Patents by Inventor Masahito Ban

Masahito Ban has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma processing equipment
    Patent number: 6211622
    Abstract: A plurality of extracting orifices 42 for extracting the electron beam from a discharge portion 2 into a plasma process chamber 3 via a compartment 4 are provided radially. A plurality of accelerating electrodes 36, 37 are arranged in the process chamber 3. The electron extracting direction from the extracting orifices 42 is set in substantially parallel with an object surface 35. The number and the arrangement of the accelerating electrodes 36, 37 are set such that a density distribution of the excited plasma has an oprimal state for processing the object. The object having a large area can be processed appropriately.
    Type: Grant
    Filed: November 8, 1999
    Date of Patent: April 3, 2001
    Assignee: Kawasaki Jukogyo Kabushiki Kaisha
    Inventors: Makoto Ryoji, Takeshi Hasegawa, Masahito Ban, Yukitaka Mori
  • Electron-beam excited plasma generator with side orifices in the discharge chamber
    Patent number: 5942854
    Abstract: The present invention provides an electron-beam excited plasma generator which can effectively form samples of larger areas.
    Type: Grant
    Filed: June 4, 1998
    Date of Patent: August 24, 1999
    Assignee: Kawasaki Jukogyo Kabushiki Kaisha
    Inventors: Makoto Ryoji, Masakuni Tokai, Yukitaka Mori, Takeshi Hasegawa, Masahito Ban
  • Superconductive device manufacturing method
    Patent number: 5904861
    Abstract: A superconductive device manufacturing method is disclosed, which can prevent the characteristic deterioration on the processed surface, reduce the number of process steps, and thereby shorten the manufacturing time. The superconductive device manufacturing method comprises the steps of: forming a YBCO film (301) on a substrate (201); forming a mask pattern (302) on the formed YBCO film (301); and etching the YBCO film (301) by use of the formed mask pattern (302) and a plasma including at least oxygen plasma.
    Type: Grant
    Filed: March 25, 1996
    Date of Patent: May 18, 1999
    Assignees: International Superconductivity Technology Center, Kawasaki Jukogyo Kabushiki Kaisha, NEC Corporation
    Inventors: Masahito Ban, Tsuyoshi Takenaka, Katsumi Suzuki, Youichi Enomoto