Abstract: To provide a semiconductor integrated device capable of a gate screening test with no need for any additional circuit and without adding any gate screening terminal. The semiconductor integrated device includes a gate drive unit configured to drive the gate of a voltage controlled semiconductor element and a regulator configured to supply a gate drive voltage to the gate drive unit. The regulator includes an external connection terminal capable of receiving a gate screening voltage for the voltage controlled semiconductor element in a gate screening test.

Abstract: The present invention has as its object the provision of an ultraviolet sterilizer that can reduce ultraviolet light in a wavelength region of 230 to 300 nm, which is harmful to the human body, and can output effective light in a wavelength region of 200 to 230 nm with high emission intensity. The ultraviolet sterilizer of the present invention is an ultraviolet sterilizer comprising: an ultraviolet light source; a lamp storage chamber for storing the ultraviolet light source; and alight guiding part for guiding light from the ultraviolet light source, in which a band pass filter for reducing ultraviolet light in a wavelength region harmful to a human body is provided at least one of a position between the light guiding part and the lamp storage chamber and a position of a light outputting leading end of the light guiding part, and an inner surface of the light guiding part is formed from an ultraviolet absorbing member that absorbs the ultraviolet light in the wavelength region harmful to the human body.

Abstract: An aspect of the present invention relates to a wrapping tape for repelling insects, the wrapping tape having a number of male engagement elements on a front surface of a tape, and a number of loop-shaped engagement elements on a rear surface of the tape, wherein the male engagement elements and the loop-shaped engagement elements can be engaged each other, and an insect repellent component is applied at least to the front surface of the tape and the male engagement elements.

Abstract: A heat transfer body 3 is prepared. The heat transfer body 3 forms an inner space 7 for existence of one of a higher-temperature fluid or a lower-temperature fluid. The heat transfer body 3 constitutes a heat exchanger, and is formed of a copper material as a wall surrounding the inner space 7. In the wall, a flow path through which the other of the higher-temperature fluid and the lower-temperature fluid flows is formed. By LMD treatment, an LMD layer is formed directly on an outer circumferential surface 3a of the heat transfer body 3. In the LMD treatment, a metal material is supplied to a supply position on the outer circumferential surface 3a, and the supply position is irradiated with laser light to form an LMD layer 5. An energy density of the laser light is set to melt both the metal material and the outer circumferential surface 3a.

Abstract: A power semiconductor module includes an insulated-gate type power semiconductor device, and a drive circuit controlling a gate voltage applied to the power semiconductor device in accordance with an input signal to drive the power semiconductor device so as to turn ON and OFF. The drive circuit includes a variable resistance circuit changing the gate voltage to the power semiconductor device, and a short-circuit state detecting circuit which maintains the resistance value of the variable resistance circuit to be a predetermined value at the time of a normal operation of the power semiconductor device, and which increases the resistance value of the variable resistance circuit so as to be greater than the predetermined value when a short-circuit state of the power semiconductor device is detected to suppress an oscillation in the power semiconductor device.

Abstract: A semiconductor device, including a main switching element having a gate terminal and an emitter terminal, a sense switching element connected to the main switching element for detecting a current flowing through the main switching element, and a voltage division circuit connected between the gate terminal and the emitter terminal of the main switching element. The voltage division circuit includes a first resistor and a second resistor connected in series. A connection point of the first resistor and the second resistor is connected to the sense switching element, so that a voltage applied to the gate terminal of the main switching element is divided by the voltage division circuit, and a portion of the voltage is applied to the sense switching element.

Abstract: A detection error occurs due to ripple when a current transformer detects zero cross of current. Provided is a detection device for detecting zero cross of output current output from switching circuit including a first switching element and a second switching element connected in series, and the detection device has: an acquisition unit which acquires an observation value that is based on gate current or an observation value based on gate voltage of at least one switching element of the first switching element and the second switching element, during Miller period in which Miller capacitance between a drain and a gate is charged; and a detection unit which detects zero cross of output current flowing between (i) output terminal between first switching element and second switching element and (ii) a load connect to output terminal, based on observation value during Miller period.

