Patents by Inventor Masahito Asai

Masahito Asai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8178777
    Abstract: A solar cell attaining high efficiency in photoelectric conversion is provided. A method of manufacturing a solar cell having a grid electrode and a main electrode for external output of electric power from the grid electrode includes the steps of forming a small-width grid electrode on a light-receiving surface of a substrate having a pn junction by sintering a metal paste material, and forming a bar-shaped main electrode electrically connected to the grid electrode.
    Type: Grant
    Filed: August 31, 2004
    Date of Patent: May 15, 2012
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Masahito Asai
  • Publication number: 20050194037
    Abstract: A solar cell attaining high efficiency in photoelectric conversion is provided. A method of manufacturing a solar cell having a grid electrode and a main electrode for external output of electric power from the grid electrode includes the steps of forming a small-width grid electrode on a light-receiving surface of a substrate having a pn junction by sintering a metal paste material, and forming a bar-shaped main electrode electrically connected to the grid electrode.
    Type: Application
    Filed: August 31, 2004
    Publication date: September 8, 2005
    Applicant: Sharp Kabushiki Kaisha
    Inventor: Masahito Asai
  • Patent number: 5609694
    Abstract: A solar cell includes a first n.sup.+ type layer formed on the upper surface of a p type silicon substrate, a p type layer formed on the back surface of the substrate and having a dopant impurity concentration higher than that of the substrate, and a second n type layer formed at least on the edge face of the substrate so as to connect the first n type layer and the p type layer. The second n type layer has an impurity concentration lower than that of the first n.sup.+ layer proximate the region in contact with the p type layer.
    Type: Grant
    Filed: April 25, 1995
    Date of Patent: March 11, 1997
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Masahito Asai
  • Patent number: 5330583
    Abstract: A solar battery module according to the present invention includes interconnectors for series-connecting a plurality of solar battery cells, and one or more bypass diodes which allow output currents of the cells to be bypassed with respect to one or more cells, wherein each of those diodes is a chip shaped thin diode and is attached on an electrode or a cell or between interconnectors.
    Type: Grant
    Filed: September 28, 1992
    Date of Patent: July 19, 1994
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Masahito Asai, Shinichi Nakajima
  • Patent number: 5223044
    Abstract: A solar cell having a by-pass diode includes a second conductivity type layer and a second conductivity type well formed on the front surface of a first conductivity type semiconductor substrate, and a first conductivity type layer formed in a second conductivity type well. A comb-shaped front electrode is formed over the front surface of the substrate and includes a plurality of narrow grid fingers and a bus portion to which the grid fingers are connected. At least a part of the bus portion of the electrode covers the entire first conductivity type layer. A back electrode is formed on the back surface of the substrate. The first conductivity type substrate and the second conductivity type layer constitute the solar cell, and the second conductivity type well and the first conductivity type layer constitute the by-pass diode. The solar cell and the by-pass diode are electrically connected in parallel between the front electrode and the back electrode with their polarities being opposite to each other.
    Type: Grant
    Filed: November 5, 1991
    Date of Patent: June 29, 1993
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Masahito Asai
  • Patent number: 4737197
    Abstract: A solar cell including a semiconductor substrate, a diffused layer provided in the semiconductor substrate by diffusion of dopant impurities, and a contact made of metal paste formed on the diffusion layer. The metal paste includes metal powder which functions as the main contact material, glass frits, an organic binder, a solvent, and an element belonging to the fifth group of the periodic table.
    Type: Grant
    Filed: March 13, 1986
    Date of Patent: April 12, 1988
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Yoshiyuki Nagahara, Akira Shibata, Masahito Asai, Shinichi Nakajima, Nobuyuki Takamori