Patents by Inventor Masahiro Tsunooka
Masahiro Tsunooka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6753132Abstract: A resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: Chemical Formula 1: Chemical Formula 2: wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a fluorine atom; R3 is a protecting group released by an acid; and m is an integer of 0 through 5. Subsequently, the resist film is irradiated with exposing light of a wavelength shorter than a 180 nm band for pattern exposure, and a resist pattern is formed by developing the resist film after the pattern exposure.Type: GrantFiled: January 3, 2002Date of Patent: June 22, 2004Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Shinji Kishimura, Masayuki Endo, Masaru Sasago, Masamitsu Shirai, Masahiro Tsunooka
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Patent number: 6689536Abstract: A resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: wherein R1 and R3 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a fluorine atom; R2 is a protecting group released by an acid; and m is an integer of 0 through 5. Subsequently, the resist film is irradiated with exposing light of a wavelength shorter than a 180 nm band for pattern exposure, and a resist pattern is formed by developing the resist film after the pattern exposure.Type: GrantFiled: January 3, 2002Date of Patent: February 10, 2004Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Shinji Kishimura, Masayuki Endo, Masaru Sasago, Masamitsu Shirai, Masahiro Tsunooka
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Patent number: 6645694Abstract: A pattern formation material of this invention contains a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom; R3, R4, R5 and R6 are a hydrogen atom or a fluorine atom, at least one of which is a fluorine atom; and R7 is a protecting group released by an acid.Type: GrantFiled: August 7, 2001Date of Patent: November 11, 2003Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Shinji Kishimura, Masayuki Endo, Masaru Sasago, Masamitsu Shirai, Masahiro Tsunooka
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Publication number: 20030113670Abstract: A resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator:Type: ApplicationFiled: January 3, 2002Publication date: June 19, 2003Inventors: Shinji Kishimura, Masayuki Endo, Masaru Sasago, Masamitsu Shirai, Masahiro Tsunooka
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Patent number: 6576398Abstract: In the pattern formation method of this invention, a resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator, wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom; and R3 is a protecting group released by an acid. Then, the resist film is irradiated with exposing light of a wavelength of a 1 nm through 30 nm band or a 110 nm through 180 nm band for pattern exposure, and a resist pattern is formed by developing the resist film after the pattern exposure.Type: GrantFiled: March 6, 2001Date of Patent: June 10, 2003Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Shinji Kishimura, Masaru Sasago, Masamitsu Shirai, Masahiro Tsunooka
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Patent number: 6511786Abstract: A pattern formation material of this invention contains a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom; R3, R4, R5 and R6 are a hydrogen atom or a fluorine atom, at least one of which is a fluorine atom; and R7 is a protecting group released by an acid.Type: GrantFiled: August 8, 2001Date of Patent: January 28, 2003Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Shinji Kishimura, Masayuki Endo, Masaru Sasago, Masamitsu Shirai, Masahiro Tsunooka
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Publication number: 20020197557Abstract: A resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: 1 2Type: ApplicationFiled: January 3, 2002Publication date: December 26, 2002Inventors: Shinji Kishimura, Masayuki Endo, Masaru Sasago, Masamitsu Shirai, Masahiro Tsunooka
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Patent number: 6387598Abstract: A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group: wherein R1 indicates a hydrogen atom or an alkyl group; R2 and R3 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group or together indicate a cyclic alkyl group, a cyclic alkenyl group, a cyclic alkyl group having a phenyl group or a cyclic alkenyl group having a phenyl group; R4 indicates a hydrogen atom or an alkyl group; x satisfies a relationship of 0<x<1; and y satisfies a relationship of 0<y<1.Type: GrantFiled: April 16, 2001Date of Patent: May 14, 2002Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Takahiro Matsuo, Masayuki Endo, Masamitsu Shirai, Masahiro Tsunooka
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Patent number: 6387592Abstract: A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group: wherein R1 indicates a hydrogen atom or an alkyl group; R2 and R3 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group or together indicate a cyclic alkyl group, a cyclic alkenyl group, a cyclic alkyl group having a phenyl group or a cyclic alkenyl group having a phenyl group; R4 indicates a hydrogen atom or an alkyl group; x satisfies a relationship of 0<x<1; and y satisfies a relationship of 0<y<1.Type: GrantFiled: April 16, 2001Date of Patent: May 14, 2002Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Takahiro Matsuo, Masayuki Endo, Masamitsu Shirai, Masahiro Tsunooka