Abstract: A piezoelectric blower includes a housing, a vibrating body, and a piezoelectric element. The vibrating body includes a vibration plate, a reinforcing plate, and a restraining plate. The vibrating body forms a columnar blower chamber with the housing while holding the blower chamber therebetween from a thickness direction of the vibration plate. The vibrating body includes an outer peripheral region in contact with an area from the outermost node of pressure vibration in the blower chamber, of nodes of the pressure vibration formed by the bending vibration of the vibrating body, to an outer periphery of the blower chamber, and a center region located in an inner side portion of the outer peripheral region. The restraining plate that restrains the bending vibration of the outer peripheral region is provided in the outer peripheral region.

Abstract: A piezoelectric blower (100) includes a housing (17), a vibrating plate (41), and a piezoelectric element (42). The vibrating plate (41) forms a column-shaped blower chamber (31) together with the housing (17). The vibrating plate (41) and the housing (17) are formed so that the blower chamber (31) has a radius a. The piezoelectric element (42) causes the vibrating plate (41) to concentrically bend and vibrate at a resonance frequency f. A recessed portion (26) is formed in the housing (17) on the side facing the vibrating plate (41). The recessed portion (26) defines a cavity (25), which constitutes the blower chamber (31) and communicates with the vent hole (24). The radius a of the blower chamber (31) and the resonance frequency f of the vibrating plate (41) satisfy a relationship of 0.8×(k0c)/(2?)?af?1.2×(k0c)/(2?).

Abstract: To provide a semiconductor integrated device capable of a gate screening test with no need for any additional circuit and without adding any gate screening terminal. The semiconductor integrated device includes a gate drive unit configured to drive the gate of a voltage controlled semiconductor element and a regulator configured to supply a gate drive voltage to the gate drive unit. The regulator includes an external connection terminal capable of receiving a gate screening voltage for the voltage controlled semiconductor element in a gate screening test.

Abstract: An inverter circuit with a current detection circuitry includes a main bridge circuit connected between the pair of DC input nodes, the main bridge circuit converting the received DC voltage to a primary AC current so as to output the primary AC current through an output terminal to be connected to a load; a supplementary bridge circuit connected in parallel to the main bridge circuit between the pair of DC input nodes, the supplementary bridge circuit having a circuit configuration identical to that of the main bridge circuit with smaller circuit parameters in at least some of constituent circuit elements so as to generate a detection-use AC current that is a prescribed fraction of said AC current outputted by the main bridge circuit. The detection-use AC current is detected by a current detector so as to calculate the amount of the primary AC current.

Abstract: An inverter circuit with a current detection circuitry includes a main bridge circuit connected between the pair of DC input nodes, the main bridge circuit converting the received DC voltage to a primary AC current so as to output the primary AC current through an output terminal to be connected to a load; a supplementary bridge circuit connected in parallel to the main bridge circuit between the pair of DC input nodes, the supplementary bridge circuit having a circuit configuration identical to that of the main bridge circuit with smaller circuit parameters in at least some of constituent circuit elements so as to generate a detection-use AC current that is a prescribed fraction of said AC current outputted by the main bridge circuit. The detection-use AC current is detected by a current detector so as to calculate the amount of the primary AC current.

Abstract: A power semiconductor module includes an insulated-gate type power semiconductor device, and a drive circuit controlling a gate voltage applied to the power semiconductor device in accordance with an input signal to drive the power semiconductor device so as to turn ON and OFF. The drive circuit includes a variable resistance circuit changing the gate voltage to the power semiconductor device, and a short-circuit state detecting circuit which maintains the resistance value of the variable resistance circuit to be a predetermined value at the time of a normal operation of the power semiconductor device, and which increases the resistance value of the variable resistance circuit so as to be greater than the predetermined value when a short-circuit state of the power semiconductor device is detected to suppress an oscillation in the power semiconductor device.

