Abstract: A growth layer is uniformly grown on a substrate which is mounted on a susceptor. With a lower plate of the susceptor, at the outer periphery of a substrate mounting part, an outer periphery projection part, which is higher than the substrate mounting part, is formed around the substrate mounting part. Therefore, the substrate mounting part provides a bottom face of a recessed part formed within the lower plate, the substrate being mounted in this recessed part. In other words, the lower plate is provided with such a geometry that the substrate is fitted into the recessed part surrounded by the outer periphery projection part.

Abstract: An object of the present invention is to provide a Group III nitride semiconductor epitaxial substrate, a Group III nitride semiconductor element, and a Group III nitride semiconductor free-standing substrate, which have good crystallinity, with not only AlGaN, GaN, and GaInN the growth temperature of which is 1050° C. or less, but also with AlxGa1-xN having a high Al composition, the growth temperature of which is high; a Group III nitride semiconductor growth substrate used for producing these, and a method for efficiently producing those. The present invention provides a Group III nitride semiconductor growth substrate comprising a crystal growth substrate including a surface portion composed of a Group III nitride semiconductor which contains at least Al, and a scandium nitride film formed on the surface portion are provided.

Abstract: An object of the present invention is to address the problems described herein and to provide a III-nitride semiconductor epitaxial substrate, a III-nitride semiconductor element, and a III-nitride semiconductor freestanding substrate, which have good crystallinity, not only with AlGaN, GaN, or GaInN, the growth temperature of which is at or below 1050° C., but also with AlxGa1-xN, the growth temperature of which is high and which has a high Al composition, as well as a III-nitride semiconductor growth substrate for fabricating these and a method for efficiently fabricating these. The invention is characterized by being equipped with: a crystal growth substrate, at least the surface portion of which substrate includes a III-nitride semiconductor containing Al; and a single metallic layer formed on the surface portion, the single metallic layer being made from Zr or Hf.

Abstract: An object of the present invention is to provide a Group III nitride semiconductor epitaxial substrate, a Group III nitride semiconductor element, and a Group III nitride semiconductor free-standing substrate, which have good crystallinity, with not only AlGaN, GaN, and GaInN the growth temperature of which is 1050° C. or less, but also with AlxGa1-xN having a high Al composition, the growth temperature of which is high; a Group III nitride semiconductor growth substrate used for producing these, and a method for efficiently producing those. The present invention provides a Group III nitride semiconductor growth substrate comprising a crystal growth substrate including a surface portion composed of a Group III nitride semiconductor which contains at least Al, and a scandium nitride film formed on the surface portion are provided.

Abstract: A device (1) for containing and dispensing tablets, wherein vial bottles (3) filled with tablets wait in waiting spaces (701a, b, c) and the vial bottles (3) are taken out from the waiting spaces (701a, b, c). A plurality of pairs of holding members (703a, b) facing each other for holding the bodies of the vial bottles (3) are installed in the waiting spaces (701a, b, c). Also, stock sensors (710) in the same quantity as the pair of holding members (703a, b) are installed to check for each pair of holding members whether a vial bottle is held on the pair of holding members (703a, b) or not.

Abstract: An object of the present invention is to address the problems described herein and to provide a III-nitride semiconductor epitaxial substrate, a III-nitride semiconductor element, and a III-nitride semiconductor freestanding substrate, which have good crystallinity, not only with AlGaN, GaN, or GaInN, the growth temperature of which is at or below 1050° C., but also with AlxGa1-xN, the growth temperature of which is high and which has a high Al composition, as well as a III-nitride semiconductor growth substrate for fabricating these and a method for efficiently fabricating these. The invention is characterized by being equipped with: a crystal growth substrate, at least the surface portion of which substrate includes a III-nitride semiconductor containing Al; and a single metallic layer formed on the surface portion, the single metallic layer being made from Zr or Hf.

Abstract: A medicine storing and dispensing apparatus includes: a cap container (501) storing a plurality of caps (2) for closing openings of vial bottles (3) and having a plurality of slits (508) formed on the bottom surface thereof; a plurality of cap stirring members (502) protruding from a rotating shaft (509) and extending inside a cap container (501) through the slits (508); and a cap pathway (503) which continues to the cap container (501), has a clearance allowing only one cap (2) to pass through, and which is inclined downward so as to align the passing caps (2).

