Patents by Inventor Masahito Ishihara
Masahito Ishihara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10738380Abstract: A deposition apparatus includes a chamber, a holding unit configured to hold a substrate in the chamber, a driving unit configured to move the holding unit holding the substrate such that the substrate passes through a deposition area in the chamber, a deposition unit configured to form a film on the substrate passing through the deposition area by supplying a deposition material to the deposition area, and a cooling unit configured to cool the holding unit.Type: GrantFiled: April 6, 2017Date of Patent: August 11, 2020Assignee: CANON ANELVA CORPORATIONInventors: Naoyuki Nozawa, Nobuo Matsuki, Reiji Sakamoto, Masahito Ishihara
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Publication number: 20170211179Abstract: A deposition apparatus includes a chamber, a holding unit configured to hold a substrate in the chamber, a driving unit configured to move the holding unit holding the substrate such that the substrate passes through a deposition area in the chamber, a deposition unit configured to form a film on the substrate passing through the deposition area by supplying a deposition material to the deposition area, and a cooling unit configured to cool the holding unit.Type: ApplicationFiled: April 6, 2017Publication date: July 27, 2017Applicant: CANON ANELVA CORPORATIONInventors: Naoyuki NOZAWA, Nobuo MATSUKI, Reiji SAKAMOTO, Masahito ISHIHARA
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Patent number: 7848077Abstract: An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.Type: GrantFiled: October 28, 2009Date of Patent: December 7, 2010Assignee: Canon Anelva CorporationInventors: Shigeru Mizuno, Masahito Ishihara, Sunil Wickramanayaka, Naoki Miyazaki
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Patent number: 7791857Abstract: An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.Type: GrantFiled: December 30, 2008Date of Patent: September 7, 2010Assignee: Canon Anelva CorporationInventors: Shigeru Mizuno, Masahito Ishihara, Sunil Wickramanayaka, Naoki Miyazaki
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Patent number: 7724493Abstract: An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.Type: GrantFiled: October 22, 2008Date of Patent: May 25, 2010Assignee: Canon Anelva CorporationInventors: Shigeru Mizuno, Masahito Ishihara, Sunil Wickramanayaka, Naoki Miyazaki
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Publication number: 20100046134Abstract: An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.Type: ApplicationFiled: October 28, 2009Publication date: February 25, 2010Applicant: CANON ANELVA CORPORATIONInventors: Shigeru Mizuno, Masahito Ishihara, Sunil Wickramanayaka, Naoki Miyazaki
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Patent number: 7623334Abstract: An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.Type: GrantFiled: June 17, 2003Date of Patent: November 24, 2009Assignee: Canon Anelva CorporationInventors: Shigeru Mizuno, Masahito Ishihara, Sunil Wickramanayaka, Naoki Miyazaki
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Publication number: 20090229971Abstract: This application discloses a thin-film deposition apparatus comprising a vacuum chamber and a partition separating the inside of the vacuum chamber into two areas. A substrate is capable of passing through an inside opening provided in the partition. The inside opening is closed by a valve. A thin film is deposited onto the substrate in the first area. The substrate is heated by a heater in the second area prior to the deposition. The substrate is held by a holder in point contact while heated. A boosting-gas is introduced into the second area during the heating, thereby increasing pressure up to a viscous flow range. A pumping line evacuates the first area at a vacuum pressure all the time. The pumping line also evacuates the introduced boosting-gas from the second area to make the second area at a vacuum pressure when the valve is opened.Type: ApplicationFiled: April 10, 2009Publication date: September 17, 2009Applicant: CANON ANELVA CORPORATIONInventor: Masahito Ishihara
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Publication number: 20090122459Abstract: An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.Type: ApplicationFiled: December 30, 2008Publication date: May 14, 2009Applicant: ANELVA CORPORATIONInventors: Shigeru Mizuno, Masahito Ishihara, Sunil Wickramanayaka, Naoki Miyazaki
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Publication number: 20090059462Abstract: An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.Type: ApplicationFiled: October 22, 2008Publication date: March 5, 2009Applicant: ANELVA CORPORATIONInventors: Shigeru Mizuno, Masahito Ishihara, Sunil Wickramanayaka, Naoki Miyazaki
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Patent number: 7159537Abstract: A plasma processing system includes a reactor, a top electrode made of a magnetic or ferromagnetic metal or a metal-alloy, wherein a RF or DC power is applied to generate plasma within the reactor; a gas showerhead fixed to the top electrode; a sheet-like magnetic assembly bound to the upper surface of the gas showerhead, which includes a plurality of separate magnets, a metal sheet made of a ferromagnetic metal, and a deformable film.Type: GrantFiled: June 24, 2004Date of Patent: January 9, 2007Assignee: Anelva CorporationInventors: Sunil Wickramanayaka, Masahito Ishihara, Yoshikazu Nozaki, Hiroshi Doi
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Publication number: 20060158823Abstract: An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.Type: ApplicationFiled: March 9, 2006Publication date: July 20, 2006Applicant: ANELVA CORPORATIONInventors: Shigeru Mizuno, Masahito Ishihara, Sunil Wickramanayaka, Naoki Miyazaki
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Patent number: 7019263Abstract: This application discloses a substrate heating apparatus comprising a partition separating the inside of a load-lock chamber into two areas. An inside opening provided in the partition is closed by a partition valve, while the second area in which a substrate is transferred is evacuated at a vacuum pressure by a pumping line. After the partition valve is opened, a carrier carries the substrate through the inside opening, thereby contacting the substrate onto a heat body disposed in the first area. Otherwise, after the partition valve is opened, a carrier carries a heat body through the inside opening, thereby contacting the substrate onto the heat body in the second area. This application also discloses a substrate processing system comprising a transfer chamber, and a load-lock chamber and a process chamber both provided on the periphery of the transfer chamber.Type: GrantFiled: August 26, 2004Date of Patent: March 28, 2006Assignee: Anelva CorporationInventor: Masahito Ishihara
