Abstract: A mounting table is provided. The mounting table includes a base having a first flow path, a recess, and a second flow path connected to the recess, and a variable control mechanism configured to variably control a contact area between a target object disposed on the base and a mounting surface for mounting thereon the target object by filling and discharging fluid into and from the recess through the second flow path.

Abstract: A plasma processing apparatus according to one aspect includes a chamber body providing a chamber, the chamber body including a side wall, an opening being formed on the side wall, a stage provided in the chamber, a ceiling facing the stage, a gas supply system configured to supply a processing gas to the chamber, a power supply configured to supply electric power, and a wall that forms a processing space having a volume smaller than a volume of the chamber in the chamber. At least a part of the wall is movable between a position overlapping with a transport path extending between the processing space and the opening and a position not overlapping with the transport path, and the wall forms the processing space when the at least a part of the wall is disposed at the position overlapping with the transport path.

Abstract: A stage includes: a substrate mounting member having a mounting surface on which a target substrate is mounted; a support member configured to support the substrate mounting member; a refrigerant flow path formed inside the support member along the mounting surface, and including a ceiling surface disposed on the mounting surface side, a bottom surface opposite to the ceiling surface, and an introduction port for introducing a refrigerant formed on the bottom surface; and a heat insulating member including at least a first planar portion covering a portion of the ceiling surface, which faces the introduction port, and a second planar portion covering an inner side surface of a curved portion of the refrigerant flow path.

Abstract: A mounting table is provided. The mounting table includes a base having a first flow path, a recess, and a second flow path connected to the recess, and a variable control mechanism configured to variably control a contact area between a target object disposed on the base and a mounting surface for mounting thereon the target object by filling and discharging fluid into and from the recess through the second flow path.

Abstract: A plasma processing apparatus according to one aspect includes a chamber body providing a chamber, the chamber body including a side wall, an opening being formed on the side wall, a stage provided in the chamber, a ceiling facing the stage, a gas supply system configured to supply a processing gas to the chamber, a power supply configured to supply electric power, and a wall that forms a processing space having a volume smaller than a volume of the chamber in the chamber. At least a part of the wall is movable between a position overlapping with a transport path extending between the processing space and the opening and a position not overlapping with the transport path, and the wall forms the processing space when the at least a part of the wall is disposed at the position overlapping with the transport path.