Patents by Inventor Masakatsu Tsuchiaki
Masakatsu Tsuchiaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9093504Abstract: A semiconductor device is manufactured by forming, on an insulating base material, a first support element having a side face that extends from a surface of the insulating base material, forming a coating of amorphous silicon on the side face of the first support element, filling an aperture disposed between the first support element and a second support element that extends from a surface of the insulating base material with an insulating film, planarizing the insulating film to expose an exposed portion of the coating and a surface of the first support element, and siliciding the amorphous silicon of the coating to form an interconnect.Type: GrantFiled: March 7, 2013Date of Patent: July 28, 2015Assignee: Kabushiki Kaisha ToshibaInventor: Masakatsu Tsuchiaki
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Publication number: 20130320543Abstract: A semiconductor device is manufactured by forming, on an insulating base material, a first support element having a side face that extends from a surface of the insulating base material, forming a coating of amorphous silicon on the side face of the first support element, filling an aperture disposed between the first support element and a second support element that extends from a surface of the insulating base material with an insulating film, planarizing the insulating film to expose an exposed portion of the coating and a surface of the first support element, and siliciding the amorphous silicon of the coating to form an interconnect.Type: ApplicationFiled: March 7, 2013Publication date: December 5, 2013Applicant: KABUSHIKI KAISHA TOSHIBAInventor: Masakatsu TSUCHIAKI
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Patent number: 7939869Abstract: A semiconductor device includes: a first source region and a first drain region formed at a distance from each other in a semiconductor substrate; a first gate insulating film formed on the semiconductor substrate between the first source region and the first drain region; a first gate electrode formed on the first gate insulating film; a first source electrode formed above the first source region and including a ferromagnetic layer having an easy axis of magnetization in a first direction; a first drain electrode formed above the first drain region and including a ferromagnetic layer magnetized in a second direction at an angle larger than 0 degrees but not larger than 180 degrees with respect to the first direction; and a second drain electrode formed above the first drain region, being located at a distance from the first drain electrode, and including a ferromagnetic layer magnetized in a direction substantially antiparallel to the second direction.Type: GrantFiled: September 19, 2008Date of Patent: May 10, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Masakatsu Tsuchiaki, Yoshiaki Saito
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Patent number: 7919813Abstract: Disclosed is a semiconductor device of n-type MOSFET structure, which comprises a semiconductor substrate having a device isolation region, diffusion regions formed in the semiconductor substrate, gate electrodes formed above the semiconductor substrate, and a F-containing NiSi layer formed on the diffusion regions and containing F atoms at a concentration of 3.0×1013 cm?2 or more in areal density, wherein a depth from the junction position formed between the diffusion region and the semiconductor substrate to the bottom of the F-containing NiSi layer is confined within the range of 20 to 100 nm, and the concentration of F atoms at an interface between the F-containing NiSi layer and the semiconductor substrate is 8.0×1018 cm?3 or more.Type: GrantFiled: October 23, 2009Date of Patent: April 5, 2011Assignee: Kabushiki Kaisha ToshibaInventor: Masakatsu Tsuchiaki
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Patent number: 7786538Abstract: A semiconductor device includes: a first MOSFET including: first source and drain regions formed at a distance from each other in a first semiconductor region; a first insulating film formed on the first semiconductor region between the first source region and the first drain region; a first gate electrode formed on the first insulating film; a first sidewall insulating film formed at side portions of the first gate electrode; a first single-crystal silicon layer formed on each of the first source and drain regions, and having at least an upper-face made of a {111} plane; a first NiSi layer formed at least on the first single-crystal silicon layer, and having a portion whose interface with the first single-crystal silicon is on the {111} plane of the first single-crystal silicon layer and a part of the portion of the first NiSi layer being in contact with the first sidewall insulating film; and a first TiN film being in contact with the portion of the first NiSi layer on the {111} plane of the first single-crType: GrantFiled: June 26, 2008Date of Patent: August 31, 2010Assignee: Kabushiki Kaisha ToshibaInventor: Masakatsu Tsuchiaki
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Patent number: 7755114Abstract: A semiconductor device includes a semiconductor substrate, a monocrystalline channel region of a first conductivity type formed on the surface of the semiconductor substrate, a gate electrode formed on the channel region via a gate insulating film, a pair of source/drain electrodes of a second conductivity type provided on both sides of the gate electrode, metallic compound layers formed on the source/drain electrodes, stress application layers located under the respective source and drain electrodes and each having a crystal structure whose intrinsic lattice spacing is different from lattice spacing inherent in a substance constituting the source/drain electrodes, and first buried insulating regions disposed under the respective stress application layers.Type: GrantFiled: January 24, 2006Date of Patent: July 13, 2010Assignee: Kabushiki Kaisha ToshibaInventor: Masakatsu Tsuchiaki
