Patents by Inventor Masakatsu Hamaji

Masakatsu Hamaji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7473624
    Abstract: There is provided a method for manufacturing the semiconductor device for obtaining capacitance characteristics of a larger capacitance and delay characteristics with higher efficiency. An embodiment according to the present invention employs the configuration of forming the gate polysilicon layer by conducting the customization by using the customized reticle. For example, gate polysilicon layer having a larger dimension such as gate length and the like is formed by using the dedicated gate reticle, only for an user who requests the countermeasure for the EMI noise. Having such process, a larger-scale capacitance can be provided without increasing the process cost.
    Type: Grant
    Filed: March 14, 2005
    Date of Patent: January 6, 2009
    Assignee: NEC Electronics Corporation
    Inventor: Masakatsu Hamaji
  • Publication number: 20050208743
    Abstract: There is provided a method for manufacturing the semiconductor device for obtaining capacitance characteristics of a larger capacitance and delay characteristics with higher efficiency. An embodiment according to the present invention employs the configuration of forming the gate polysilicon layer by conducting the customization by using the customized reticle. For example, gate polysilicon layer having a larger dimension such as gate length and the like is formed by using the dedicated gate reticle, only for an user who requests the countermeasure for the EMI noise. Having such process, a larger-scale capacitance can be provided without increasing the process cost.
    Type: Application
    Filed: March 14, 2005
    Publication date: September 22, 2005
    Applicant: NEC ELECTRONICS CORPORATION
    Inventor: Masakatsu Hamaji