Abstract: The purpose of this disclosure is to provide an etching method. This method includes: (a) providing a substrate on a substrate support in a chamber, the substrate including a silicon-containing film and a mask on the silicon-containing film, the silicon-containing film including silicon and nitrogen; (b) supplying a process gas to the chamber, the process gas containing a hydrogen fluoride gas and a chlorine-containing gas, where a flow rate of the chlorine-containing gas is 1.5 volume % or more of a total flow of the process gas excluding an inert gas; and (c) generating a plasma from the process gas to etch the silicon-containing film.

Abstract: An etching method includes (a) providing a substrate having a first silicon containing film and a second silicon containing film including at least a silicon containing film of which type is different from the first silicon containing film, on a substrate support in a chamber, (b) supplying a processing gas including a HF gas and a phosphorus containing gas into the chamber, and (c) etching the first silicon containing film and the second silicon containing film by generating plasma from the processing gas in the chamber by a source RF signal and generating a bias potential on the substrate by a bias signal.

Abstract: A method for classifying data executed by a computer includes obtaining a plurality of data groups, each of the data groups including a plurality of data items about detected intensities being associated with physical index values, respectively; and classifying, based on identification information of each of the data groups and the physical index values, the data items included in the data groups into a plurality of clusters.

Abstract: An LNG receiving structure of the present invention is provided with a leader pipe (1) that is placed underneath a receiving pipe (102) that penetrates a roof of an LNG tank, and that extends to a bottom end of the LNG tank. This LNG receiving structure employs a structure in which the cross-sectional area of the leader pipe is set greater than the cross-sectional area of the receiving pipe. According to this LNG receiving structure, it is possible to minimize the risk that rollover will occur when a plurality of types of LNG that each have mutually different densities are accumulated in the same LNG tank. It is also possible to suppress remixing of the gas when the LNG is received into the LNG tank.

Abstract: An infrared detector including a reflection portion which transmits far- and middle-infrared rays and which reflects near-infrared and visible rays; a photo-current generating portion having a plurality of layered quantum dot structures in each of which electrons are excited by the far- and middle-infrared rays having passed through the reflection portion so as to generate photo-current; a light emitting portion having a plurality of layered quantum well structures into each of which electrons of the photo-current generated by the photo-current generating portion are injected and in each of which the electrons thus injected thereinto are recombined with holes so as to emit near-infrared and visible rays; and a photo-detecting portion which detects the near -infrared and visible rays emitted from the light emitting portion and which detects the near-infrared and visible rays emitted from the light emitting portion and then reflected by the reflection portion.

Abstract: An infrared detector comprises: a reflection portion transmitting far- and middle-infrared rays and reflecting near-infrared and visible rays; a photo-current generating portion having a quantum well structure in which electrons are excited by the far- and middle-infrared rays having passed through the reflection portion so as to generate photo-current; a light emitting portion having a quantum well structure into which electrons of the photo-current generated by the photo-current generating portion are injected and the electrons thus injected thereinto are recombined with holes, thus emitting near-infrared and visible rays; and a photo-detecting portion detecting the near-infrared and visible rays emitted from the light emitting portion, and detecting the near-infrared and visible rays emitted from the light emitting portion and reflected by the reflection portion.

Abstract: An infrared detector comprises: a reflection portion which transmits far- and middle-infrared rays and which reflects near-infrared and visible rays; a photo-current generating portion having a plurality of layered quantum dot structures in each of which electrons are excited by the far- and middle-infrared rays having passed through the reflection portion so as to generate photo-current; a light emitting portion having a plurality of layered quantum well structures into each of which electrons of the photo-current generated by the photo-current generating portion are injected and in each of which the electrons thus injected thereinto are recombined with holes so as to emit near-infrared and visible rays; and a photo-detecting portion which detects the near-infrared and visible rays emitted from the light emitting portion and which detects the near-infrared and visible rays emitted from the light emitting portion and then reflected by the reflection portion.

Abstract: A method of processing a volatile organic compound is provided, wherein a volatile organic compound contained in gas to be treated is adsorbed in an adsorbent; the thus-adsorbed volatile organic compound is desorbed with the aid of steam and mixed in the steam; and the steam containing the volatile organic compound is combusted. This method further includes: separating a vessel for the adsorption and desorption into an inner side room and an outer side room by means of a separation member part of which is formed of the adsorbent; thermally retaining the vessel for the adsorption and desorption; at the time of adsorption, supplying the gas to be treated to the inner side room and therefrom to the outer side room; and at the time of desorption, supplying the steam to the outer side room and therefrom to the inner side room.

