Abstract: In a liquid crystal substrate in which a matrix of reflecting electrodes is formed on a substrate, a transistor is formed corresponding to each reflective electrode and a voltage is applied to the reflective electrode through the transistor. A silicon oxide film having a thickness of 500 to 2,000 angstroms is used as the passivation film and the thickness is set to a value in response to the wavelength of the incident light to maintain a substantially constant reflectance.

Abstract: An electro-optical device comprises: a first data line extending in a first direction; a second data line extending in the first direction and arranged so as to be at least partially overlapped with the first data line; a first scanning line and a second scanning line extending in a second direction intersecting the first direction; a first transistor electrically connected to the first data line and electrically connected to the first scanning line; a first pixel electrode electrically connected to the first transistor; a second transistor electrically connected to the second data line and electrically connected to the second scanning line; and a second pixel electrode electrically connected to the second transistor.

Abstract: In a liquid crystal substrate in which a matrix of reflecting electrodes is formed on a substrate, a transistor is formed corresponding to each reflective electrode and a voltage is applied to the reflective electrode through the transistor. A silicon oxide film having a thickness of 500 to 2,000 angstroms is used as the passivation film and the thickness is set to a value in response to the wavelength of the incident light to maintain a substantially constant reflectance.

Abstract: In a liquid crystal substrate in which a matrix of reflecting electrodes is formed on a substrate, a transistor is formed corresponding to each reflective electrode and a voltage is applied to the reflective electrode through the transistor. A silicon oxide film having a thickness of 500 to 2,000 angstroms is used as the passivation film and the thickness is set to a value in response to the wavelength of the incident light to maintain a substantially constant reflectance.

Abstract: In a liquid crystal substrate in which a matrix of reflecting electrodes is formed on a substrate, a transistor is formed corresponding to each reflective electrode and a voltage is applied to the reflective electrode through the transistor. A silicon oxide film having a thickness of 500 to 2,000 angstroms is used as the passivation film and the thickness is set to a value in response to the wavelength of the incident light to maintain a substantially constant reflectance.

Abstract: An electro-optical device includes a plurality of storage capacitors each in a corresponding pixel. Each storage capacitor includes a first capacitor electrode and a second capacitor electrode with a dielectric film therebetween. The first capacitor electrode is made of the same film as one of the semiconductor films in pixel transistors. The second capacitor electrode is provided at a layer over the gate electrode of the pixel transistors. The second capacitor electrode has a first main portion opposite to the first capacitor electrode and an extending portion that extends from the first main portion to at least partially cover the second junction region. An interlayer insulation film insulates the extending portion from the pixel transistor.

Abstract: An electro-optical device includes a contact hole with a channel-region adjacent portion next to the channel region of the semiconductor film and a first extending portion that extends from the channel-region adjacent portion along the first partial region of the semiconductor film when viewed in plan.

Abstract: An electro-optical device includes: a substrate; a plurality of pixel units provided in a display region on the substrate; and a driving circuit that is provided in a peripheral region surrounding the display region and includes semiconductor elements that drive the plurality of pixel units, each of the semiconductor elements having a first semiconductor layer and a second semiconductor layer. The first semiconductor layer has an SOI (silicon on insulator) structure including a first single crystal silicon layer, and the second semiconductor layer is formed of a second single crystal silicon layer that is formed on the first semiconductor layer by epitaxial growth.

Abstract: In a liquid crystal substrate in which a matrix of reflecting electrodes is formed on a substrate, a transistor is formed corresponding to each reflective electrode and a voltage is applied to the reflective electrode through the transistor. A silicon oxide film having a thickness of 500 to 2,000 angstroms is used as the passivation film and the thickness is set to a value in response to the wavelength of the incident light to maintain a substantially constant reflectance.

Abstract: An electro-optical device includes a semiconductor layer, a gate electrode, and a first insulating film, and a second insulating under the semiconductor layer. The first insulating film overlaps a junction region, but not a channel region, of the semiconductor layer. The gate electrode includes a first extended portion that continuously covers an upper and side face and of the first insulating film at the junction region. The gate electrode includes a second extended portion that overlaps and fills a groove in the second insulating that extends along at least the junction region.

Abstract: An electro-optical device includes a semiconductor layer, a gate electrode, and a first insulating film, and a second insulating under the semiconductor layer. The first insulating film overlaps a junction region, but not a channel region, of the semiconductor layer. The gate electrode includes a first extended portion that continuously covers an upper and side face and of the first insulating film at the junction region. The gate electrode includes a second extended portion that overlaps and fills a groove in the second insulating that extends along at least the junction region.

