Abstract: In a multilayer filter, first and second resonant circuits are arranged in a direction crossing a stacking direction of a plurality of dielectric layers. An input/output portion includes an input/output port group including an unbalanced port and a pair of balanced ports or an input/output port group including two pairs of balanced ports. The second resonant circuit includes an inductor conductor, a first capacitor conductor, and a second capacitor conductor. The inductor conductor includes first and second ends. The first capacitor conductor is connected to the first end. The second capacitor conductor is connected to the second end. The second dielectric layer has a dielectric constant lower than that of the first dielectric layer. The first and second capacitor conductors are provided in the first dielectric layer. At least a part of the inductor conductor is provided in the second dielectric layer.

Abstract: An optical film that even in the event of aging (storage) of optical film formed into thin film and large width in the form of lengthy roll, is free from the danger of sticking failure and protrusion failure attributed to uplift of the film due to local film friction; a process for producing such an optical film; and a polarization plate utilizing the optical film.

Abstract: This invention provides an optical film having a reduced thickness and an increased width, which is free from bleedout with the elapse of time (during storage) in a continuous wound state, a method for manufacturing an optical film, and a polarizing plate using the optical film. The optical film is a plasticizer-containing optical film having an overall width of 1500 mm to 4000 mm produced by a solution casting method. The amount of the plasticizer present in the center portion in the surface side of the optical film is determined as value A by TOF-SIMS. The amount of the plasticizer present in the center portion in the back side is determined as value B by the TOF-SIMS. Value X is determined by formula 1 based on the values A and B. The amount of the plasticizer present in the end portion in the surface side of the optical film is determined as value A? by TOF-SIMS, and the amount of the plasticizer present in the end portion of the back side is determined as value B? by the TOF-SIMS.

Abstract: This invention provides an optical film having a reduced thickness and an increased width, which is free from bleedout with the elapse of time (during storage) in a continuous wound state, a method for manufacturing an optical film, and a polarizing plate using the optical film. The optical film is a plasticizer-containing optical film having an overall width of 1500 mm to 4000 mm produced by a solution casting method. The amount of the plasticizer present in the center portion in the surface side of the optical film is determined as value A by TOF-SIMS. The amount of the plasticizer present in the center portion in the back side is determined as value B by the TOF-SIMS. Value X is determined by formula 1 based on the values A and B. The amount of the plasticizer present in the end portion in the surface side of the optical film is determined as value A? by TOF-SIMS, and the amount of the plasticizer present in the end portion of the back side is determined as value B? by the TOF-SIMS.

Abstract: An optical film that even in the event of aging (storage) of optical film formed into thin film and large width in the form of lengthy roll, is free from the danger of sticking failure and protrusion failure attributed to uplift of the film due to local film friction; a process for producing such an optical film; and a polarization plate utilizing the optical film.

Abstract: When Ti as a barrier metal layer is brought into contact with a diffusion region of boron provided on a surface of a silicon substrate, there is a problem that boron is absorbed by titanium silicide, and contact resistance is increased. Although there is a method of additionally implanting boron whose amount is equal to the amount of boron absorbed by titanium silicide, there has been a problem that when boron is additionally implanted into, for example, a source region in a p-channel type, the additionally added boron is diffused deeply at the diffusion step, and characteristics are deteriorated. According to the invention, after formation of an element region, boron is additionally implanted into the whole surface at a dosage of about 10% of an element region, and is activated in the vicinity of a surface of a silicon substrate by an alloying process of a barrier metal layer.

Abstract: When Ti as a barrier metal layer is brought into contact with a diffusion region of boron provided on a surface of a silicon substrate, there is a problem that boron is absorbed by titanium silicide, and contact resistance is increased. Although there is a method of additionally implanting boron whose amount is equal to the amount of boron absorbed by titanium silicide, there has been a problem that when boron is additionally implanted into, for example, a source region in a p-channel type, the additionally added boron is diffused deeply at the diffusion step, and characteristics are deteriorated. According to the invention, after formation of an element region, boron is additionally implanted into the whole surface at a dosage of about 10% of an element region, and is activated in the vicinity of a surface of a silicon substrate by an alloying process of a barrier metal layer.

Abstract: In a semiconductor memory having a redundancy circuit, when a defective cell is replaced with a redundancy cell, activation of a normal word line is retarded until it is judged whichever of a redundancy word line and a normal word line should be activated. The semiconductor memory has address pre-decoders enabling selection and driving of a normal word line, and a redundancy control circuit for judging whether a redundancy word line should be activated. The address pre-decoders and redundancy control circuit are controlled mutually independently. Irrespective of whether a redundancy word line is used, a normal word line can be controlled earlier. Consequently, the action of the whole semiconductor memory can be speeded up.

Abstract: A semiconductor memory device includes a redundancy word driver to select a redundancy memory cell and a main word driver to select a normal memory cell, wherein it is judged on the basis of an address input whether a redundancy memory cell or a main word is selected and thereby, a time to drive a word line is shortened. In a redundancy judgment circuit, control signals RDC0 to activate redundancy word drivers and a control signal XDC to activate a main word driver are produced, by using dynamic NOR circuits and a dynamic AND circuit that can each set an initial state of an output signal thereof regardless of an input signal, wherein the control signals RDC and XDC in initial states are respectively set to levels at which the redundancy word drivers and main word driver are all inactive.

Abstract: A silver halide photographic light-sensitive material is disclosed. The light-sensitive material comprises a support having on one surface thereof photographic layers including a silver halide emulsion layer, at least one of the photographic layers contains a fluorescent whitening agent, and satisfies the following equation 1:(A/B)<0.03 Equation 1wherein A is an intensity of fluorescent light at the maximum fluorescent wavelength generated from the light-sensitive material before processing when the light-sensitive material is irradiated by exciting light of wavelength of 360 nm and B is an intensity of fluorescent light at the maximum fluorescent wavelength thereof generated from the area not exposed to light of the light-sensitive material after processing when the processed light-sensitive material is irradiated by exciting light of wavelength of 400 nm.

Abstract: A silver halide color photographic light-sensitive material is disclosed. The light-sensitive material comprises a support having thereon a photographic layer includinga silver halide emulsion layer comprising silver halide grains and a binder and a specific pyrazolone type magenta coupler,a non-light-sensitive layer comprising a binder and a compound of Formula II being a liquid at 15.degree. C., and provided adjacently to the surface of said silver halide emulsion layer closer to sais support, anda layer provided at the outermost position of said photographic layer containing a compound represented by Formula II; ##STR1## wherein R.sub.11 and R.sub.12 are each a secondary or tertiary alkyl group and a number of carbon atoms Contained in the groups represented by R.sub.11 and R.sub.12 is 20 or more in total.

Abstract: A silver halide photographic light-sensitive material comprising a support having thereon a yellow coupler-containing silver halide emulsion layer, a magenta coupler-containing silver halide emulsion layer and a cyan coupler-containing silver halide emulsion layer, wherein at least one of said silver halide emulsion layers contains silver halide grains having a silver chloride content of not less than 80 mol %, at least one of the sensitizing dyes represented by the following Formula [I] and at least one of the sensitizing dyes represented by the following Formula [II]; and said cyan coupler-containing silver halide emulsion layer contains at least one of the cyan couplers represented by the following Formula [III]: ##STR1##

Abstract: The present invention provides a process for distillation of styrenes which can be stably operated without loss of energy saving effect, by leading a part or all of low boiling point component vapor from the top to a compressor to use as a heat source for a reboiler and returning the low boiling point components condensed in the reboiler or a mixture of the condensate and a part of the uncondensed vapor to a recycling line of a distillation column.