Abstract: In order to extend the cycle of gas cleaning for a film-forming device, a method for manufacturing a semiconductor device includes: a substrate carry-in process for carrying a substrate into a processing chamber; a film forming process for laminating at least two types of films on the substrate in the processing chamber; a substrate carry-out process for carrying the film laminated substrate out from the processing chamber; an etching process for supplying an etching gas into the processing chamber while the substrate is not in the processing chamber after the substrate carry-out process. The etching process includes a first cleaning process for supplying a fluorine-containing gas activated by plasma excitation into the processing chamber as an etching gas; and a second cleaning process for supplying a fluorine-containing gas activated by heat into the processing chamber as an etching gas.

Abstract: In order to extend the cycle of gas cleaning for a film-forming device, a method for manufacturing a semiconductor device includes: a substrate carry-in process for carrying a substrate into a processing chamber; a film forming process for laminating at least two types of films on the substrate in the processing chamber; a substrate carry-out process for carrying the film laminated substrate out from the processing chamber; an etching process for supplying an etching gas into the processing chamber while the substrate is not in the processing chamber after the substrate carry-out process. The etching process includes a first cleaning process for supplying a fluorine-containing gas activated by plasma excitation into the processing chamber as an etching gas; and a second cleaning process for supplying a fluorine-containing gas activated by heat into the processing chamber as an etching gas.

Abstract: A semiconductor device manufacturing method comprises the steps of loading a substrate into a processing chamber, mounting the substrate on a support tool in the processing chamber, processing the substrate mounted on the support tool by supplying process gas into the processing chamber, purging the interior of the processing chamber after the substrate processing step, and unloading the processed substrate from the processing chamber after the step of purging the interior of the processing chamber, wherein in the step of purging the interior of the processing chamber, exhaust is performed toward above the substrate and toward below the substrate in the processing chamber, and the exhaust rate toward above the substrate is set larger than the exhaust rate toward below the substrate.