Abstract: Positive electrode active material particles that inhibit a decrease in capacity due to charge and discharge cycles are provided. A high-capacity secondary battery, a secondary battery with excellent charge and discharge characteristics, or a highly-safe or highly-reliable secondary battery is provided. A novel material, active material particles, and a storage device are provided. The positive electrode active material particle includes a first region and a second region in contact with the outside of the first region. The first region contains lithium, oxygen, and an element M that is one or more elements selected from cobalt, manganese, and nickel. The second region contains the element M, oxygen, magnesium, and fluorine. The atomic ratio of lithium to the element M (Li/M) measured by X-ray photoelectron spectroscopy is 0.5 or more and 0.85 or less. The atomic ratio of magnesium to the element M (Mg/M) is 0.2 or more and 0.5 or less.

Abstract: A positive electrode active material which can improve cycle characteristics of a secondary battery is provided. Two kinds of regions are provided in a superficial portion of a positive electrode active material such as lithium cobaltate which has a layered rock-salt crystal structure. The inner region is a non-stoichiometric compound containing a transition metal such as titanium, and the outer region is a compound of representative elements such as magnesium oxide. The two kinds of regions each have a rock-salt crystal structure. The inner layered rock-salt crystal structure and the two kinds of regions in the superficial portion are topotaxy; thus, a change of the crystal structure of the positive electrode active material generated by charging and discharging can be effectively suppressed.

Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.

Abstract: An image processing device according to an embodiment includes an image acquisition unit, an information acquisition unit, a generation unit, and a composition unit. The image acquisition unit acquires a captured image where an image of an environment of a vehicle is captured by an image-capturing device. The information acquisition unit acquires information regarding a detected position of an obstacle that exists in an environment of the vehicle. The generation unit generates a virtual viewpoint image where an environment of the vehicle is viewed from a virtual viewpoint, based on the captured image that is acquired by the image acquisition unit. The composition unit composites a notification image that provides notification of existence of the obstacle at the detected position with the virtual viewpoint image and composites a vehicle image with the virtual viewpoint image.

Abstract: To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+?Ga1-?O3(ZnO)m (0<?<1 and m=1 to 3 are satisfied), and the composition of the entire oxide semiconductor film including the c-axis-aligned crystalline region is represented by InxGayO3(ZnO)m (0<x<2, 0<y<2, and m=1 to 3 are satisfied).

Abstract: A vehicle lamp includes a lamp body, a translucent cover combined with the lamp body to form a lamp chamber in between, a printed circuit board disposed in the lamp chamber and including a light emitting element mounted thereon and a ground pattern provided on the same surface as or a surface opposite to the light emitting element, and a lamp component disposed in the lamp chamber and including a base formed of an insulating member, a conductive surface provided on at least a portion of a surface of the base, and a discharge protrusion disposed on the base so as to be closer to the ground pattern than the light emitting element and covered by the conductive surface.

Abstract: A positive electrode active material which can improve cycle characteristics of a secondary battery is provided. Two kinds of regions are provided in a superficial portion of a positive electrode active material such as lithium cobaltate which has a layered rock-salt crystal structure. The inner region is a non-stoichiometric compound containing a transition metal such as titanium, and the outer region is a compound of representative elements such as magnesium oxide. The two kinds of regions each have a rock-salt crystal structure. The inner layered rock-salt crystal structure and the two kinds of regions in the superficial portion are topotaxy; thus, a change of the crystal structure of the positive electrode active material generated by charging and discharging can be effectively suppressed.

Abstract: A semiconductor memory device comprises a first memory cell with a first variable resistance element. A first write controller is configured to write data into the first memory cell using a first voltage that is supplied via a first wiring. A second write controller configured to write data into the first memory cell using a second voltage that is lower than the first voltage when the first voltage supplied via the first wiring is reduced below a threshold level.

Abstract: A vehicle lamp includes a long lamp component, and the lamp component includes a plurality of divided parts arranged in a longitudinal direction thereof and interconnected by a joint structure. The joint structure includes a first claw configured to connect upper surfaces of two adjacent divided parts of the plurality of divided parts and a first claw receiving hole fitted into the first claw, and a second claw configured to connect lower surfaces of the two divided parts and a second claw receiving hole fitted into the second claw.

Abstract: Provided is a balance training apparatus operating in conjunction with an inverted pendulum moving apparatus on which a trainee rides and performs a moving operation. The balance training apparatus includes a detector configured to detect a position of the moving apparatus, and a controller configured to set a task for the trainee to travel back and forth from an initial position to a target position within a predetermined time and configured to superimpose a character representing the trainee at a position corresponding to a position of the moving apparatus on a video indicating progress of the task and display it on a display. The controller corrects the initial position in a task to be executed next to a position of the moving apparatus at the end of a task that has been executed last and corrects the target position according to the correction of the initial position.