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Publication number: 20050045616Abstract: This application discloses a substrate heating apparatus comprising a partition separating the inside of a load-lock chamber into two areas. An inside opening provided in the partition is closed by a partition valve, while the second area in which a substrate is transferred is evacuated at a vacuum pressure by a pumping line. After the partition valve is opened, a carrier carries the substrate through the inside opening, thereby contacting the substrate onto a heat body disposed in the first area. Otherwise, after the partition valve is opened, a carrier carries a heat body through the inside opening, thereby contacting the substrate onto the heat body in the second area. This application also discloses a substrate processing system comprising a transfer chamber, and a load-lock chamber and a process chamber both provided on the periphery of the transfer chamber.Type: ApplicationFiled: August 26, 2004Publication date: March 3, 2005Inventor: Masahito Ishihara
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Publication number: 20050045101Abstract: This application discloses a thin-film deposition apparatus comprising a vacuum chamber and a partition separating the inside of the vacuum chamber into two areas. A substrate is capable of passing through an inside opening provided in the partition. The inside opening is closed by a valve. A thin film is deposited onto the substrate in the first area. The substrate is heated by a heater in the second area prior to the deposition. The substrate is held by a holder in point contact while heated. A boosting-gas is introduced into the second area during the heating, thereby increasing pressure up to a viscous flow range. A pumping line evacuates the first area at a vacuum pressure all the time. The pumping line also evacuates the introduced boosting-gas from the second area to make the second area at a vacuum pressure when the valve is opened.Type: ApplicationFiled: August 26, 2004Publication date: March 3, 2005Inventor: Masahito Ishihara
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Publication number: 20050028935Abstract: A plasma processing system includes a reactor, a top electrode made of a magnetic or ferromagnetic metal or a metal-alloy, wherein a RF or DC power is applied to generate plasma within the reactor; a gas showerhead fixed to the top electrode; a sheet-like magnetic assembly bound to the upper surface of the gas showerhead, which includes a plurality of separate magnets, a metal sheet made of a ferromagnetic metal, and a deformable film.Type: ApplicationFiled: June 24, 2004Publication date: February 10, 2005Applicant: ANELVA CorporationInventors: Sunil Wickramanayaka, Masahito Ishihara, Yoshikazu Nozaki, Hiroshi Doi
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Publication number: 20040040665Abstract: An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.Type: ApplicationFiled: June 17, 2003Publication date: March 4, 2004Applicant: ANELVA CorporationInventors: Shigeru Mizuno, Masahito Ishihara, Sunil Wickramanayaka, Naoki Miyazaki
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Publication number: 20010052392Abstract: A multichamber substrate processing apparatus in which substrates are always positioned accurately at set positions inside a process chamber is a practical apparatus that affords excellent productivity while occupying little space. A heating chamber 6 for heating a substrate Sb before a film is deposited in a sputtering chamber 8 and a CVD chamber 9 is provided with an alignment means for performing center alignment whereby the position of the center of the substrate Sb is calculated and the substrate is centered over a preset position, and for performing circumferential alignment whereby the circumferential position of the substrate Sb is calculated and this circumferential position is aligned with a preset position.Type: ApplicationFiled: December 23, 1998Publication date: December 20, 2001Inventors: MASAHIKO NAKAMURA, YUKIHITO TASHIRO, MASAHITO ISHIHARA, NOBUYUKI TAKAHASHI
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Patent number: 6129046Abstract: The present invention provides a substrate processing apparatus having improved temperature distribution on a block heater and improved productivity. The substrate processing apparatus includes a reactor having an exhaust unit to form a vacuum environment therein for processing a surface of a substrate, a support member provided in the reactor, and gas introduction units for introducing reactive gases into the reactor, the substrate support member including a block heater. The block heater has upper, intermediate and lower members, which are placed one over another, the faying surfaces of the respective members being joined by diffusion bonding. A heating member is provided between the intermediate and lower members, and purge gas passages are formed between the intermediate and upper members.Type: GrantFiled: February 4, 1997Date of Patent: October 10, 2000Assignee: Anelva CorporationInventors: Shigeru Mizuno, Masahito Ishihara, Kazuhito Watanabe, Nobuyuki Takahashi
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Patent number: 6070552Abstract: A substrate processing device includes a reactor equipped with a substrate holder and a gas feed electrode facing the substrate holder, a pump mechanism for pumping out an interior of the reactor, a reaction gas feed mechanism for introducing a reaction gas through the gas feed electrode into the interior of said reactor, a high frequency power source for applying a high frequency power to said gas feed electrode, a connecting port formed in a sidewall of said reactor, the pump mechanism is connected to the connecting port formed in the sidewall of the reactor, and a space between the gas feed electrode and the substrate holder is set so that a conductance between the gas feed electrode and the substrate holder is lower than a conductance between the sidewall of the reactor and the gas feed electrode.Type: GrantFiled: February 12, 1998Date of Patent: June 6, 2000Assignee: Anelva CorporationInventors: Shigeru Mizuno, Masahito Ishihara, Yoichiro Numasawa, Nobuyuki Takahashi