Abstract: An apparatus for fabricating a semiconductor device, whereby a semiconductor wafer is thermally treated with a wafer treatment device. The semiconductor wafer is delivered with a conveyer to the wafer treatment device. The temperature of the conveyer is controlled to have an optimum temperature by an arm heater and an arm cooler.

Abstract: In a semiconductor device, particles are removed from the surface of a gold conductive layer before an intermediate insulating layer of an amino silane compound is formed. An organic insulating layer is formed on the intermediate insulating layer. As a result, adhesion strength between the conductive layer and the intermediate insulating layer can be improved.

Abstract: Particles are removed from a surface of a gold conductive layer before forming an intermediate insulating layer of an amino silane compound.

Abstract: In a method for fabricating a semiconductor device, a semiconductor wafer is thermally treated with a wafer treatment device. The semiconductor wafer is delivered with a conveyer to the wafer treatment device. The temperature of the conveyer is controlled to have an optimum temperature.

Abstract: In a method for forming a semiconductor device, when polishing the wafer, the photo-resin so as to cure with ultraviolet is buried. Then, after polishing and forming the back side electrode, the photo-resin is removed by organic solvent. Accordingly, the method can improve reliability of bonding and simplify process flow without decreasing electrical characteristics.

Abstract: A method of fabricating an integrated circuit of which a bonding condition can be evaluated simply is provided. Two external connecting electrodes are provided on the surface, via holes are formed below them, and conductive portions are formed in the via holes. Then, a first metal film is formed on a rear face of a chip and a second metal film is formed on a surface of a ceramic substrate, and then both of them are made contact and heated so as to bond the chip and the ceramic substrate. Further, when the first metal film is formed, a slit portion which no first metal film exists is provided. When the bonding condition is evaluated, a resistance between two external connecting electrodes is measured.

Abstract: In a method for fabricating a semiconductor device, a semiconductor wafer is thermally treated with a wafer treatment device, such as in a diffustion process. The semiconductor wafer is deliverd to the treatment device using a conveyor system. The conveyor system is operated in an arrangement consisting of at least two connected armatures and is operated with both heating and cooling elements. The heating and cooling element are implemented for optimal temperture control of the connected conveyor arms with respect to increase throughout while avoiding thermal shock.

Abstract: A method of fabricating an integrated circuit of which a bonding condition can be evaluated simply is provided. Two external connecting electrodes are provided on the surface, via holes are formed below them, and conductive portions are formed in the via holes. Then, a first metal film is formed on a rear face of a chip and a second metal film is formed on a surface of a ceramic substrate, and then both of them are made contact and heated so as to bond the chip and the ceramic substrate. Further, when the first metal film is formed, a slit portion which no first metal film exists is provided. When the bonding condition is evaluated, a resistance between two external connecting electrodes is measured.

Abstract: A method of fabricating an integrated circuit of which a bonding condition can be evaluated simply is provided. Two external connecting electrodes are provided on the surface, via holes are formed below them, and conductive portions are formed in the via holes. Then, a first metal film is formed on a rear face of a chip and a second metal film is formed on a surface of a ceramic substrate, and then both of them are made contact and heated so as to bond the chip and the ceramic substrate. Further, when the first metal film is formed, a slit portion which no first metal film exists is provided. When the bonding condition is evaluated, a resistance between two external connecting electrodes is measured.

Abstract: A method of fabricating an integrated circuit of which a bonding condition can be evaluated simply is provided. Two external connecting electrodes are provided on the surface, via holes are formed below them, and conductive portions are formed in the via holes. Then, a first metal film is formed on a rear face of a chip and a second metal film is formed on a surface of a ceramic substrate, and then both of them are made contact and heated so as to bond the chip and the ceramic substrate. Further, when the first metal film is formed, a slit portion which no first metal film exists is provided. When the bonding condition is evaluated, a resistance between two external connecting electrodes is measured.

Abstract: In a method of making a semiconductor device, an active layer and a heavily doped cap layer are formed in turn on a semiconductor substrate, a first electrode is formed on the cap layer, a mask of a two-layer structure is formed on the cap layer, with the mask having an insulating film pattern having a non-inverted tapered opening, and a resist pattern having an inverted tapered opening and continuous with the non-inverted tapered opening, these openings being separated by a predetermined distance from the first electrode, and then a recess is formed, by performing an isotropic etching of the heavily doped layer exposed in the openings, with the recess having a bottom surface and a side wall surface rising from an edge of the bottom surface toward the upper edge with a constant radium off curvature. An oblique vapor deposition is then performed to form a second electrode to cover the bottom surface and the part of the side wall surface.