Patents by Inventor Masaji Sakamura
Masaji Sakamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8277560Abstract: A CVD apparatus cleaning method that efficiently removes by-product such as SiO2 or Si3N4 adhered to and deposited on surfaces of an inner wall, an electrode, and the like in a reaction chamber at a film forming step. In the cleaning method the discharged cleaning gas amount is very small, environmental influences such as global warming can be lessened, and cost can be reduced. A CVD apparatus supplying reactive gas into a reaction chamber and forming a deposited film on a surface of a base material provided in the reaction chamber includes an exhaust gas recycling path recycling an exhaust gas reaching the reaction chamber from downstream of a pump on an exhaust path for exhausting a gas from an inner part of the reaction chamber through the pump.Type: GrantFiled: March 19, 2003Date of Patent: October 2, 2012Assignees: National Institute of Advanced Industrial Science and Technology, Canon Anelva Corporation, Ulvac, Inc., Kanto Denka Kogyo Co., Ltd., Sanyo Electric Co., Ltd., Showa Denko K.K., Sony Corporation, Tokyo Eectron Limited, Hitachi Kokusai Electric Inc., Panasonic Corporation, Mitsubishi Denki Kabushiki Kaisha, Renesas Electronics CorporationInventors: Katsuo Sakai, Seiji Okura, Masaji Sakamura, Kaoru Abe, Hitoshi Murata, Etsuo Wani, Kenji Kameda, Yuki Mitsui, Yutaka Ohira, Taisuke Yonemura, Akira Sekiya
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Patent number: 8043438Abstract: An apparatus for cleaning a CVD apparatus that can efficiently remove a by-product such as SiO2 or Si3N4 stuck and deposited onto the surface of an internal wall, an electrode, or the like in a reaction chamber in a film forming process, and a method for cleaning a CVD apparatus. A control monitors luminous intensity data of an F radical in a reaction chamber by optical emission spectroscopy and compares the data with calibrated prestored luminous intensity data, and ends cleaning after a predetermined time passes from reaching a luminous intensity saturation point. Furthermore, concentration data of SiF4 in a gas discharged from the reaction chamber are monitored by a Fourier transform infrared spectrometry and compared with prestored concentration data of SiF4 to decide that the predetermined time has passed when a predetermined cleaning end point concentration is reached, thereby ending the cleaning.Type: GrantFiled: March 12, 2004Date of Patent: October 25, 2011Assignees: National Institute of Advanced Industrial Science and Technology, Canon Anelva Corporation, Ulvac, Inc., Sanyo Electric Co., Ltd., Sony Corporation, Tokyo Electron Limited, Hitachi Kokusai Electric Inc., Renesas Electronics Corporation, Fujitsu Semiconductor LimitedInventors: Katsuo Sakai, Kaoru Abe, Seiji Okura, Masaji Sakamura, Hitoshi Murata, Kenji Kameda, Etsuo Wani, Akira Sekiya
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Publication number: 20060207630Abstract: An apparatus for cleaning a CVD apparatus that can efficiently remove a by-product such as SiO2 or Si3N4 stuck and deposited onto the surface of an internal wall, an electrode, or the like in a reaction chamber in a film forming process, and a method for cleaning a CVD apparatus. A control monitors luminous intensity data of an F radical in a reaction chamber by optical emission spectroscopy and compares the data with calibrated prestored luminous intensity data, and ends cleaning after a predetermined time passes from reaching a luminous intensity saturation point. Furthermore, concentration data of SiF4 in a gas discharged from the reaction chamber are monitored by a Fourier transform infrared spectrometry and compared with prestored concentration data of SiF4 to decide that the predetermined time has passed when a predetermined cleaning end point concentration is reached, thereby ending the cleaning.Type: ApplicationFiled: March 12, 2004Publication date: September 21, 2006Applicants: RESEARCH INST. OF INNOVATIVE TECH. FOR THE EARTH, National Inst. of Adv. Industrial Sci. and TechInventors: Katsuo Sakai, Kaoru Abe, Seiji Okura, Masaji Sakamura, Hitoshi Murata, Kenji Kameda, Etsuo Wani, Akira Sekiya
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Publication number: 20060201533Abstract: There is provided a CVD apparatus capable of efficiently removing a by-product such as SiO2 or Si3N4 which is stuck and deposited onto the surface of an internal wall, an electrode or the like in a CVD chamber in a film forming process, and furthermore, executing cleaning having a small damage over an upper electrode and a counter electrode stage (a lower electrode) and manufacturing a thin film of high quality, and a CVD apparatus cleaning method using the same. In a CVD apparatus cleaning method of introducing a cleaning gas to carry out plasma cleaning over an inside of a CVD chamber after forming a deposited film on a surface of a substrate, a frequency of an RF to be applied to an RF electrode is switched into a first frequency to be applied for forming a film and a second frequency to be applied when executing the plasma cleaning.Type: ApplicationFiled: March 12, 2004Publication date: September 14, 2006Applicant: RESEARCH INST. OF INNOVATIVE TECH. FOR THE EARTHInventors: Etsuo Wani, Katsuo Sakai, Seiji Okura, Masaji Sakamura, Kaoru Abe, Hitoshi Murata, Kenji Kameda