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Patent number: 7732875Abstract: A method of fabricating a semiconductor device having a pair of shallow silicided source and drain junctions with minimal leakage is disclosed. The semiconductor device typically has a MISFET structure with NiSi regions partially making up the source and drain regions. The fabrication method includes the steps of providing silicon surfaces having Si{110} crystal planes on both sides of this gate electrode and forming a plurality of nickel silicide (NiSi) regions, each having a rectangular planar shape whose shorter sides being equal or less than 0.5 ?m in length and running along a Si<100> direction.Type: GrantFiled: December 13, 2007Date of Patent: June 8, 2010Assignee: Kabushiki Kaisha ToshibaInventor: Masakatsu Tsuchiaki
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Patent number: 7701017Abstract: A MOS semiconductor device includes a substrate having a first region with a Si(110) surface and a second region with a Si(100) surface, a p-channel MOSFET formed in the first region, and an n-channel MOSFET formed in the second region. The p-channel MOSFET including a first silicide layer formed on source/drain regions, and containing N atoms at an areal density of 8.5×1013 to 8.5×1014 cm?2, and F atoms at an areal density of less than 5.0×1012 cm?2. The n-channel MOSFET including a second silicide layer formed on a source/drain regions, and containing F atoms at an areal density of not less than 5.0×1013 cm?2.Type: GrantFiled: February 13, 2007Date of Patent: April 20, 2010Assignee: Kabushiki Kaisha ToshibaInventor: Masakatsu Tsuchiaki
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Patent number: 7696575Abstract: A semiconductor device of complementary structure with increased carrier mobilities of both polarities by applying orientation-dependent mechanical stresses to their respective semiconductor channel regions, comprises a semiconductor region subjected to compressive stress in a first direction along a surface and tensile stress in a second direction different from the first direction, a field effect transistor of a first conductivity type formed in the semiconductor region and including source and drain regions separately arranged along the first direction and a field effect transistor of a second conductivity type formed in the semiconductor region and including source and drain regions separately arranged along the second direction.Type: GrantFiled: January 30, 2007Date of Patent: April 13, 2010Assignee: Kabushiki Kaisha ToshibaInventor: Masakatsu Tsuchiaki
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Patent number: 7678652Abstract: A MOSFET-type semiconductor device includes a monocrystalline semiconductor layer formed in a shape of a thin wall on a insulating film, a gate electrode straddling over the semiconductor layer around the middle portion of the wall-shaped semiconductor layer via a gate insulating film, source and drain regions formed at the both ends of the semiconductor layer, a first metal-semiconductor compound layer formed on one of the side walls of each of source and drain regions of the semiconductor layer, and a second metal-semiconductor compound layer having a different composition and Schottky barrier height from that of the first metal-semiconductor compound layer on the other side wall of each of source and drain regions of the semiconductor layer.Type: GrantFiled: August 4, 2008Date of Patent: March 16, 2010Assignee: Kabushiki Kaisha ToshibaInventor: Masakatsu Tsuchiaki
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Publication number: 20100044766Abstract: Disclosed is a semiconductor device of n-type MOSFET structure, which comprises a semiconductor substrate having a device isolation region, diffusion regions formed in the semiconductor substrate, gate electrodes formed above the semiconductor substrate, and a F-containing NiSi layer formed on the diffusion regions and containing F atoms at a concentration of 3.0×1013 cm?2 or more in areal density, wherein a depth from the junction position formed between the diffusion region and the semiconductor substrate to the bottom of the F-containing NiSi layer is confined within the range of 20 to 100 nm, and the concentration of F atoms at an interface between the F-containing NiSi layer and the semiconductor substrate is 8.0×1018 cm?3 or more.Type: ApplicationFiled: October 23, 2009Publication date: February 25, 2010Inventor: Masakatsu TSUCHIAKI
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Patent number: 7622774Abstract: Disclosed is a semiconductor device of n-type MOSFET structure, which comprises a semiconductor substrate having a device isolation region, diffusion regions formed in the semiconductor substrate, gate electrodes formed above the semiconductor substrate, and a F-containing NiSi layer formed on the diffusion regions and containing F atoms at a concentration of 3.0×1013 cm?2 or more in areal density, wherein a depth from the junction position formed between the diffusion region and the semiconductor substrate to the bottom of the F-containing NiSi layer is confined within the range of 20 to 100 nm, and the concentration of F atoms at an interface between the F-containing NiSi layer and the semiconductor substrate is 8.0×1018 cm?3 or more.Type: GrantFiled: July 28, 2006Date of Patent: November 24, 2009Assignee: Kabushiki Kaisha ToshibaInventor: Masakatsu Tsuchiaki