Abstract: A training system includes: an inverted-pendulum mobile body including a drive wheel and a riding portion on which a rider rides in a standing position; a first detecting unit configured to detect a driving torque that is applied to the drive wheel to maintain the inverted-pendulum mobile body in an inverted state; a second detecting unit configured to detect a load applied by the rider to an assisting support portion configured to assist the rider in maintaining a balance; and an output unit configured to generate torque information about an ankle-joint torque applied by the rider to the riding portion, based on the driving torque detected by the first detecting unit and the load detected by the second detecting unit, and configured to output the torque information.

Abstract: A positive electrode active material has a small difference in a crystal structure between the charged state and the discharged state. For example, the crystal structure and volume of the positive electrode active material, which has a layered rock-salt crystal structure in the discharged state and a pseudo-spinel crystal structure in the charged state at a high voltage of approximately 4.6 V, are less likely to be changed by charging and discharging as compared with those of a known positive electrode active material. In order to form the positive electrode active material having the pseudo-spinel crystal structure in the charged state, it is preferable that a halogen source such as a fluorine and a magnesium source be mixed with particles of a composite oxide containing lithium, a transition metal, and oxygen, which is synthesized in advance, and then the mixture be heated at an appropriate temperature for an appropriate time.

Abstract: There is provided an information processing apparatus including a part generation unit configured to generate a part that is suitable for a predetermined application and that includes at least a portion of any photo and is displayed on a display screen at a time of execution of the application, and an application control unit configured to control the execution of the application and at least display the part on the display screen during the execution of the application.

Abstract: A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device is manufactured with a high yield, so that high productivity is achieved. In a semiconductor device including a transistor in which a source electrode layer and a drain electrode layer are provided over and in contact with an oxide semiconductor film, entry of impurities and formation of oxygen vacancies in an end face portion of the oxide semiconductor film are suppressed. This can prevent fluctuation in the electric characteristics of the transistor which is caused by formation of a parasitic channel in the end face portion of the oxide semiconductor film.

Abstract: A positive electrode active material particle with little deterioration is provided. A power storage device with little deterioration is provided. A highly safe power storage device is provided. The positive electrode active material particle includes a first crystal grain, a second crystal grain, and a crystal grain boundary positioned between the crystal grain and the second crystal grain; the first crystal grain and the second crystal grain include lithium, a transition metal, and oxygen; the crystal grain boundary includes magnesium and oxygen; and the positive electrode active material particle includes a region where the ratio of the atomic concentration of magnesium in the crystal grain boundary to the atomic concentration of the transition metal in first crystal grain and the second crystal grain is greater than or equal to 0.010 and less than or equal to 0.50.

Abstract: To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+?Ga1??O3(ZnO)m (0<?<1 and m=1 to 3 are satisfied), and the composition of the entire oxide semiconductor film including the c-axis-aligned crystalline region is represented by InxGayO3(ZnO)m (0<x<2, 0<y<2, and m=1 to 3 are satisfied).

Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.

Abstract: An image generation device according to an embodiment includes a synthesis unit and a superimposition unit. The synthesis unit synthesizes an overview image for a virtual viewpoint that is provided in a manner to look in a direction of travel of a vehicle so as to include at least a portion of a side of the vehicle based on a taken image that is taken by an image-taking unit that is provided on the vehicle. The superimposition unit superimposes a plane image where a vehicle has been caused to be planar, at a position of the vehicle on a road surface, on an overview image that is synthesized by the synthesis unit.

Abstract: Provided is a positive electrode active material which suppresses a reduction in capacity due to charge and discharge cycles when used in a lithium ion secondary battery. A covering layer is formed by segregation on a superficial portion of the positive electrode active material. The positive electrode active material includes a first region and a second region. The first region exists in an inner portion of the positive electrode active material. The second region exists in a superficial portion of the positive electrode active material and part of the inner portion thereof. The first region includes lithium, a transition metal, and oxygen. The second region includes magnesium, fluorine, and oxygen.

Abstract: An operation input device includes a touch detector configured to detect an operation state to an operation unit of a steering wheel of a vehicle, a controller configured to determine an operation command by fingers of an operator to the touch detector based on a touch state of the fingers of the operator to the touch detector and to operate an operation target device, and a notification unit for notifying the operator based on the operation command by the fingers determined by the controller.