Patents by Inventor Masahiro Yahagi

Masahiro Yahagi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8369855
    Abstract: Disclosed is a mobile communications system including a plurality of base station apparatuses which are located at geographically dispersed locations and perform a wireless communication with a mobile device. The system further includes a maximum ratio combining unit which performs maximum ratio combining processing regarding a signal the base station apparatuses receive from the mobile device, and a selection combining unit which performs selection combining processing regarding the signal from the mobile device. A selection unit included in the system selects one or both of the maximum ratio combining unit and the selection combining unit according to at least one of an external factor and a change of a distribution state of the mobile device under communication.
    Type: Grant
    Filed: January 10, 2012
    Date of Patent: February 5, 2013
    Assignee: NEC Corporation
    Inventor: Masahiro Yahagi
  • Patent number: 5544002
    Abstract: A high voltage capacitor is disclosed that comprises a grounding member (1), two through type capacitors (2 and 3), an insulating case (6) and insulating resin (71 and 72). The grounding member (1) has two raised portions (101 and 102) on which the through type capacitors (2 and 3) are secured. The insulating case (6) has two hollow cylindrical portions (61, 62) spaced apart by a distance D with their upper open ends joined to each other to form a recessed enclosure (63) in line with and following the inner diameter sections (611, 621) of the hollow cylindrical portions (61, 82) and their lower open ends fitted on the outer circumference of the raised portions (101, 102). The insulating resin (71 and 72) is provided around the through type capacitors (2 and 3) within the inner diameter sections (611, 621).
    Type: Grant
    Filed: February 24, 1994
    Date of Patent: August 6, 1996
    Assignee: TDK Corporation
    Inventors: Shouichi Iwaya, Masahiro Yahagi, Hitoshi Kudou, Shigeru Itou, Isao Fujiwara, Tadashi Ogasawara, Makoto Morita, Teruo Taguchi, Setuo Sasaki
  • Patent number: 5496171
    Abstract: The present invention intends to provide a surface combustion burner which can permit high intensity combustion at the burner surface by preventing the occurrence of a lift phenomenon of flames due to whirling of air from the peripheral portion of the surface combustion burner. To this end, a mixing chamber positioned rearwardly of a porous member having its front surface constituting a combustion surface is divided by a partition wall into a first mixing chamber positioned at a central portion and a second mixing chamber positioned to surround the first mixing chamber so that fuel gas mixtures at different air ratios are supplied to the first and second mixing chambers, respectively, and/or the porous member having its front surface serving as the combustion surface has a resistance against the flow velocity of fuel gas mixture which is higher at a peripheral edge nearby region than at the remaining region.
    Type: Grant
    Filed: August 25, 1994
    Date of Patent: March 5, 1996
    Assignee: Tokyo Gas Co., Ltd.
    Inventors: Hidenari Ozawa, Kazutaka Kato, Keiichi Ohgi, Masahiro Yahagi
  • Patent number: 4889837
    Abstract: A semiconductive ceramic composition for a boundary insulation type semiconductive ceramic capacitor capable of causing the capacitor to exhibit increased dielectric constant, satisfactory frequency and temperature characteristics, and decreased dielectric loss. The composition includes a SrTiO.sub.3 base component and a minor component consisting of CaTiO.sub.3, Y.sub.2 O.sub.3 and Nb.sub.2 O.sub.5. The composition may further contain MnO and SiO.sub.2, which contribute to an increase in insulation resistance of the capacitor and enlargement of an appropriate range of a (SrO+CaO)/TiO.sub.2, respectively. Also, a composition includes a SrTiO.sub.3 base component and a minor component consisting of CaTiO.sub.3, BaTiO.sub.3, Y.sub.2 O.sub.3 and Nb.sub.2 O.sub.5.
    Type: Grant
    Filed: August 21, 1987
    Date of Patent: December 26, 1989
    Assignee: TDK Corporation
    Inventors: Shuichi Ono, Shuichi Itagaki, Masahiro Yahagi
  • Patent number: 4861736
    Abstract: A semiconductive ceramic composition for a reduction reoxidation type semiconductive ceramic capacitor capable of increasing capacitor, dielectric strength of the capacitor and improving temperature characteristics of the capacitor. The composition includes a BaTIO.sub.3 base component and a minor component consisting of Nb and Ce. Nb and Ce are present in amounts of 0.2 to 3.0 mol % on Nb.sub.2 O.sub.5 and CeO.sub.2 bases. Addition of Co and the like increases insulation resistance and D.C. breakdown voltage of the capacitor and further improves temperature characteristics of the capacitor.
    Type: Grant
    Filed: August 4, 1987
    Date of Patent: August 29, 1989
    Assignee: TDK Corporation
    Inventors: Shuichi Ono, Masahiro Yahagi, Shuichi Itagaki, Nobuaki Kikuchi
  • Patent number: 4854936
    Abstract: A semiconductive ceramic composition capable of exhibiting excellent electrical and physical characteristics sufficient to be used for a boundary-layer type semiconductive ceramic capacitor and such a capacitor capable of being increased in dielectric constant and insulation resistance and exhibiting excellent solderability and tensile strength of electrodes. The composition includes a SrTiO.sub.3 base material and an additive for semiconductivity consisting of Y.sub.2 O.sub.3 and Nb.sub.2 O.sub.5. The Y.sub.2 O.sub.3 and Nb.sub.2 O.sub.5 each are present in an amount of 0.1 to 0.4 mol % based on the composition. The capacitor includes a semiconductive ceramic body formed of the composition, a first conductive layer formed on each of both surfaces of the body and a second conductive layer formed on the first conductive layer. A process for manufacturing the capacitor is also provided.
    Type: Grant
    Filed: November 15, 1988
    Date of Patent: August 8, 1989
    Assignee: TDK Corporation
    Inventors: Shuichi Ono, Shuichi Itagaki, Masahiro Yahagi, Kiyoshi Furukawa, Shinobu Fujiwara, Yasunobu Oikawa
  • Patent number: 4799127
    Abstract: A semiconductive ceramic composition capable of exhibiting excellent electrical and physical characteristics sufficient to be used for a boundary-layer type semiconductive ceramic capacitor and such a capacitor capable of being increased in dielectric constant and insulation resistance and exhibiting excellent solderability and tensile strength of electrodes. The composition includes a SrTiO.sub.3 base material and an additive for semiconductivity consisting of Y.sub.2 O.sub.3 and Nb.sub.2 O.sub.5. The Y.sub.2 O.sub.3 and Nb.sub.2 O.sub.5 each are present in an amount of 0.1 to 0.4 mol % based on the composition. The capacitor includes a semiconductive ceramic body formed of the composition, a first conductive layer formed on each of both surfaces of the body and a second conductive layer formed on the first conductive layer. A process for manufacturing the capacitor is also provided.
    Type: Grant
    Filed: July 29, 1987
    Date of Patent: January 17, 1989
    Assignee: TDK Corporation
    Inventors: Shuichi Ono, Shuichi Itagaki, Masahiro Yahagi, Kiyoshi Furukawa, Shinobu Fujiwara, Yasunobu Oikawa