Patents by Inventor Masakasu Katsuno

Masakasu Katsuno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • EPITAXIAL SILICON CARBIDE MONOCRYSTALLINE SUBSTRATE AND METHOD OF PRODUCTION OF SAME
    Publication number: 20150075422
    Abstract: The present invention provides an epitaxial SiC monocrystalline substrate having a high quality epitaxial film suppressed in occurrence of step bunching in epitaxial growth using a substrate with an off angle of 6° or less and a method of production of the same, that is, an epitaxial silicon carbide monocrystalline substrate comprised of a silicon carbide monocrystalline substrate with an off angle of 6° or less on which a silicon carbide monocrystalline thin film is formed, the epitaxial silicon carbide monocrystalline substrate characterized in that the silicon carbide monocrystalline thin film has a surface with a surface roughness (Ra value) of 0.5 nm or less and a method of production of the same.
    Type: Application
    Filed: November 19, 2014
    Publication date: March 19, 2015
    Inventors: Takashi Aigo, Hiroshi Tsuge, Taizo Hoshino, Tatsuo Fujimoto, Masakasu Katsuno, Masashi Nakabayashi, Hirokatsu Yashiro
  • Epitaxial silicon carbide monocrystalline substrate and method of production of same
    Publication number: 20110278596
    Abstract: The present invention provides an epitaxial SiC monocrystalline substrate having a high quality epitaxial film suppressed in occurrence of step bunching in epitaxial growth using a substrate with an off angle of 6° or less and a method of production of the same, that is, an epitaxial silicon carbide monocrystalline substrate comprised of a silicon carbide monocrystalline substrate with an off angle of 6° or less on which a silicon carbide monocrystalline thin film is formed, the epitaxial silicon carbide monocrystalline substrate characterized in that the silicon carbide monocrystalline thin film has a surface with a surface roughness (Ra value) of 0.5 nm or less and a method of production of the same.
    Type: Application
    Filed: January 29, 2010
    Publication date: November 17, 2011
    Inventors: Takashi Aigo, Hiroshi Tsuge, Taizo Hoshino, Tatsuo Fujimoto, Masakasu Katsuno, Masashi Nakabayashi, Hirokatsu Yashiro