Patents by Inventor Masakatsu Saitoh

Masakatsu Saitoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6662659
    Abstract: A microminiature and thin semiconductor acceleration sensor with high sensitivity is provided. The acceleration sensor has a mass portion formed in a center part of a silicon semiconductor substrate, a frame formed at a perimeter portion of the substrate, thin elastic support arms, which are provided at upper part of the mass portion and the frame and connect the mass portion and the frame, and a plurality of pairs of piezoresistors disposed on top surface sides of the elastic support arms. At least one of the mass portion and the thick frame has a cross section vertical to a respective top surface, spreading in width from the respective top surface toward a respective bottom surface. Since a side length of the mass portion and/or a width of the frame at a site, where the elastic support arms each is connected, are made short, the elastic support arm is made long, hereby the sensitivity of the sensor is enhanced.
    Type: Grant
    Filed: February 4, 2003
    Date of Patent: December 16, 2003
    Assignee: Hitachi Metals, Ltd.
    Inventor: Masakatsu Saitoh
  • Publication number: 20030177832
    Abstract: An ultra-small and slim semiconductor acceleration sensor with high sensitivity is provided. The acceleration sensor has a mass portion formed at a center part of a silicon semiconductor substrate, a frame formed on an edge part of the substrate, thin elastic support arms which are provided on top surfaces of the mass portion and the frame and connect the mass portion and the frame, and strain gauges constituted by a plurality of pairs of piezoresistors formed on top surfaces of the elastic support arms. A distance between a pair of Z-axis strain gauges provided on the top surface of the elastic support arm is made longer by 0.4L to 1.2L or shorter by 1.0L to 1.8L than a distance between a pair of X-axis strain gauges, whereby output of the Z-axis strain gauge is made at the same level as output of the X-axis strain gauge.
    Type: Application
    Filed: March 11, 2003
    Publication date: September 25, 2003
    Applicant: HITACHI METALS, LTD.
    Inventors: Hiroyuki Hatano, Masakatsu Saitoh, Sinji Furuichi
  • Publication number: 20030150269
    Abstract: A microminiature and thin semiconductor acceleration sensor with high sensitivity is provided. The acceleration sensor has a mass portion formed in a center part of a silicon semiconductor substrate, a frame formed at a perimeter portion of the substrate, thin elastic support arms, which are provided at upper part of the mass portion and the frame and connect the mass portion and the frame, and a plurality of pairs of piezoresistors disposed on top surface sides of the elastic support arms. At least one of the mass portion and the thick frame has a cross section vertical to a respective top surface, spreading in width from the respective top surface toward a respective bottom surface. Since a side length of the mass portion and/or a width of the frame at a site, where the elastic support arms each is connected, are made short, the elastic support arm is made long, hereby the sensitivity of the sensor is enhanced.
    Type: Application
    Filed: February 4, 2003
    Publication date: August 14, 2003
    Applicant: HITACHI METALS, LTD.
    Inventor: Masakatsu Saitoh
  • Publication number: 20030057447
    Abstract: A microminiature and thin semiconductor acceleration sensor with high sensitivity is provided. The acceleration sensor has a mass portion formed in a center part of a silicon semiconductor substrate, a frame formed at a perimeter portion of the substrate, thin elastic support arms, which are provided at upper part of the mass portion and the frame and connect the mass portion and the frame, and a plurality of pairs of piezoresistors disposed on top surface sides of the elastic support arms. In the mass portion, a plurality of recessed portions which are recessed toward a center thereof from a perimeter thereof are formed, each of the elastic support arms is attached to the top surface of the mass portion at the bottom of each of the recessed portions, and sides of the elastic support arms are spaced from sides of the recessed portions. Since the volume of the mass portion and the length of the elastic support arms can be independently made large, sensitivity can be made higher.
    Type: Application
    Filed: September 16, 2002
    Publication date: March 27, 2003
    Applicant: HITACHI METALS, LTD.
    Inventors: Masakatsu Saitoh, Shigenori Tanaka, Yoshio Ikeda
  • Patent number: 4832457
    Abstract: A multipanel liquid crystal display device and a method of manufacturing such a device is disclosed. The liquid crystal display device comprises two or four panels of square shape each including a first plate of square shape. These two or four first plates are disposed in such a positional relation that at least two orthogonally crossing sides of each of the plates are not adjoined by any one of the remaining plates thereby forming a planar assembly lying in the plane. One of the major surfaces of each of the first plates provides a display region except marginal edges adjacent to the at least two orthogonally crossing sides not adjoined by any one of the remaining plates, and picture element electrodes arranged in a matrix pattern are previously provided on this display region. Further, in each first plate, electrode lead-out terminals connected to the respective picture element electrodes are previously disposed along the marginal edges adjacent to the two sides described above.
    Type: Grant
    Filed: February 16, 1988
    Date of Patent: May 23, 1989
    Assignee: Hitachi, Ltd.
    Inventors: Masakatsu Saitoh, Yuko Kumisawa, Jun Yamada, Kohzoh Satoh