Abstract: A vial supply apparatus comprises: a vial supply part having a plurality of storage portions which store vials having different heights according to size, each storage portion comprising a rotatable endless member disposed at a predetermined interval from a partition wall, partitioning members disposed at predetermined intervals on the endless member, endless member driving means, and a supply port for dispensing a vial stored between adjacent partitioning members; a chute portion for dropping the vial dispensed from the supply port such that an opening of the vial faces upward; a robot arm for holding the vial supplied from the chute portion; and an adjustment table disposed below the robot arm, for adjusting an opening height of the vial supplied from the chute portion in accordance with the height of the vial.

Abstract: A compact tablet storage and take-out apparatus capable of quickly discharging and filing tablets. The tablet storage and take-out apparatus includes: a cylindrical drum; a drum driving device; a plurality of tablet cassette mounting bases fitted to an outer surface of the drum; tablet cassettes which are detachably mounted on the tablet cassette mounting bases; and a guide passage for guiding discharged tablets inside the drum. Moreover, the apparatus includes a transfer robot provided inside the drum so as to be liftable and also rotatable. The transfer robot is operable to transfers a vial between a delivery position located outside an opening formed in an upper end or a lower end of the drum and a tablet filling position. The position of at least one of the drum and the transfer robot is controlled so that an opening of the vial held by the transfer robot agrees with an outlet of the guide passage.

Abstract: A vial supply apparatus comprises: a vial supply part having a plurality of storage portions which store vials having different heights according to size, each storage portion comprising a rotatable endless member disposed at a predetermined interval from a partition wall, partitioning members disposed at predetermined intervals on the endless member, endless member driving means, and a supply port for dispensing a vial stored between adjacent partitioning members; a chute portion for dropping the vial dispensed from the supply port such that an opening of the vial faces upward; a robot arm for holding the vial supplied from the chute portion; and an adjustment table disposed below the robot arm, for adjusting an opening height of the vial supplied from the chute portion in accordance with the height of the vial.

Abstract: A device (1) for containing and dispensing tablets, wherein vial bottles (3) filled with tablets wait in waiting spaces (701a, b, c) and the vial bottles (3) are taken out from the waiting spaces (701a, b, c). A plurality of pair of holding members (703a, b) facing each other for holding the bodies of the vial bottles (3) are installed in the waiting spaces (701a, b, c), and stock sensors (710) of the same quantity as the pair of holding members (703a, b) are installed to check for each pair of holding members whether the vial bottles are held on the pair of holding members (703a, b) or not.

Abstract: The present invention provides a compact tablet storage and take-out apparatus capable of quickly discharging and filing tablets. The tablet storage and take-out apparatus includes: a cylindrical drum; drum driving means; a plurality of tablet cassette mounting bases (341) which are fitted to an outer surface of the drum; tablet cassettes which are detachably mounted on the tablet cassette mounting bases; and a guide passage which guides inside the drum tablets discharged from the tablet cassettes. Moreover, the apparatus includes: a transfer robot which is provided inside the drum so as to be liftable and also rotatable, and which transfers the vial held by arms between a delivery position located outside an opening formed in an upper end or a lower end of the drum and a tablet filling position where the tablets discharged through the guide passage are filled.

Abstract: A medicine storing and dispensing apparatus includes: a cap container 501 storing a plurality of caps 2 for closing openings of vial bottles 3 and having a plurality of slits 508 formed on the bottom surface thereof; a plurality of cap stirring members 511 formed in a rotating shaft 509 in the state of protruding inside the cap container 501 through-each of the slits 508; a cap stirring member 502 for steering the caps 2 by the stirring sections 510 through rotational driving; and a cap pathway 503 which continues to the cap container 501, has a clearance allowing only one cap 2 to pass through, and which is inclined downward so as to align the passing caps 2.

Abstract: A substrate for film growth of group III nitride, a method of manufacturing the same, and a semiconductor device using the same are provided which can make an AlN thin film relatively thin without cloudiness, as well as cracks and pits are reduced in a group III nitride thin film layer constituting the device grown thereon. A substrate 10 for film growth of group III nitride is constituted which includes a substrate material 11 and an AlN thin film 12 formed on said substrate as a buffer layer, and a semiconductor device comprising group III nitride thin film is formed thereon, and the AlN thin film is formed at plural steps at least one of which changes film growth conditions during the film growth.