Abstract: To provide a pouch for achieving a reduced storage space with a simple configuration and a method for manufacturing the pouch. A pouch (10) including a gusset portion (22) includes a pouch main body (20) and an inner supporting member (70) disposed inside the pouch main body (20). The pouch main body (20) includes a content containing portion (21) and a first fixture portion (24) and a second fixture portion (25) that face each other across the content containing portion (21). The inner supporting member (70) includes a first fixing portion (71) fixed to the first fixture portion (24) and a second fixing portion (72) fixed to the second fixture portion (25).

Abstract: To provide a pouch for achieving a reduced storage space with a simple configuration and a method for manufacturing the pouch. A pouch (10) including a gusset portion (22) includes a pouch main body (20) and an inner supporting member (70) disposed inside the pouch main body (20). The pouch main body (20) includes a content containing portion (21), and a first fixture portion (24) and a second fixture portion (25) that face each other across the content containing portion (21). The inner supporting member (70) includes a first fixing portion (71) fixed to the first fixture portion (24) and a second fixing portion (72) fixed to the second fixture portion (25).

Abstract: The purpose of the invention is to provide a very safe opener cap that can easily open a film serving as a section to be opened without scattering the contents. A can body (10) and a screw cap (20) are screwed together, and the screw cap (20) and an opener (30) are ratcheted together so as to rotate as a unit in the direction of the screw cap (20) tightening. Blade angles of an annular blade (34) are configured so that the blade angle in the direction of the screw cap (20) loosing is gentler than the blade angle in the direction of tightening.

Abstract: The purpose of the invention is to provide a very safe opener cap that can easily open a film serving as a section to be opened without scattering the contents. A can body (10) and a screw cap (20) are screwed together, and the screw cap (20) and an opener (30) are ratcheted together so as to rotate as a unit in the direction of the screw cap (20) tightening. Blade angles of an annular blade (34) are configured so that the blade angle in the direction of the screw cap (20) loosing is gentler than the blade angle in the direction of tightening.

Abstract: A semiconductor substrate comprising a silicon substrate with an oxide film on its surface, on which a silicon layer, a warp-relieved SiGe layer and a warped cap layer are formed in this order, a semiconductor device comprising a transistor, a diode, a capacitor and/or a bipolar transistor formed solely or in combination on the above semiconductor substrate and a method of manufacturing the above semiconductor substrate.

Abstract: Provided is a method of semiconductor device fabrication capable of rounding the sharp edge portions of trenches so as to form device isolation regions having high electrical reliability. A semiconductor substrate comprising a lattice-strain relaxed silicon germanium layer, a silicon germanium layer, and a lattice strained silicon layer formed in this order of mention onto a silicon substrate is used, while trenches are formed in the portions for device isolation regions of the semiconductor substrate by etching. Then, a silicon film is deposited on the entirety of the exposed surface, and the deposited silicon film is dry-oxidized so as to form a silicon dioxide film. As a result, the edge portions of the trenches are rounded.

Abstract: The present invention provides a method for manufacturing a semiconductor substrate, comprising the step of: forming a first buffer Si layer on a substrate having a silicon surface; epitaxially growing, in sequence, a first strained SiGe layer and a first Si layer above the first buffer Si layer; implanting ions into the resulting substrate followed by annealing so as to relax the lattice of the first strained SiGe layer and to thereby providing tensile strain in the first Si layer and so that tensile strain is provided in the first Si layer; and epitaxially growing, in sequence, a second buffer Si layer and a second SiGe layer above the resulting substrate; and forming a second Si layer having tensile strain on the second SiGe layer.

Abstract: Provided is a method of semiconductor device fabrication capable of rounding the sharp edge portions of trenches so as to form device isolation regions having high electrical reliability. A semiconductor substrate comprising a lattice-strain relaxed silicon germanium layer, a silicon germanium layer, and a lattice strained silicon layer formed in this order of mention onto a silicon substrate is used, while trenches are formed in the portions for device isolation regions of the semiconductor substrate by etching. Then, a silicon film is deposited on the entirety of the exposed surface, and the deposited silicon film is dry-oxidized so as to form a silicon dioxide film. As a result, the edge portions of the trenches are rounded.

Abstract: The present invention provides a method for manufacturing a semiconductor substrate, comprising the step of: forming a first buffer Si layer on a substrate having a silicon surface; epitaxially growing, in sequence, a first strained SiGe layer and a first Si layer above the first buffer Si layer; implanting ions into the resulting substrate followed by annealing so as to relax the lattice of the first strained SiGe layer and to thereby providing tensile strain in the first Si layer and so that tensile strain is provided in the first Si layer; and epitaxially growing, in sequence, a second buffer Si layer and a second SiGe layer above the rezulting substrate; and forming a second Si layer having tensile strain on the second SiGe layer.

Abstract: A semiconductor substrate comprising a silicon substrate with an oxide film on its surface, on which a silicon layer, a warp-relieved SiGe layer and a warped cap layer are formed in this order, a semiconductor device comprising a transistor, a diode, a capacitor and/or a bipolar transistor formed solely or in combination on the above semiconductor substrate and a method of manufacturing the above semiconductor substrate.

Abstract: A method for manufacturing a CMOS semiconductor device having a first conductivity type (1st-type) MOS transistor including a gate electrode made of a 1st-type polysilicon film of high impurity concentration and a second conductivity type (2nd-type) MOS transistor including a gate electrode made of a 2nd-type polysilicon film of high impurity concentration on a single semiconductor substrate, comprising the steps of: forming a polysilicon film on the substrate; forming a first resist mask on the polysilicon film so as to cover a 2nd-type MOS transistor formation region, followed by implanting a 1st-type impurity at a high concentration into the polysilicon film by using the first resist mask; removing the first resist mask; forming a second resist mask on the polysilicon film so as to cover a 1st-type MOS transistor formation region, followed by implanting a 2nd-type impurity at a high concentration into the polysilicon film by using the second resist mask; etching the 2nd-type polysilicon film by a specific