Abstract: Provided is A piezoelectric element comprising a first electrode; a piezoelectric body layer provided on the first electrode, the piezoelectric body layer including 50 mol % or more of at least bismuth and iron, and the piezoelectric body layer having a current-time curve obtained by applying a voltage to the first electrode and the second electrode including a plurality of inflection points; and a second electrode provided on the piezoelectric body layer.

Abstract: A piezoelectric element equipped with a piezoelectric layer and an electrode provided on the piezoelectric layer, comprising the piezoelectric layer, which is made from a complex oxide having a perovskite structure containing Bi, Fe, Ba and Ti, and which has a residual stress of 250 MPa or more, and a method of manufacturing a liquid ejecting head equipped with a piezoelectric layer and an electrode provided on the piezoelectric layer, the method including forming the piezoelectric layer, which is made from a complex oxide having a perovskite structure containing Bi, Fe, Ba and Ti, and which has a residual stress of 250 MPa or more.

Abstract: A piezoelectric element is manufactured in a method including forming an adhesion layer of zirconium above a zirconium oxide insulating film, forming a first electrode above the adhesion layer, forming a piezoelectric layer of a complex oxide containing bismuth above the first electrode, and forming a second electrode above the piezoelectric layer.

Abstract: A liquid ejecting head includes a pressure generating chamber communicating with a nozzle aperture, and a piezoelectric element including a piezoelectric layer and electrodes that apply a voltage to the piezoelectric layer. The piezoelectric layer is made of a complex oxide having a perovskite structure. The piezoelectric layer contains bismuth, barium, iron and titanium. The piezoelectric layer has an intensity ratio of a (111) orientation intensity to a (100) orientation intensity of 3 or more.

Abstract: A piezoelectric element comprises a silicon oxide layer, an intermediate layer provided above the silicon oxide layer, a first electrode provided above the intermediate layer, a piezoelectric layer provided above the intermediate layer, and a second electrode provided above the piezoelectric layer. The piezoelectric layer is configured of a complex oxide having a perovskite structure and containing at least bismuth and iron. The intermediate layer contains magnesium oxide and/or aluminum oxide.

Abstract: A piezoelectric element comprising a piezoelectric layer containing bismuth, lanthanum iron manganese and titanium and a electrode formed above the piezoelectric layer.

Abstract: A liquid ejecting head includes a plate which is composed of a material containing silicon, a titanium oxide layer which is disposed above the plate, a bismuth-containing layer which is disposed above the titanium oxide layer and contains bismuth, a first electrode which is disposed above the bismuth-containing layer and composed of platinum, a piezoelectric layer which is disposed above the first electrode and composed of a piezoelectric material containing at least bismuth, and a second electrode which is disposed above the piezoelectric layer.

Abstract: A liquid ejecting head includes a plate which is composed of a material containing silicon, a titanium oxide layer which is disposed above the plate, a bismuth-containing layer which is disposed above the titanium oxide layer and contains bismuth, a first electrode which is disposed above the bismuth-containing layer and composed of platinum, a piezoelectric layer which is disposed above the first electrode and composed of a piezoelectric material containing at least bismuth, and a second electrode which is disposed above the piezoelectric layer.

Abstract: A method for manufacturing a piezoelectric element comprising forming a titanium film containing titanium; forming a platinum film containing platinum on the titanium film; forming a piezoelectric precursor film containing bismuth, lanthanum, iron and manganese on the platinum film; crystallizing the piezoelectric precursor film to form a piezoelectric layer by firing the piezoelectric precursor film in an atmosphere of an inert gas; and forming an electrode on the piezoelectric layer.

Abstract: A piezoelectric element comprising a first electrode, a piezoelectric layer which includes bismuth, lanthanum iron, and manganese and which formed above the first electrode and a second electrode formed above the piezoelectric layer. The integrated intensity of a diffraction peak observed at 20°<2?<25° is 90% or more of the sum of the integrated intensities of diffraction peaks observed at 20°<2?<50° in an X-ray powder diffraction pattern of the piezoelectric layer measured at ?=?=0°.

