Abstract: An apparatus for producing semiconductor devices in which a plurality of treatment chambers such as a load chamber, an etching chamber, a sputtering chamber, an ion implantation chamber, a CVD chamber, an unload chamber, a transfer chamber, a heat-treatment chamber, a rinsing chamber and the like, are connected in series preferably in the form of U for effecting various treatments of semiconductor wafers. Wafer conveyor and transfer means are provided to move a wafer through the treatment chambers in which the wafer is normally sequentially processed and these conveyor and transfer means are reversible so that a wafer which has been moved into a predetermined treatment chamber can be returned to the inlet of the apparatus, whereby the quantity of dust attached to the wafer in each treatment chamber can be easily and positively detected.

Abstract: A device for producing a pleasant or fragrant scent in a room or automobile, for example. The device includes a housing that encloses a container of a fragrant liquid. At least part of the container is made of a substantially transparent material that can also be pierced by a needle or sharp pin. The container includes a reservoir part that is visible through an opening formed in the housing, so that a user may check the amount of liquid remaining in the container. The container further includes a chamber part that may be pierced so that the liquid seeps from it, and a pad or layer of material absorbs the seepage. An adjustable window formed on the housing controls the amount of the liquid that evaporates from the absorbent layer.

Abstract: An ion source suitably used for an etching process among manufacturing processes for e.g. semiconductor devices, comprising a vacuum container, an anode disposed in the vacuum container, a cathode having one or more looped slits formed opposite said anode, and one or more permanent magnets located in a position or positions corresponding to a portion of the cathode surrounded by the looped slit or slits and forming a magnetic field having a direction at substantially right angles to the direction of an electric field formed by applying a voltage between the anode and cathode, a gas which is introduced into the vacuum container through an inlet means formed in the vacuum container being made into gas plasma by means of the electric and magnetic fields at right angles to each other, whereby positive ions in the gas plasma will be taken out through the looped slit or slits.

Abstract: An etching device uses a gas activated by a plasma for etching semiconductor elements. The apparatus includes etching chamber in which semiconductor elements are horizontally held by a supporting plate or conveyer and etched. The etching gas introduced from the upper side of the semiconductor element to the down side thereof through holes formed in the supporting plate or conveyer.

Abstract: Apparatus for the plasma treatment of semiconductors comprises a plasma generating section, means for introducing a gas suitable for plasma treatment into the plasma generating section, high-frequency discharging means for activating the gas contained in said plasma generating section, a treatment section for treating semiconductor substrates with the activated gas, evacuation means for exhausting the gas, and discharge starting means positiioned in a region including the plasma generating section and its neighborhood, whereby a discharge can be started quickly and assuredly.

Abstract: A gas etching apparatus comprising an etching gas-producing chamber; means for introducing into said chamber a mixture of a gas containing fluorine atoms and a gas containing oxygen atoms; means for activating the gas mixture received in the etching gas-producing chamber; an etching chamber provided in a region located apart from the etching gas-producing chamber and free from the electric field produced by the activating means; and an etching gas-conducting pipe means for establishing communication between the etching gas-producing chamber and etching chamber, the improvement being that the etching gas-conducting pipe means is designed to satisfy the following formula:10.sup.-1 Se.ltoreq. C.sub.T .ltoreq. 5.times.10.sup.2 Sewhere:C.sub.t = conductance (l/min) of the etching gas-conducting pipe means;Se= effective exhaust speed (l/min) in the etching chamber.

Abstract: A continuous gas plasma etching apparatus comprising a reaction chamber having an inlet means and an outlet means, an activation portion disposed at a distance from said reaction chamber, a distributor means for uniformly supplying said reaction chamber with an activated gas produced in said activation proton, an exhaust means for exhausting the gas inside said reaction chamber from a plurality of gas outlets, a conveyer means disposed inside said reaction chamber to transfer workpieces from the inlet means side to the outlet means side in said reaction chamber, a feeding chamber disposed on the inlet means side of said reaction chamber to contain the workpieces, a workpiece feeding means for feeding the workpieces in said feeding chamber from said inlet means to said conveyer means, a first shutter means for opening and shutting said inlet means, a receiving chamber disposed on the outlet means side of said reaction chamber to receive the workpieces treated with said activated gas in said reaction chamber, a

Abstract: An etching device uses a gas activated by a plasma for etching a semiconductor element. The apparatus includes object feeding and etching chambers formed on the opposite sides of an airtight flat chamber and a support plate rotatably mounted in the flat chamber to bring the semiconductor element from the feeding chamber to the etching chamber in which the semiconductor element is etched by the vertically flowing activated gas.

Abstract: An activated gas reaction apparatus which comprises an activation chamber; feeding means for conducting feed gas into the activation chamber; microwave power-generating means for activating raw gas received in the activation chamber; and a reaction chamber provided apart from the activation chamber for reaction of activated gas, the activated gas reaction apparatus so constructed as to satisfy the following formula:2.pi.fpl .gtoreq. 4 .times. 10.sup.9wheref = frequency (Hz) of microwavesp = gas pressure (torr) in the activation chamberL = length (cm) of the activation chamber extending in the direction in which the electromagnetic field provided by the microwave source is applied.