transfer line 35 connected to the heat receiving portion 36A, and a heat transfer rod 37 connected to the heat transfer line 35, thereby adjusting the temperature of a semiconductor sample 25 held by the sample stage.

Abstract: The present invention provides an inspection apparatus capable of suppressing leak electric current to a specimen and a probe, and thus capable of measuring highly sensitive electrical characteristics, when the specimen is heated by a heater. A specimen heating unit that heats a specimen is configured of: a heater; a grounded metallic shield, which coats the heater as electrically insulated; and an insulation sheet disposed on a side of the metallic shield facing the mounted specimen. Likewise, a probe heating unit is configured of: a heater; a grounded metallic shield, which coats the heater as electrically insulated; and an insulation sheet.