Abstract: A compound represented by formula (1) provides a high performance organic electroluminescence device and a novel material for realizing such an organic electroluminescence device: wherein R1 to R6, a to f, L1 to L3, and Ar are as defined in the description.

Abstract: A methane production system comprises: a reaction tank that produces methane and water by reacting CO and/or CO2 supplied to the reaction tank with hydrogen; a cleaning tank that is located at an upstream side of the reaction tank in a supply direction of the CO and/or CO2, and removes water-soluble impurities from a raw material gas including the CO and/or CO2 and the water-soluble impurities by bringing the raw material gas into contact with water; and a first supply line that supplies the raw material gas from which the water-soluble impurities are removed from the cleaning tank to the reaction tank; and a second supply line supplies water produced in the reaction tank from the reaction tank to the cleaning tank to bring the produced water into contact with the raw material gas in the cleaning tank.

Abstract: A methane production system comprises: a reaction tank that produces methane and water by reacting CO and/or CO2 supplied to the reaction tank with hydrogen; a cleaning tank that is located at an upstream side of the reaction tank in a supply direction of the CO and/or CO2, and removes water-soluble impurities from a raw material gas including the CO and/or CO2 and the water-soluble impurities by bringing the raw material gas into contact with water; and a first supply line that supplies the raw material gas from which the water-soluble impurities are removed from the cleaning tank to the reaction tank; and a second supply line supplies water produced in the reaction tank from the reaction tank to the cleaning tank to bring the produced water into contact with the raw material gas in the cleaning tank.

Abstract: The present application is a generation device including a reaction section which generates a product gas and product water in which the product gas is dissolved through an exothermic reaction of gaseous reactants, a cooling tower which cools cooling water that removes heat generated by the exothermic reaction, a cooling water circulation system which circulates the cooling water between the reaction section and the cooling tower, and piping for mixing the product water generated in the reaction section into the cooling water circulation system.

Abstract: In a thin film capacitor, a first electrode layer 1 has one or more regions B in which a distance Hb between a boundary surface I of the first electrode layer 1 and a dielectric layer 2, and a surface of the first electrode layer 1, becomes maximum, and an outer layer 12 has one or more regions T in which a distance Ht between the boundary surface I and a surface of the outer layer 12 becomes maximum, as well as one or more regions t in which the distance Ht between the boundary surface I and the surface of the outer layer 12 does not become maximum. A projected area SHb, a projected area SHt, and a projected area S, satisfy equations (1) and (2): 60%?(SHb/S)??(1); 60%?(SHt/S)??(2).

Abstract: The present application is a generation device including a reaction section which generates a product gas and product water in which the product gas is dissolved through an exothermic reaction of gaseous reactants, a cooling tower which cools cooling water that removes heat generated by the exothermic reaction, a cooling water circulation system which circulates the cooling water between the reaction section and the cooling tower, and piping for mixing the product water generated in the reaction section into the cooling water circulation system.

Abstract: The present invention provides a thin film capacitor including a first electrode layer, a second electrode layer, and a dielectric layer provided between the first electrode layer and the second electrode layer, wherein a ratio (S/S0) of a surface area S of a surface of the first electrode layer on an opposite side to the dielectric layer to a projected area S0 in a thickness direction of the first electrode layer is 1.01 to 5.00.

Abstract: In a thin film capacitor, a first electrode layer 1 has one or more regions B in which a distance Hb between a boundary surface I of the first electrode layer 1 and a dielectric layer 2, and a surface of the first electrode layer 1, becomes maximum, and an outer layer 12 has one or more regions T in which a distance Ht between the boundary surface I and a surface of the outer layer 12 becomes maximum, as well as one or more regions t in which the distance Ht between the boundary surface I and the surface of the outer layer 12 does not become maximum. A projected area SHb, a projected area SHt, and a projected area S, satisfy equations (1) and (2): 60%?(SHb/S)??(1); 60%?(SHt/S)??(2).

Abstract: The present invention provides a thin film capacitor including a first electrode layer, a second electrode layer, and a dielectric layer provided between the first electrode layer and the second electrode layer, wherein a ratio (S/S0) of a surface area S of a surface of the first electrode layer on an opposite side to the dielectric layer to a projected area S0 in a thickness direction of the first electrode layer is 1.01 to 5.00.

Abstract: A surface acoustic wave element comprises a first surface acoustic wave element unit formed on a surface of a piezo-electric substrate, and a second surface acoustic wave element unit formed on the surface of said piezo-electric substrate adjacent to said first surface acoustic wave element unit. Each of said first surface acoustic wave element unit and said second surface acoustic wave element unit includes a signal input terminal, a signal output terminal, a ground terminal, a signal path for coupling said signal input terminal to the signal output terminal, series arm resonators connected in series on said signal path, a branch line branched from said signal path to said ground terminal, and parallel arm resonators connected on said branch line. The signal path of at least one of the first surface acoustic wave element unit and second surface acoustic wave element unit is extended outside of the center line of said surface acoustic wave element unit.

Abstract: A demultiplexer includes a common terminal; a plurality of surface acoustic wave filters formed of surface acoustic wave devices, having signal terminals connected to the common terminal and having pass bands different from one another; and a phase shifter formed of a lumped constant element disposed between the common terminal and predetermined one of the surface acoustic wave filters having input impedance exerting influence on matching between impedance in the pass band of the predetermined surface acoustic wave filter viewed from the common terminal side and impedance viewed from the signal terminal side.