Abstract: An object of the present disclosure is to provide a common mode noise filter that can be used in a high-frequency band. The common mode noise filter of the present disclosure includes first to fifth insulator layers and stacked body in which first to fifth insulator layers are stacked along a vertical direction. The common mode noise filter further includes first spiral conductor and second spiral conductor that are formed inside stacked body and face each other across first insulator layer. The common mode noise filter further includes first pad connected to an inner end of first spiral conductor and second pad connected to an inner end of second spiral conductor. Neither first pad nor second pad overlaps each of first spiral conductor and second spiral conductor in top view.

Abstract: A common mode noise filter includes an insulating layer, a first coil conductor disposed on a first surface of the insulating layer and extending slenderly, and a second coil conductor disposed on a second surface of the insulating layer and extending slenderly. The second coil conductor faces the first coil conductor across the insulating layer. A portion of the second coil conductor has a cross section crossing a direction in which the portion of the second coil conductor extends slenderly. The cross section includes an apex portion facing the first coil conductor across the insulating layer and a base side portion opposite to the apex portion. A width of the apex portion is smaller than a width of the base-side portion. The common mode noise filter reduces attenuation of differential signals in high frequencies.

Abstract: A common mode noise filter includes a laminated body having insulator layers therein and first and second spiral conductors provided on layer planes different from each other. The first spiral conductor includes a first spiral conductor line, a first pad provided at an outer end of the first spiral conductor line, and a second pad provided at an inner end of the first spiral conductor line. The second spiral conductor includes a second spiral conductor line, a third pad provided at an outer end of the second spiral conductor line, and a fourth pad provided at an inner end of the second spiral conductor line. The first spiral conductor line faces the second spiral conductor line. Each of the second pad and the sixth pad overlaps none of the fourth pad and the eighth pad viewing from above.

Abstract: A common mode noise filter includes first to fourth insulator layers stacked in a stacking direction and first to third coils provided on the first to fourth insulator layers independently of one another. The first coil includes a first coil conductor provided on the first insulator layer and a second coil conductor provided on the fourth insulator layer and connected to the first coil conductor. The second coil is provided on the second insulator layer. The third coil is provided on the third insulator layer. The first coil conductor overlaps the second coil viewing from above. At least a part of the second coil overlaps at least a part of the third coil viewing from above. The second coil conductor overlaps the third coil viewing from above.

Abstract: A common mode noise filter includes a laminated body having insulator layers therein and first and second spiral conductors provided on layer planes different from each other. The first spiral conductor includes a first spiral conductor line, a first pad provided at an outer end of the first spiral conductor line, and a second pad provided at an inner end of the first spiral conductor line. The second spiral conductor includes a second spiral conductor line, a third pad provided at an outer end of the second spiral conductor line, and a fourth pad provided at an inner end of the second spiral conductor line. The first spiral conductor line faces the second spiral conductor line. Each of the second pad and the sixth pad overlaps none of the fourth pad and the eighth pad viewing from above.

Abstract: A common mode noise filter includes first to fourth insulator layers stacked in a stacking direction and first to third coils provided on the first to fourth insulator layers independently of one another. The first coil includes a first coil conductor provided on the first insulator layer and a second coil conductor provided on the fourth insulator layer and connected to the first coil conductor. The second coil is provided on the second insulator layer. The third coil is provided on the third insulator layer. The first coil conductor overlaps the second coil viewing from above. At least a part of the second coil overlaps at least a part of the third coil viewing from above. The second coil conductor overlaps the third coil viewing from above.

Abstract: A pair of thick first electrodes (2) are formed on an upper surface of alumina substrate (1) are formed with material having a low specific resistance. Thin second electrodes (3) that are positioned between first electrodes (2) and made of material having a high melting point are formed in a thin state. A gap (4) is formed between the second electrodes (3). First electrodes (2) forming connection electrodes are prevented from producing heat and protected from damage. The width of the gap between second electrodes (3) is narrow and accurate. This provides an electrostatic discharge (ESD) protector that is resistant to repetitive application of static electricity, reduces a peak voltage, and has a stable characteristic suppressing electrostatic discharge.

Abstract: An electrostatic discharge protection device of a semiconductor integrated circuit, comprising a first diffusion layer that is a diffusion layer of a second conductivity type provided on a semiconductor substrate of a first conductivity type and serves as a collector, a second diffusion layer that is a diffusion layer of the first conductivity type provided in the first diffusion layer and serves as a base, a third diffusion layer that is a diffusion layer of the second conductivity type provided in the second diffusion layer and serves as an emitter, a collector contact region provided in the first diffusion layer, a fourth diffusion layer that is a diffusion layer of the second conductivity type provided in the first diffusion layer in a downward region of the collector contact region in a substrate-thickness direction, wherein the fourth diffusion layer is formed shallower in a depth than that of the first diffusion layer in the substrate-thickness direction, deeper in a depth than that of the second diffu

Abstract: A semiconductor device includes an output pad and a surge absorption unit formed above a semiconductor region of a first conductivity type. The surge absorption unit includes: a semiconductor island region of a second conductivity type; a buried layer of the second conductivity type formed between a bottom of the semiconductor island region of the second conductivity type and the semiconductor region of the first conductivity type; a dopant layer of the first conductivity type formed in an upper portion of the semiconductor island region of the second conductivity type and connected to have the same potential as the semiconductor region of the first conductivity type; a dopant layer of the second conductivity type formed in an upper portion of the dopant layer of the first conductivity type and electrically connected to the output pad; and a ring layer of the second conductivity type surrounding the dopant layer of the first conductivity type and reaching the buried layer of the second conductivity type.

Abstract: An electrostatic protective element of the present invention comprises: a second-conductive-type and lightly-doped first diffusion layer to be a collector, which is formed to be in contact with a first conductive type semiconductor substrate; a first-conductive-type second diffusion layer to be a base, which is formed on the first diffusion layer; a second-conductive-type third diffusion layer to be an emitter, which is formed on the second diffusion layer, wherein the bottom face of the first diffusion layer is in contact with the semiconductor substrate. Further, the electrostatic protective element comprises a second-conductive-type and heavily-doped fourth diffusion layer, which is formed deeper than the second diffusion layer in a contact area of the first diffusion layer.

Abstract: A semiconductor device includes an output pad and a surge absorption unit formed above a semiconductor region of a first conductivity type. The surge absorption unit includes: a semiconductor island region of a second conductivity type; a buried layer of the second conductivity type formed between a bottom of the semiconductor island region of the second conductivity type and the semiconductor region of the first conductivity type; a dopant layer of the first conductivity type formed in an upper portion of the semiconductor island region of the second conductivity type and connected to have the same potential as the semiconductor region of the first conductivity type; a dopant layer of the second conductivity type formed in an upper portion of the dopant layer of the first conductivity type and electrically connected to the output pad; and a ring layer of the second conductivity type surrounding the dopant layer of the first conductivity type and reaching the buried layer of the second conductivity type.