Patents by Inventor Masakatsu Okada

Masakatsu Okada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6165263
    Abstract: A method for growing a single crystal by allowing a seed crystal to contact a molten zone formed by melting a polycrystalline material, followed by moving the molten zone away from the seed, wherein the oxygen concentration in the atmosphere during growth of the single crystal is lower than about 10% by volume.
    Type: Grant
    Filed: March 5, 1999
    Date of Patent: December 26, 2000
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Takenori Sekijima, Takashi Fujii, Kikuo Wakino, Masakatsu Okada
  • Patent number: 6063304
    Abstract: The present invention provides a cerium-containing magnetic garnet single crystal having a size large enough to use as a material for optical communication of an isolator and for an electronic device, and a production method therefor. The cerium-containing magnetic garnet single crystal of the present invention is obtained by melting a cerium-containing magnetic garnet polycrystal while applying a sharp, large temperature gradient to the solid-liquid interface of the melt and the solid, and then solidifying the melted polycrystal. The polycrystal is preferably heated by using an optical heating device, for example, a combination of a main heating device using a laser beam, and an auxiliary heating device using reflected light from a halogen lamp.
    Type: Grant
    Filed: January 27, 1999
    Date of Patent: May 16, 2000
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Takashi Fujii, Takenori Sekijima, Kikuo Wakino, Masakatsu Okada
  • Patent number: 6039802
    Abstract: There is provided a single crystal growth method which allows single crystal of an incongruent melting compound to be grown stable while controlling its growth orientation. The single crystal growth method comprises the steps of: holding polycrystal and seed crystal within a heating furnace; joining the polycrystal with the seed crystal; heating the polycrystal on the side opposite from the side where the polycrystal is joined with the seed crystal to form a melt zone; moving the melt zone to the side where the polycrystal is joined with the seed crystal so that the melt zone is in contact with the seed crystal to allow seeding; and growing single crystal by moving the melt zone which has been in contact with the seed crystal and been seeded to the opposite side from the side where the polycrystal is joined with the seed crystal.
    Type: Grant
    Filed: March 5, 1998
    Date of Patent: March 21, 2000
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Takenori Sekijima, Takashi Fujii, Kikuo Wakino, Masakatsu Okada
  • Patent number: 6033470
    Abstract: The present invention provides a cerium-containing magnetic garnet single crystal having a size large enough to use as a material for optical communication of an isolator and for an electronic device, and a production method therefor. The cerium-containing magnetic garnet single crystal of the present invention is obtained by melting a cerium-containing magnetic garnet polycrystal while applying a sharp, large temperature gradient to the solid-liquid interface of the melt and the solid, and then solidifying the melted polycrystal. The polycrystal is preferably heated by using an optical heating device, for example, a combination of a main heating device using a laser beam, and an auxiliary heating device using reflected light from a halogen lamp.
    Type: Grant
    Filed: March 21, 1997
    Date of Patent: March 7, 2000
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Takashi Fujii, Takenori Sekijima, Kikuo Wakino, Masakatsu Okada