Abstract: An acoustic wave element 1 according to the present disclosure includes a piezoelectric substrate 2 and an IDT electrode 3 on the piezoelectric substrate 2. The IDT electrode 3 includes a multilayer structure of a first layer 35 comprised of Al containing 10% or less of a sub-component and a second layer 37 comprised of a CuAl2 alloy. The second layer 37 enables the acoustic wave element 1 to have excellent electric power resistance.

Abstract: An acoustic wave element 1 according to the present disclosure includes a piezoelectric substrate 2 and an IDT electrode 3 on the piezoelectric substrate 2. The IDT electrode 3 includes a multilayer structure of a first layer 35 comprised of Al containing 10% or less of a sub-component and a second layer 37 comprised of a CuAl2 alloy. The second layer 37 enables the acoustic wave element 1 to have excellent electric power resistance.

Abstract: An acoustic wave element 1 according to the present disclosure includes a piezoelectric substrate 2 and an IDT electrode 3 on the piezoelectric substrate 2. The IDT electrode 3 includes a multilayer structure of a first layer 35 comprised of Al containing 10% or less of a sub-component and a second layer 37 comprised of a CuAl2 alloy. The second layer 37 enables the acoustic wave element 1 to have excellent electric power resistance.

Abstract: An elastic wave element having a piezoelectric substrate equipped with a first main surface, and an excitation electrode arranged on the first main surface and having multiple electrode fingers, wherein, in a cross-sectional view in the direction orthogonal to the first main surface, the width of the electrode fingers at a first height at a distance from the first main surface is greater than the width at a second height located closest to the first main surface.

Abstract: A communication module includes a serial resonator of a transmission filter and an auxiliary resonator of a reception filter. Each of the serial resonator and the auxiliary resonator includes a piezoelectric substrate and a positive-side comb-shaped electrode and negative-side comb-shaped electrode meshing with each other. The positive-side comb-shaped electrode in the transmission filter and the negative-side comb-shaped electrode in the reception filter are connected to each other. The orientation from the positive-side comb-shaped electrode to the negative-side comb-shaped electrode relative to the crystal orientation of the piezoelectric substrate in the transmission filter and the orientation from the negative-side comb-shaped electrode to the positive-side comb-shaped electrode relative to the crystal orientation of the piezoelectric substrate in the reception filter are inverse to each other.

Abstract: A communication module includes a serial resonator of a transmission filter and an auxiliary resonator of a reception filter. Each of the serial resonator and the auxiliary resonator includes a piezoelectric substrate and a positive-side comb-shaped electrode and negative-side comb-shaped electrode meshing with each other. The positive-side comb-shaped electrode in the transmission filter and the negative-side comb-shaped electrode in the reception filter are connected to each other. The orientation from the positive-side comb-shaped electrode to the negative-side comb-shaped electrode relative to the crystal orientation of the piezoelectric substrate in the transmission filter and the orientation from the negative-side comb-shaped electrode to the positive-side comb-shaped electrode relative to the crystal orientation of the piezoelectric substrate in the reception filter are inverse to each other.

Abstract: A branching 1 filter has an antenna terminal 3 which receives signal waves and disturbance waves, a transmission filter 11 which is connected to the antenna terminal 3, a reception filter 13 which is connected to the antenna terminal 3 and receives a portion of the signal waves and has, as a passband, a frequency range higher than a passband of the transmission filter 11, and a disturbance wave resonator which is connected to the antenna terminal 3 and to the ground and positioned closer to the antenna terminal 3 side than the transmission filter 11 and the reception filter 13. The disturbance wave resonator 15 is connected to antenna terminal 3 at a position closer to the antenna terminal 3 side than the transmission filter 11 and the reception filter 13. A resonance frequency of the disturbance wave resonator 15 is within a frequency range smaller than the passband of the transmission filter and includes a frequency range of the disturbance waves.

Abstract: An elastic wave element having a piezoelectric substrate equipped with a first main surface, and an excitation electrode arranged on the first main surface and having multiple electrode fingers, wherein, in a cross-sectional view in the direction orthogonal to the first main surface, the width of the electrode fingers at a first height at a distance from the first main surface is greater than the width at a second height located closest to the first main surface.

Abstract: A SAW element has a substrate; an IDT electrode located on an upper surface of the substrate and comprises Al or an alloy containing Al; a first film located on an upper surface of the IDT electrode; and a protective layer which covers the IDT electrode provided with the first film and the portion of the substrate exposed from the IDT electrode, which has a thickness from the upper surface of the substrate larger than a total thickness of the IDT electrode and first film, and which contains a silicon oxide. The first film contains a material which has a larger acoustic impedance than the material (Al or the alloy containing Al) of the IDT electrode and the silicon oxide and which has a slower propagation velocity of an acoustic wave than the material of the IDT electrode and the silicon oxide.

Abstract: A branching 1 filter has an antenna terminal 3 which receives signal waves and disturbance waves, a transmission filter 11 which is connected to the antenna terminal 3, a reception filter 13 which is connected to the antenna terminal 3 and receives a portion of the signal waves and has, as a passband, a frequency range higher than a passband of the transmission filter 11, and a disturbance wave resonator which is connected to the antenna terminal 3 and to the ground and positioned closer to the antenna terminal 3 side than the transmission filter 11 and the reception filter 13. The disturbance wave resonator 15 is connected to antenna terminal 3 at a position closer to the antenna terminal 3 side than the transmission filter 11 and the reception filter 13. A resonance frequency of the disturbance wave resonator 15 is within a frequency range smaller than the passband of the transmission filter and includes a frequency range of the disturbance waves.

Abstract: A surface acoustic wave SAW (SAW) device has a substrate and a filter provided at the substrate. The filter has a plurality of interdigital transducers (IDT) electrodes arranged along a propagation direction of a SAW. Each of the plurality of IDT electrodes has an electrode finger group including a plurality of electrode fingers which extent in a direction orthogonal to the propagation direction and are arranged along the propagation direction. At least one of the plurality of IDT electrodes has a wide pitch section including an adjacent first and second electrode finger among the plurality of electrode fingers. The interval between the first electrode finger and the second electrode finger is larger than the average value of the intervals between the remaining electrode fingers of the plurality of electrode fingers.

Abstract: A SAW element has a substrate; an IDT electrode located on an upper surface of the substrate and comprises Al or an alloy containing Al; a first film located on an upper surface of the IDT electrode; and a protective layer which covers the IDT electrode provided with the first film and the portion of the substrate exposed from the IDT electrode, which has a thickness from the upper surface of the substrate larger than a total thickness of the IDT electrode and first film, and which contains a silicon oxide. The first film contains a material which has a larger acoustic impedance than the material (Al or the alloy containing Al) of the IDT electrode and the silicon oxide and which has a slower propagation velocity of an acoustic wave than the material of the IDT electrode and the silicon oxide.

Abstract: A SAW device 1 has a substrate 3 and a filter 9 provided at the substrate 3. The filter 9 has a plurality of IDT electrodes 15 arranged along a propagation direction of a SAW. Each of the plurality of IDT electrodes 15 has an electrode finger group including a plurality of electrode fingers 19f which extent in a direction orthogonal to the propagation direction and are arranged along the propagation direction. At least one of the plurality of IDT electrodes 15 has a wide pitch section 25 including an adjacent first and second electrode finger among the plurality of electrode fingers 19. The interval between the first electrode finger and the second electrode finger is larger than the average value of the intervals between the remaining electrode fingers of the plurality of electrode fingers 19f.