Patents by Inventor Masahiro UJIKE

Masahiro UJIKE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and manufacturing method thereof
    Patent number: 11462634
    Abstract: An object of the present invention is to provide a semiconductor device capable of reducing the on-voltage and a manufacturing method thereof. According to the present invention, a semiconductor device includes a Si substrate, a p-type anode layer provided on the front surface of the Si substrate, an anode electrode provided on the p-type anode layer, an n-type cathode layer and a p-type cathode layer provided adjacent to each other on a back surface of the Si substrate, an Al alloy layer provided on the n-type cathode layer and containing Si, and an Al alloy layer provided on the p-type cathode layer and containing Si, in which impurity concentration in the n-type cathode layer is 1E19 cm?3 or higher and impurity concentration in the p-type cathode layer is 10% or lower of the impurity concentration in the n-type cathode layer.
    Type: Grant
    Filed: August 11, 2020
    Date of Patent: October 4, 2022
    Assignee: Mitsubishi Electric Corporation
    Inventors: Koji Tanaka, Ryuji Ueno, Masahiro Ujike
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20210143269
    Abstract: An object of the present invention is to provide a semiconductor device capable of reducing the on-voltage and a manufacturing method thereof. According to the present invention, a semiconductor device includes a Si substrate, a p-type anode layer provided on the front surface of the Si substrate, an anode electrode provided on the p-type anode layer, an n-type cathode layer and a p-type cathode layer provided adjacent to each other on a back surface of the Si substrate, an Al alloy layer provided on the n-type cathode layer and containing Si, and an Al alloy layer provided on the p-type cathode layer and containing Si, in which impurity concentration in the n-type cathode layer is 1E19 cm?3 or higher and impurity concentration in the p-type cathode layer is 10% or lower of the impurity concentration in the n-type cathode layer.
    Type: Application
    Filed: August 11, 2020
    Publication date: May 13, 2021
    Applicant: Mitsubishi Electric Corporation
    Inventors: Koji TANAKA, Ryuji UENO, Masahiro UJIKE