Abstract: A semiconductor light-emitting device containing as first and second semiconductor layers a semiconductor of Cd.sub.x Zn.sub.1-x S.sub.y Se.sub.1-y (0<x.ltoreq.1, 0.ltoreq.y.ltoreq.1) and as an active layer a semiconductor of Cd.sub.x Zn.sub.1-x S.sub.y Se.sub.1-y (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) formed between the first and second semiconductor layers, if necessary sandwiching the active layer with a pair of light guiding layers, can emit a blue laser light excellent in properties and high in reliability.

Abstract: A semiconductor emitting device is provided which is capable of emitting a blue light and, which comprises a double hetero junction structure having first clad layer, an active layer and a second clad layer, successively formed on a semiconductor substrate. First and second electrodes are respectively formed on the first and second clad layers. ZnSSe thin films of low-resistivity are preferably used as the first and/or clad second layers, while a ZnSTe film can be used as the active layer.

Abstract: A semiconductor emitting device is provided which is capable of emitting a blue light. The device includes a first clad layer, an active layer and a second clad layer, successively formed on a semiconductor substrate. A nitrogen-doped p-type ZnSSe thin film of low-resistivity having a carrier concentration of not less than 1.times.10.sup.16 cm.sup.-3 and a resistivity of not more than 10 .OMEGA.-cm is used as the first clad layer or the second clad layer.

Abstract: Strained-layer superlattices are formed on a substrate by alternately and epitaxially laminating a plurality of first compound semiconductor layers each of which is composed of a II-Vi compound semiconductor and second compound semiconductor layers each of which is composed of a II-VI or III-V compound semiconductor having a smaller lattice constant than the compound semiconductor of the first compound semiconductor layer. A first conduction type impurity diffusion region is formed in at least each layer surface of the first compound semiconductor layers, and a second conduction type region is so formed as to be adjacent to the first conduction type impurity diffusion region directly or through an undoped region. Electrodes are provided on the end side surfaces of the respective regions. The thus-obtained compound semiconductor light emitting device efficiently emits light in the visible region including green to blue wavelength region.

Abstract: A method of growing zinc chalcogenide in an atmosphere which contains the vapor of di-.pi.-cyclopentadienyl manganese or di-.pi.-alkyl cyclopentadienyl manganese that serves as a source of manganese. By growing zinc chalcogenide in the above atmosphere, there is obtained a manganese-doped zinc chalcogenide having a very high crystal quality, which is very suitable for the active layer in light emitting devices.

Abstract: A semiconductor optical apparatus of the invention has a quantum well super-lattice structure essentially of only direct transition semiconductor or comprising a direct transition semiconductor and an indirect transiton semiconductor. In the semiconductor optical apparatus of the invention, by using an absorption saturation phenomenon of excitions in the direct transition semiconductor constructing the quantum well super-lattice structure, a non-volatile information recording apparatus which can record, reproduce, and erase information at a high speed even at the room temperature or even by irradiating a light of a low intensity is realized.

Abstract: A multi-color single layer electroluminescent display apparatus comprising a illuminant layer having been interposed between a pair of electrode layers and having a plurality of activators doped at spatially different locations is disclosed. A process for producing an electroluminescent display apparatus comprising doping with a plurality of activators at spatially different locations on forming a illuminant layer is also disclosed.