Abstract: A piezoelectric element comprising a first electrode, a piezoelectric layer containing bismuth lanthanum iron and manganese formed above the first electrode, and a second electrode formed above the piezoelectric layer. The piezoelectric layer contains crystals preferentially oriented in a (111) plane.

Abstract: There is provided a method of manufacturing a liquid ejecting head equipped with a piezoelectric layer and an electrode provided on the piezoelectric layer, the method including forming the piezoelectric layer, which is made from a complex oxide having a perovskite structure containing Bi, Fe, Ba and Ti, and which has a residual stress of 250 MPa or more.

Abstract: A ferroelectric capacitor includes: a ferroelectric film, and a lower electrode and an upper electrode interposing the ferroelectric film, wherein the ferroelectric film includes a first ferroelectric layer of ferroelectric material having a perovskite type crystal structure expressed by a general formula ABO3 formed by a metal organic chemical vapor deposition method, a second ferroelectric layer of ferroelectric material in which a part of B site element in ferroelectric material having a perovskite type crystal structure expressed by a general formula ABO3 is replaced with Nb, and a third ferroelectric layer of ferroelectric material having a perovskite type crystal structure expressed by a general formula ABO3 formed by a sol-gel method, which are sequentially laminated from the side of the lower electrode.

Abstract: A piezoelectric element is manufactured in a method including forming an adhesion layer of zirconium above a zirconium oxide insulating film, forming a first electrode above the adhesion layer, forming a piezoelectric layer of a complex oxide containing bismuth above the first electrode, and forming a second electrode above the piezoelectric layer.

Abstract: A piezoelectric element comprises a silicon oxide layer, an intermediate layer provided above the silicon oxide layer, a first electrode provided above the intermediate layer, a piezoelectric layer provided above the intermediate layer, and a second electrode provided above the piezoelectric layer. The piezoelectric layer is configured of a complex oxide having a perovskite structure and containing at least bismuth and iron. The intermediate layer contains magnesium oxide and/or aluminum oxide.

Abstract: A liquid ejecting head includes a pressure generating chamber communicating with a nozzle aperture, and a piezoelectric element including a piezoelectric layer and electrodes that apply a voltage to the piezoelectric layer. The piezoelectric layer is made of a complex oxide having a perovskite structure. The piezoelectric layer contains bismuth, barium, iron and titanium. The piezoelectric layer has an intensity ratio of a (111) orientation intensity to a (100) orientation intensity of 3 or more.

Abstract: A liquid ejecting head includes a plate which is composed of a material containing silicon, a titanium oxide layer which is disposed above the plate, a bismuth-containing layer which is disposed above the titanium oxide layer and contains bismuth, a first electrode which is disposed above the bismuth-containing layer and composed of platinum, a piezoelectric layer which is disposed above the first electrode and composed of a piezoelectric material containing at least bismuth, and a second electrode which is disposed above the piezoelectric layer.

Abstract: A piezoelectric element comprising a piezoelectric layer containing bismuth, lanthanum iron manganese and titanium and a electrode formed above the piezoelectric layer.

Abstract: A piezoelectric element comprising a first electrode, a piezoelectric layer which includes bismuth, lanthanum iron, and manganese and which formed above the first electrode and a second electrode formed above the piezoelectric layer. The integrated intensity of a diffraction peak observed at 20°<2?<25° is 90% or more of the sum of the integrated intensities of diffraction peaks observed at 20°<2?<50° in an X-ray powder diffraction pattern of the piezoelectric layer measured at ?=?=0°.

Abstract: A piezoelectric element comprising a first electrode, a piezoelectric layer containing bismuth lanthanum iron and manganese formed above the first electrode, and a second electrode formed above the piezoelectric layer. The piezoelectric layer contains crystals preferentially oriented in a (111) plane.