Abstract: An inverter circuit with a current detection circuitry includes a main bridge circuit connected between the pair of DC input nodes, the main bridge circuit converting the received DC voltage to a primary AC current so as to output the primary AC current through an output terminal to be connected to a load; a supplementary bridge circuit connected in parallel to the main bridge circuit between the pair of DC input nodes, the supplementary bridge circuit having a circuit configuration identical to that of the main bridge circuit with smaller circuit parameters in at least some of constituent circuit elements so as to generate a detection-use AC current that is a prescribed fraction of said AC current outputted by the main bridge circuit. The detection-use AC current is detected by a current detector so as to calculate the amount of the primary AC current.

Abstract: With a nonwoven fabric made of fibers mainly composed of amorphous polyetherimide having a melt viscosity at 330° C. from 100 to 3000 Pa·s and an average fiber diameter from 1 to 10 ?m, a nonwoven fabric which is excellent in flame retardancy and can have a small thickness within a range from 5 to 900 ?m with strength being maintained because of its denseness can be provided.

Abstract: A web is formed by integrating continuous fibers produced by melt-spinning, at a temperature of 220° C. or lower, polyvinyl butyral pellets having a butyralization degree of 50 to 90 mass %, an MFR of 0.5 to 45 g/10 min at 150° C. and 2.16 kgf, an acid value of 0.12 mgKOH/g or less, and a 1-butanal content of 5 mass ppm or less, to give a meltblown nonwoven fabric or a spunbonded nonwoven fabric having a 1-butanal content of 10 mass ppm or less. The present invention thus provides a nonwoven fabric formed from PVB continuous fibers whose distinct odor is suppressed, and a manufacturing method therefor.

Abstract: A sense voltage obtained by feeding a sense current of an IGBT into a sense resistor is input to a comparator, and as the reference voltage of the comparator, a sense voltage immediately before the IGBT is turned off is held by a sample and hold circuit for each switching, and is then divided by a voltage dividing circuit and the divided voltage is input to the comparator. The comparator compares the sense voltage with the voltage based on the sense voltage immediately before the IGBT is turned off, and therefore the comparator may accurately detect the falling edge time of the sense voltage and is used for the control for dissolving the imbalance in current with respect to the other IGBTs connected in parallel.

Abstract: An inverter circuit with a current detection circuitry includes a main bridge circuit connected between the pair of DC input nodes, the main bridge circuit converting the received DC voltage to a primary AC current so as to output the primary AC current through an output terminal to be connected to a load; a supplementary bridge circuit connected in parallel to the main bridge circuit between the pair of DC input nodes, the supplementary bridge circuit having a circuit configuration identical to that of the main bridge circuit with smaller circuit parameters in at least some of constituent circuit elements so as to generate a detection-use AC current that is a prescribed fraction of said AC current outputted by the main bridge circuit. The detection-use AC current is detected by a current detector so as to calculate the amount of the primary AC current.

Abstract: A cooperative control method for a plurality of power semiconductor elements connected in parallel. The cooperative control method includes (1) connecting, in a daisy chain configuration, a plurality of current balance control circuits each for driving a corresponding power semiconductor element, and (2) responsive to an input to cause the power semiconductor elements to simultaneously perform switching operations, comparing current information of each power semiconductor element with that of an adjacent power semiconductor element, and delaying, using the current balance control circuits, turn-on time or turn-off time of each power semiconductor element, upon determining that the turn-on time or the turn-off time is earlier than turn-on time or turn-off time obtained from the current information of the adjacent power semiconductor element.

Abstract: A piezoelectric blower includes a housing, a vibrating body, and a piezoelectric element. The vibrating body includes a vibration plate, a reinforcing plate, and a restraining plate. The vibrating body forms a columnar blower chamber with the housing while holding the blower chamber therebetween from a thickness direction of the vibration plate. The vibrating body includes an outer peripheral region in contact with an area from the outermost node of pressure vibration in the blower chamber, of nodes of the pressure vibration formed by the bending vibration of the vibrating body, to an outer periphery of the blower chamber, and a center region located in an inner side portion of the outer peripheral region. The restraining plate that restrains the bending vibration of the outer peripheral region is provided in the outer peripheral region.