Patents by Inventor Masahito Takusagawa

Masahito Takusagawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4329660
    Abstract: In a semiconductor light emitting device, a buried layer of a semiconductor is selectively formed in at least one of a first and a second clad layers in order to determine a light emitting region by the configuration of the buried layer of the semiconductor. The buried layer of the semiconductor has a conductivity type which is opposite to the conductivity type of the surrounding clad layer and an index of refraction which is different from the index of refraction of the surrounding clad layer.
    Type: Grant
    Filed: February 11, 1980
    Date of Patent: May 11, 1982
    Assignee: Fijitsu Limited
    Inventors: Mitsuhiro Yano, Hiroshi Nishi, Masahito Takusagawa, Yorimitsu Nishitani