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Patent number: 6376154Abstract: A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group: wherein R1 indicates a hydrogen atom or an alkyl group; R2 and R3 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group or together indicate a cyclic alkyl group, a cyclic alkenyl group, a cyclic alkyl group having a phenyl group or a cyclic alkenyl group having a phenyl group; R4 indicates a hydrogen atom or an alkyl group; x satisfies a relationship of 0<x<1; and y satisfies a relationship of 0<y<1.Type: GrantFiled: April 17, 2001Date of Patent: April 23, 2002Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Takahiro Matsuo, Masayuki Endo, Masamitsu Shirai, Masahiro Tsunooka
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Publication number: 20020039700Abstract: A pattern formation material of this invention contains a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: 1Type: ApplicationFiled: August 8, 2001Publication date: April 4, 2002Inventors: Shinji Kishimura, Masayuki Endo, Masaru Sasago, Masamitsu Shirai, Masahiro Tsunooka
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Publication number: 20020037471Abstract: A pattern formation material of this invention contains a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator:Type: ApplicationFiled: August 7, 2001Publication date: March 28, 2002Inventors: Shinji Kishimura, Masayuki Endo, Masaru Sasago, Masamitsu Shirai, Masahiro Tsunooka
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Publication number: 20010036599Abstract: A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group: 1Type: ApplicationFiled: April 16, 2001Publication date: November 1, 2001Applicant: Matsushita Electric Industrial Co., Ltd.Inventors: Takahiro Matsuo, Masayuki Endo, Masamitsu Shiri, Masahiro Tsunooka
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Publication number: 20010034000Abstract: A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group: 1Type: ApplicationFiled: April 17, 2001Publication date: October 25, 2001Applicant: Matsushita Electric Industrial Co., Ltd.Inventors: Takahiro Matsuo, Masayuki Endo, Masamitsu Shirai, Masahiro Tsunooka
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Publication number: 20010033999Abstract: In the pattern formation method of this invention, a resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator, 1 2Type: ApplicationFiled: March 6, 2001Publication date: October 25, 2001Inventors: Shinji Kishimura, Masaru Sasago, Masamitsu Shirai, Masahiro Tsunooka
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Patent number: 6306556Abstract: A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group: wherein R1 indicates a hydrogen atom or an alkyl group; R2 and R3 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group or together indicate a cyclic alkyl group, a cyclic alkenyl group, a cyclic alkyl group having a phenyl group or a cyclic alkenyl group having a phenyl group; R4 indicates a hydrogen atom or an alkyl group; x satisfies a relationship of 0<x<1; and y satisfies a relationship of 0<y<1.Type: GrantFiled: April 18, 2000Date of Patent: October 23, 2001Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Takahiro Matsuo, Masayuki Endo, Masamitsu Shirai, Masahiro Tsunooka
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Publication number: 20010028989Abstract: In the pattern formation method of this invention, a resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator, 1 2Type: ApplicationFiled: March 6, 2001Publication date: October 11, 2001Inventors: Shinji Kishimura, Masaru Sasago, Masamitsu Shirai, Masahiro Tsunooka
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Publication number: 20010024768Abstract: A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group: 1Type: ApplicationFiled: April 16, 2001Publication date: September 27, 2001Applicant: Matsushita Electric Industrial Co., Ltd.Inventors: Takahiro Matsuo, Masayuki Endo, Masamitsu Shirai, Masahiro Tsunooka
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Patent number: 6261736Abstract: The pattern forming material of the present invention includes a polymer having a group which generates an acid when the polymer is irradiated with an energy beam or heated and a compound which generates a base when the compound is irradiated with an energy beam. The polymer is a binary polymer or a polymer of a higher degree obtained by polymerizing another group with a compound represented by the following general formula: where R1 indicates a hydrogen atom or an alkyl group, and R2 and R3 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group, or together indicate a cyclic alkyl group, a cyclic alkenyl group, a cyclic alkyl group having a phenyl group or a cyclic alkenyl group having a phenyl group.Type: GrantFiled: October 12, 1999Date of Patent: July 17, 2001Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Masayuki Endo, Masamitsu Shirai, Masahiro Tsunooka
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Patent number: 6120974Abstract: A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group: ##STR1## wherein R.sub.1 indicates a hydrogen atom or an alkyl group; R.sub.2 and R.sub.3 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group or together indicate a cyclic alkyl group, a cyclic alkenyl group, a cyclic alkyl group having a phenyl group or a cyclic alkenyl group having a phenyl group; R.sub.4 indicates a hydrogen atom or an alkyl group; x satisfies a relationship of 0<x<1; and y satisfies a relationship of 0<y<1.Type: GrantFiled: June 7, 1999Date of Patent: September 19, 2000Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Takahiro Matsuo, Masayuki Endo, Masamitsu Shirai, Masahiro Tsunooka