Abstract: The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.

Abstract: The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.

Abstract: The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.

Abstract: The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.

Abstract: The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.

Abstract: A display device has a thin film transistor on a substrate. The thin film transistor includes a first transistor having an oxide semiconductor film, a first gate insulating film, and a first gate electrode and a second transistor having a silicon semiconductor film, a second gate insulating film, and a second gate electrode. The first gate insulating film includes a first insulating film and a second insulating film. The oxide semiconductor film is positioned between the first insulating film and the substrate. The first insulating film is positioned between the silicon semiconductor film and the substrate and between the second insulating film and the substrate. The second gate insulating film includes an insulating film made of the same material in the same layer as the second insulating film. The first gate electrode and the second gate electrode are in the same layer.

Abstract: A semiconductor device including a first oxide insulating layer, a barrier layer above the first oxide insulating layer, the barrier layer including an opening, a second oxide insulating layer above the first oxide insulating layer at a position overlapping the opening, an oxide semiconductor layer facing the first oxide insulating layer interposed by the second oxide insulating layer at a position overlapping the opening, a gate electrode facing the oxide semiconductor layer at side opposite to the first oxide insulating layer with respect to the oxide semiconductor layer, and a gate insulating layer between the oxide semiconductor layer and the gate electrode. A contained amount of oxygen in the first oxide insulating layer is larger than a contained amount of oxygen in the second oxide insulating layer.

Abstract: A display device has a thin film transistor on a substrate. The thin film transistor includes a first transistor having an oxide semiconductor film, a first gate insulating film, and a first gate electrode and a second transistor having a silicon semiconductor film, a second gate insulating film, and a second gate electrode. The first gate insulating film includes a first insulating film and a second insulating film. The oxide semiconductor film is positioned between the first insulating film and the substrate. The first insulating film is positioned between the silicon semiconductor film and the substrate and between the second insulating film and the substrate. The second gate insulating film includes an insulating film made of the same material in the same layer as the second insulating film. The first gate electrode and the second gate electrode are in the same layer.

Abstract: A display device has a thin film transistor on a substrate. The thin film transistor includes a first transistor having an oxide semiconductor film, a first gate insulating film, and a first gate electrode and a second transistor having a silicon semiconductor film, a second gate insulating film, and a second gate electrode. The first gate insulating film includes a first insulating film and a second insulating film. The oxide semiconductor film is positioned between the first insulating film and the substrate. The first insulating film is positioned between the silicon semiconductor film and the substrate and between the second insulating film and the substrate. The second gate insulating film includes an insulating film made of the same material in the same layer as the second insulating film. The first gate electrode and the second gate electrode are in the same layer.

Abstract: The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.

Abstract: A manufacturing method of a display device includes: forming, in a resin layer including a display area where a plurality of lower electrodes is formed and a peripheral area surrounding the display area, a band-like groove which divides the resin layer in a form of surrounding the display area; forming an organic electroluminescence layer including a light emitting layer, on the resin layer and inside the band-like groove in such a way as to be placed on the plurality of lower electrodes; irradiating the organic electroluminescence layer with a pulse laser and thus eliminating the organic electroluminescence layer in such a way that a part of the organic electroluminescence layer is left in a shape of an island at least on a bottom surface of the band-like groove and that the bottom surface of the band-like groove is continuously exposed in the form of surrounding the display area.

Abstract: A semiconductor device including a first oxide insulating layer, a barrier layer above the first oxide insulating layer, the barrier layer including an opening, a second oxide insulating layer above the first oxide insulating layer at a position overlapping the opening, an oxide semiconductor layer facing the first oxide insulating layer interposed by the second oxide insulating layer at a position overlapping the opening, a gate electrode facing the oxide semiconductor layer at side opposite to the first oxide insulating layer with respect to the oxide semiconductor layer, and a gate insulating layer between the oxide semiconductor layer and the gate electrode. A contained amount of oxygen in the first oxide insulating layer is larger than a contained amount of oxygen in the second oxide insulating layer.

Abstract: A display device has a thin film transistor on a substrate. The thin film transistor includes a first transistor having an oxide semiconductor film, a first gate insulating film, and a first gate electrode and a second transistor having a silicon semiconductor film, a second gate insulating film, and a second gate electrode. The first gate insulating film includes a first insulating film and a second insulating film. The oxide semiconductor film is positioned between the first insulating film and the substrate. The first insulating film is positioned between the silicon semiconductor film and the substrate and between the second insulating film and the substrate. The second gate insulating film includes an insulating film made of the same material in the same layer as the second insulating film. The first gate electrode and the second gate electrode are in the same layer.