Abstract: In a liquid crystal substrate in which a matrix of reflecting electrodes is formed on a substrate, a transistor is formed corresponding to each reflective electrode and a voltage is applied to the reflective electrode through the transistor. A silicon oxide film having a thickness of 500 to 2,000 angstroms is used as the passivation film and the thickness is set to a value in response to the wavelength of the incident light to maintain a substantially constant reflectance.

Abstract: An electro-optical device includes a contact hole with a channel-region adjacent portion next to the channel region of the semiconductor film and a first extending portion that extends from the channel-region adjacent portion along the first partial region of the semiconductor film when viewed in plan.

Abstract: An electro-optical device includes a plurality of storage capacitors each in a corresponding pixel. Each storage capacitor includes a first capacitor electrode and a second capacitor electrode with a dielectric film therebetween. The first capacitor electrode is made of the same film as one of the semiconductor films in pixel transistors. The second capacitor electrode is provided at a layer over the gate electrode of the pixel transistors. The second capacitor electrode has a first main portion opposite to the first capacitor electrode and an extending portion that extends from the first main portion to at least partially cover the second junction region. An interlayer insulation film insulates the extending portion from the pixel transistor.

Abstract: A method of manufacturing an electro-optical device, which, on a substrate, has a plurality of data lines, a plurality of scanning lines, a plurality of driving elements formed to correspond to intersections of the plurality of data lines and the plurality of scanning lines for pixels, and a plurality of pixel electrodes provided to correspond to the driving elements, includes forming an etching stopping layer, forming a common line that is provided above the etching stopping layer to short-circuit the plurality of scanning lines and the plurality of scanning lines, forming a first interlayer insulating film that isolates the plurality of data lines and the plurality of pixel electrodes from the plurality of scanning lines and the plurality of driving elements, forming contact holes that electrically connect the plurality of data lines and the plurality of pixel electrodes to the plurality of driving elements, forming the plurality of data lines, and forming a cutting hole in the first interlayer insulating f

Abstract: The present invention is a liquid crystal panel substrate that comprises: pixel units each having a pixel electrode, to be used as a reflective electrode and arranged in a matrix pattern on a substrate, and a switching element controlling a voltage applied to the pixel electrode; wherein between the pixel electrode and a conductive layer forming a terminal electrode of the switching element, a contact hole is provided for connecting the pixel electrode and the terminal electrode. A light-shielding layer, having an opening surrounding the portion in which the contact hole is formed, and having no opening in regions between a plurality of adjacent pixel electrodes, is formed between the pixel electrode and the conductive layer. Harmful effects due to light leaking through a space between the pixel electrodes can thereby be prevented.

Abstract: In a liquid crystal substrate in which a matrix of reflecting electrodes is formed on a substrate, a transistor is formed corresponding to each reflective electrode and a voltage is applied to the reflective electrode through the transistor. A silicon oxide film having a thickness of 500 to 2,000 angstroms is used as the passivation film and the thickness is set to a value in response to the wavelength of the incident light to maintain a substantially constant reflectance.

Abstract: The present invention is a liquid crystal panel substrate that comprises: pixel units each having a pixel electrode, to be used as a reflective electrode and arranged in a matrix pattern on a substrate, and a switching element controlling a voltage applied to the pixel electrode; wherein between the pixel electrode and a conductive layer forming a terminal electrode of the switching element, a contact hole is provided for connecting the pixel electrode and the terminal electrode. A light-shielding layer, having an opening surrounding the portion in which the contact hole is formed, and having no opening in regions between a plurality of adjacent pixel electrodes, is formed between the pixel electrode and the conductive layer. Harmful effects due to light leaking through a space between the pixel electrodes can thereby be prevented.

Abstract: In a liquid crystal substrate in which a matrix of reflecting electrodes is formed on a substrate, a transistor is formed corresponding to each reflective electrode and a voltage is applied to the reflective electrode through the transistor. A silicon oxide film having a thickness of 500 to 2,000 angstroms is used as the passivation film and the thickness is set to a value in response to the wavelength of the incident light to maintain a substantially constant reflectance.

Abstract: An electro-optical device substrate includes a substrate, a plurality of data lines and a plurality of scanning lines crossing each other on the substrate, and a plurality of pixels defined by the plurality of data lines and the plurality of scanning lines so as to correspond to intersections thereof. Each pixel includes a pixel electrode, a conducting layer formed in a non-opening region separating an opening region of the pixel from that of another pixel, the conducting layer having a protruding portion protruding into the opening region from a part of one of a plurality of region edges defining the opening region, and a first contact portion electrically connecting the pixel electrode and the protruding portion.