Abstract: An infrared detector comprises: a reflection portion transmitting far- and middle-infrared rays and reflecting near-infrared and visible rays; a photo-current generating portion having a quantum well structure in which electrons are excited by the far- and middle-infrared rays having passed through the reflection portion so as to generate photo-current; a light emitting portion having a quantum well structure into which electrons of the photo-current generated by the photo-current generating portion are injected and the electrons thus injected thereinto are recombined with holes, thus emitting near-infrared and visible rays; and a photo-detecting portion detecting the near-infrared and visible rays emitted from the light emitting portion, and detecting the near-infrared and visible rays emitted from the light emitting portion and reflected by the reflection portion.

Abstract: An infrared detector comprises: a reflection portion transmitting far- and middle-infrared rays and reflecting near-infrared and visible rays; a photo-current generating portion having a quantum well structure in which electrons are excited by the far- and middle-infrared rays having passed through the reflection portion so as to generate photo-current; a light emitting portion having a quantum well structure into which electrons of the photo-current generated by the photo-current generating portion are injected and the electrons thus injected thereinto are recombined with holes, thus emitting near-infrared and visible rays; and a photo-detecting portion detecting the near-infrared and visible rays emitted from the light emitting portion, and detecting the near-infrared and visible rays emitted from the light emitting portion and reflected by the reflection portion.

Abstract: A method of processing a volatile organic compound is provided, wherein a volatile organic compound contained in gas to be treated is adsorbed in an adsorbent; the thus-adsorbed volatile organic compound is desorbed with the aid of steam and mixed in the steam; and the steam containing the volatile organic compound is combusted. This method further includes: separating a vessel for the adsorption and desorption into an inner side room and an outer side room by means of a separation member part of which is formed of the adsorbent; thermally retaining the vessel for the adsorption and desorption; at the time of adsorption, supplying the gas to be treated to the inner side room and therefrom to the outer side room; and at the time of desorption, supplying the steam to the outer side room and therefrom to the inner side room.

Abstract: A semiconductor laser device includes a substrate and an n-GaN layer composed of a nitride semiconductor formed on the substrate. The substrate includes a trench having as a slope a plane inclined 62 degrees from the main plane of the substrate, or a plane inclined within 3 degrees in an arbitrary direction from the inclined plane. The n-GaN layer is formed on the slope. On the n-GaN layer are formed a lower clad layer, an active layer, and an upper clad layer, each composed of a nitride semiconductor. The active layer has a plane orientation substantially matching the plane orientation of the main plane.

Abstract: A method for producing a semiconductor light emitting device includes the steps of forming a mask layer having a plurality of openings on a surface of a silicon substrate; and forming a column-like multi-layer structure including a light emitting layer in each of the plurality of openings with nitride semiconductor materials. A width between two adjacent openings of the plurality of openings of the mask layer is 10 &mgr;m or less.

Abstract: A method for producing a semiconductor light emitting device includes the steps of forming a mask layer having a plurality of openings on a surface of a silicon substrate; and forming a column-like multi-layer structure including a light emitting layer in each of the plurality of openings with nitride semiconductor materials. A width between two adjacent openings of the plurality of openings of the mask layer is 10 &mgr;m or less.

Abstract: A semiconductor laser device includes a substrate and an n-GaN layer composed of a nitride semiconductor formed on the substrate. The substrate includes a trench having as a slope a plane inclined 62 degrees from the main plane of the substrate, or a plane inclined within 3 degrees in an arbitrary direction from the inclined plane. The n-GaN layer is formed on the slope. On the n-GaN layer are formed a lower clad layer, an active layer, and an upper clad layer, each composed of a nitride semiconductor. The active layer has a plane orientation substantially matching the plane orientation of the main plane.

Abstract: The dimension ratio t/H of the thickness t of a flexure spring to the height (thickness) H of a slider 17 is set at 0.047 or less in order to reduce the variation in crown amount due to a temperature variation. As the ratio of the thickness t of the flexure spring to the height H of the slider decreases, the stress acting in the slider due to a difference in linear expansion coefficient between itself and the flexure spring decreases and the rigidity of the slider increases relative to the flexure spring. The dimension ratio H/L of the height H of the slider to the length L thereof is set at 0.245 or more. As the dimension ratio H/L increases, the rigidity of the slider increases and the amount of deformation of the slider due to a difference in linear expansion coefficient between itself and the flexure spring decreases. In addition, the ratio A2/A1 of an actual adhesion area A2 between the slider and a slider fixing portion of the flexure spring to a possible adhesion area A1 therebetween is reduced to 0.