Abstract: A manufacturing method of a display device includes: forming, in a resin layer including a display area where a plurality of lower electrodes is formed and a peripheral area surrounding the display area, a band-like groove which divides the resin layer in a form of surrounding the display area; forming an organic electroluminescence layer including a light emitting layer, on the resin layer and inside the band-like groove in such a way as to be placed on the plurality of lower electrodes; irradiating the organic electroluminescence layer with a pulse laser and thus eliminating the organic electroluminescence layer in such a way that a part of the organic electroluminescence layer is left in a shape of an island at least on a bottom surface of the band-like groove and that the bottom surface of the band-like groove is continuously exposed in the form of surrounding the display area.

Abstract: To provide a cleaning blade having an elastic body portion containing urethane rubber and a support member supporting the elastic body portion. A free end portion of the elastic body has a first region in which the Young's modulus gradually decreases in the depth direction from the principal surface facing the surface of the member to be cleaned on the edge face side and a second region in which the Young's modulus does not vary in the depth direction from the principal surface on the side closer to the support member relative to the first region.

Abstract: To provide a cleaning blade having an elastic body portion containing urethane rubber and a support member supporting the elastic body portion. A free end portion of the elastic body has a first region in which the Young's modulus gradually decreases in the depth direction from the principal surface facing the surface of the member to be cleaned on the edge face side and a second region in which the Young's modulus does not vary in the depth direction from the principal surface on the side closer to the support member relative to the first region.

Abstract: A urethane rubber cleaning blade, wherein a surface of a contact portion of the cleaning blade that comes into contact with a member to be cleaned has a Young's modulus (Y0) of 10 mgf/?m2 or more and 400 mgf/?m2 or less, the ratio (Y50/Y0) of the Young's modulus (Y50) of an internal portion of the cleaning blade 50 ?m spaced apart from the surface of the contact portion to the Young's modulus (Y0) is 0.5 or less, and the average rate of change in Young's modulus from the surface to an internal portion of the cleaning blade 20 ?m spaced apart from the surface is greater than or equal to the average rate of change in Young's modulus from the internal portion of the cleaning blade 20 ?m spaced apart from the surface to an internal portion of the cleaning blade 50 ?m spaced apart from the surface.

Abstract: In a method for producing a cleaning blade, a first composition obtained by causing a reaction of diphenylmethane diisocyanate and a first aliphatic polyester polyol which has a number-average molecular weight of 2000 to 3500 and is used in an amount of 20 to 40 mol % relative to the diphenylmethane diisocyanate and a second composition containing a urethane rubber-synthesizing catalyst and a second aliphatic polyester polyol which has a number-average molecular weight of 2000 to 3500 and is the same as or different from the first aliphatic polyester polyol are mixed so that a relationship between a number of moles (MNCO [mol]) of an NCO group in the first composition and a number of moles (MOH [mol]) of an OH group in the second composition satisfies 0.05?MOH/MNCO?0.20.

Abstract: A cleaning blade includes a polyester urethane rubber. In an IR spectrum measured by ?ATR on the surface of a contact portion of the polyester urethane rubber at which the cleaning blade comes into contact with a member to be cleaned, a ratio (ISI/ISE) of an intensity (ISI) of a C—N peak due to an isocyanurate group included in the polyester urethane rubber to an intensity (ISE) of a C?O peak due to an ester group included in the polyester urethane rubber is 0.65 or more and 2.50 or less. A siloxane compound is present on the surface of the contact portion of the polyester urethane rubber.

Abstract: A cleaning blade includes a polyester urethane rubber. In an IR spectrum measured by ?ATR on the surface of a contact portion of the polyester urethane rubber at which the cleaning blade comes into contact with a member to be cleaned, a ratio (ISI/ISE) of an intensity (ISI) of a C—N peak due to an isocyanurate group included in the polyester urethane rubber to an intensity (ISE) of a C?O peak due to an ester group included in the polyester urethane rubber is 0.65 or more and 2.50 or less. A siloxane compound is present on the surface of the contact portion of the polyester urethane rubber.