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Publication number: 20050252451Abstract: It is an object to provide a cleaning method in a CVD apparatus capable of efficiently removing a by-product such as SiO2 or Si3N4 which is adhered to and deposited on the surfaces of an inner wall, an electrode and the like in a reaction chamber at a film forming step. Furthermore, it is an object to provide a cleaning method in which the amount of a cleaning gas to be discharged is very small, an influence on an environment such as global warming is also lessened and a cost can also be reduced. An energy is applied to a fluorine compound to react the fluorine compound, thereby generating a fluorine gas component and a component other than the fluorine gas component. Furthermore, the fluorine gas component and the component other than the fluorine gas component which are generated are separated from each other so that the fluorine gas component is separated and refined.Type: ApplicationFiled: March 13, 2003Publication date: November 17, 2005Inventors: Tatsuro Beppu, Katsuo Sakai, Seiji Okura, Masaji Sakamura, Kaoru Abe, Hitoshi Murata, Etsuo Wani, Kenji Kameda, Yuki Mitsui, Yutaka Ohira, Taisuke Yonemura, Akira Sekiya
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Publication number: 20040255854Abstract: It is an object to provide a cleaning method in a CVD apparatus capable of efficiently removing a by-product such as SiO2 or Si3N4 which is adhered to and deposited on the surfaces of an inner wall, an electrode and the like in a reaction chamber and the side wall of a piping of an exhaust path or the like at a film forming step, in which the amount of a cleaning gas to be discharged is very small, an influence on an environment such as global warming can also be lessened and a cost can also be reduced.Type: ApplicationFiled: April 27, 2004Publication date: December 23, 2004Inventors: Katsuo Sakai, Seiji Okura, Masaji Sakamura, Kaoru Abe, Hitoshi Murata, Etsuo Wani, Kenji Kameda, Yuki Mitsui, Yutada Ohira, Taisuke Yonemura, Akira Sekiya
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Publication number: 20040250775Abstract: It is an object to provide a cleaning method in a CVD apparatus capable of efficiently removing a by-product such as SiO2 or Si3N4 which is adhered to and deposited on the surfaces of an inner wall, an electrode and the like in a reaction chamber at a film forming step, in which the amount of a cleaning gas to be discharged is very small, an influence on an environment such as global warming is also lessened and a cost can also be reduced.Type: ApplicationFiled: April 27, 2004Publication date: December 16, 2004Inventors: Katsuo Sakai, Seiji Okura, Masaji Sakamura, Kaoru Abe, Hitoshi Murata, Etsuo Wani, Kenji Kameda, Yuki Mitsui, Yutaka Ohira, Taisuke Yonemura, Akira Sekiya
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Patent number: 6274489Abstract: A first convex portion and a second convex portion are formed on a semiconductor substrate at a prescribed interval, an impurity diffusing region is formed on an upper portion of the semiconductor substrate placed between the first and second convex portions, and a thinned first polysilicon film is formed on the impurity diffusing region and the first and second convex portions. Thereafter, arsenic ions are implanted into the first polysilicon film to make the first polysilicon film conductive. Thereafter, a second polysilicon film having a film thickness larger than that of the first polysilicon film is formed, and phosphorus ions are implanted into the second polysilicon film to make the second polysilicon film conductive. Thereafter, a tungsten silicide film is formed on the second polysilicon film, and the tungsten silicide film and the first and second polysilicon films are patterned.Type: GrantFiled: March 2, 1998Date of Patent: August 14, 2001Assignee: Sanyo Electric Co., Ltd.Inventors: Masahiro Ono, Masaji Sakamura, Toshiharu Matsuda
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Patent number: 5792695Abstract: A first convex portion and a second convex portion are formed on a semiconductor substrate at a prescribed interval, an impurity diffusing region is formed on an upper portion of the semiconductor substrate placed between the first and second convex portions, and a thinned first polysilicon film is formed on the impurity diffusing region and the first and second convex portions. Thereafter, arsenic ions are implanted into the first polysilicon film to make the first polysilicon film conductive. Thereafter, a second polysilicon film having a film thickness larger than that of the first polysilicon film is formed, and phosphorus ions are implanted into the second polysilicon film to make the second polysilicon film conductive. Thereafter, a tungsten silicide film is formed on the second polysilicon film, and the tungsten silicide film and the first and second polysilicon films are patterned.Type: GrantFiled: May 30, 1997Date of Patent: August 11, 1998Assignee: Sanyo Electric Co., Ltd.Inventors: Masahiro Ono, Masaji Sakamura, Toshiharu Matsuda