Abstract: Method for slicing a workpiece, including measuring a crystal axis orientation while holding a workpiece with a workpiece holder, setting the workpiece holder to a wire saw in such a manner that the measured crystal axis orientation is maintained, then adjusting a sliced plane orientation, pressing the workpiece against a wire row to slice the workpiece; the workpiece holder includes a portion slidable while holding the workpiece and a portion for fixing the slide portion, after measuring the crystal axis orientation, sliding the slide portion to move to the workpiece holder center in a manner that the measured crystal axis orientation is maintained, fixing the slide portion, setting the workpiece holder to the wire saw, then adjusting the sliced plane orientation, and slicing the workpiece. This enables an orientation measurement without limitation of distance between an orientation measuring instrument and plane to be measured can inhibit warpage deterioration and workpiece breakage.

Abstract: Method for slicing a workpiece, including measuring a crystal axis orientation while holding a workpiece with a workpiece holder, setting the workpiece holder to a wire saw in such a manner that the measured crystal axis orientation is maintained, then adjusting a sliced plane orientation, pressing the workpiece against a wire row to slice the workpiece; the workpiece holder includes a portion slidable while holding the workpiece and a portion for fixing the slide portion, after measuring the crystal axis orientation, sliding the slide portion to move to the workpiece holder center in a manner that the measured crystal axis orientation is maintained, fixing the slide portion, setting the workpiece holder to the wire saw, then adjusting the sliced plane orientation, and slicing the workpiece. This enables an orientation measurement without limitation of distance between an orientation measuring instrument and plane to be measured can inhibit warpage deterioration and workpiece breakage.

Abstract: There is provided a method for processing a semiconductor wafer subjected to a chamfering process, a lapping process, an etching process, and a mirror-polishing process, wherein acid etching is performed after alkaline etching as the etching process, and the acid etching is performed with an acid etchant composed of hydrofluoric acid, nitric acid, phosphoric acid, and water, a method for processing a semiconductor wafer subjected to a chamfering process, a surface grinding process, an etching process, and a mirror-polishing process, wherein the etching process is performed as described above, and a method for processing a semiconductor wafer subjected to a flattening process, an etching process, and a mirror-polishing process, wherein the etching process is performed as described above, a back surface polishing process is performed after the acid etching as the mirror-polishing process, and then a front surface polishing process is performed.

Abstract: There is provided a method for processing a semiconductor wafer subjected to a chamfering process, a lapping process, an etching process, and a mirror-polishing process, wherein acid etching is performed after alkaline etching as the etching process, and the acid etching is performed with an acid etchant composed of hydrofluoric acid, nitric acid, phosphoric acid, and water, a method for processing a semiconductor wafer subjected to a chamfering process, a surface grinding process, an etching process, and a mirror-polishing process, wherein the etching process is performed as described above, and a method for processing a semiconductor wafer subjected to a flattening process, an etching process, and a mirror-polishing process, wherein the etching process is performed as described above, a back surface polishing process is performed after the acid etching as the mirror-polishing process, and then a front surface polishing process is performed.