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Publication number: 20090200592Abstract: A semiconductor device includes: a first source region and a first drain region formed at a distance from each other in a semiconductor substrate; a first gate insulating film formed on the semiconductor substrate between the first source region and the first drain region; a first gate electrode formed on the first gate insulating film; a first source electrode formed above the first source region and including a ferromagnetic layer having an easy axis of magnetization in a first direction; a first drain electrode formed above the first drain region and including a ferromagnetic layer magnetized in a second direction at an angle larger than 0 degrees but not larger than 180 degrees with respect to the first direction; and a second drain electrode formed above the first drain region, being located at a distance from the first drain electrode, and including a ferromagnetic layer magnetized in a direction substantially antiparallel to the second direction.Type: ApplicationFiled: September 19, 2008Publication date: August 13, 2009Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Masakatsu TSUCHIAKI, Yoshiaki Saito
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Publication number: 20090065877Abstract: A semiconductor device includes: a first MOSFET including: first source and drain regions formed at a distance from each other in a first semiconductor region; a first insulating film formed on the first semiconductor region between the first source region and the first drain region; a first gate electrode formed on the first insulating film; a first sidewall insulating film formed at side portions of the first gate electrode; a first single-crystal silicon layer formed on each of the first source and drain regions, and having at least an upper-face made of a {111} plane; a first NiSi layer formed at least on the first single-crystal silicon layer, and having a portion whose interface with the first single-crystal silicon is on the {111} plane of the first single-crystal silicon layer and a part of the portion of the first NiSi layer being in contact with the first sidewall insulating film; and a first TiN film being in contact with the portion of the first NiSi layer on the {111} plane of the first single-crType: ApplicationFiled: June 26, 2008Publication date: March 12, 2009Inventor: Masakatsu TSUCHIAKI
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Publication number: 20080299719Abstract: A MOSFET-type semiconductor device includes a monocrystalline semiconductor layer formed in a shape of a thin wall on a insulating film, a gate electrode straddling over the semiconductor layer around the middle portion of the wall-shaped semiconductor layer via a gate insulating film, source and drain regions formed at the both ends of the semiconductor layer, a first metal-semiconductor compound layer formed on one of the side walls of each of source and drain regions of the semiconductor layer, and a second metal-semiconductor compound layer having a different composition and Shottky barrier height from that of the first metal-semiconductor compound layer on the other side wall of each of source and drain regions of the semiconductor layer.Type: ApplicationFiled: August 4, 2008Publication date: December 4, 2008Inventor: Masakatsu Tsuchiaki
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Patent number: 7420230Abstract: A MOSFET-type semiconductor device includes a monocrystalline semiconductor layer formed in a shape of a thin wall on a insulating film, a gate electrode straddling over the semiconductor layer around the middle portion of the wall-shaped semiconductor layer via a gate insulating film, source and drain regions formed at the both ends of the semiconductor layer, a first metal-semiconductor compound layer formed on one of the side walls of each of source and drain regions of the semiconductor layer, and a second metal-semiconductor compound layer having a different composition and Shottky barrier height from that of the first metal-semiconductor compound layer on the other side wall of each of source and drain regions of the semiconductor layer.Type: GrantFiled: August 17, 2005Date of Patent: September 2, 2008Assignee: Kabushiki Kaisha ToshibaInventor: Masakatsu Tsuchiaki
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Publication number: 20080203440Abstract: A method of fabricating a semiconductor device having a pair of shallow silicided source and drain junctions with minimal leakage is disclosed. The semiconductor device typically has a MISFET structure with NiSi regions partially making up the source and drain regions. The fabrication method includes the steps of providing silicon surfaces having Si{110} crystal planes on both sides of this gate electrode and forming a plurality of nickel silicide (NiSi) regions, each having a rectangular planar shape whose shorter sides being equal or less than 0.5 ?m in length and running along a Si<100> direction.Type: ApplicationFiled: December 13, 2007Publication date: August 28, 2008Inventor: Masakatsu TSUCHIAKI
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Patent number: 7378344Abstract: A method for manufacturing a MOSFET equipped with a silicide layer over shallow source and drain junctions without leakage generation is provided. By restricting the temperature of manufacturing steps after the silicide formation below a critical temperature Tc, which is defined below as a function of a junction depth Dj from 20 nm to 60 nm, leakage generation is practically suppressed. Tc = a × Dj + b , ? where a = 6.11 ? ( 20 < Dj ? 26 ) = 1.60 ? ( 26 < Dj ? 60 ) , ? b = 290.74 ? ( 20 < Dj ? 26 ) = 408 ? ( 26 < Dj ? 60 ) , Dj is a junction depth (nm) measured from the lower surface of the silicide layer, and Tc is a critical temperature (° C.) during a heat treatment.Type: GrantFiled: August 21, 2006Date of Patent: May 27, 2008Assignee: Kabushiki Kaisha ToshibaInventors: Masakatsu Tsuchiaki, Shoko Tomita
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Publication number: 20070246781Abstract: A MOS semiconductor device includes a substrate having a first region with a Si(110) surface and a second region with a Si(100) surface, a p-channel MOSFET formed in the first region, and an n-channel MOSFET formed in the second region. The p-channel MOSFET including a first silicide layer formed on source/drain regions, and containing N atoms at an areal density of 8.5×1013 to 8.5×1014 cm?2, and F atoms at an areal density of less than 5.0×1012 cm?2. The n-channel MOSFET including a second silicide layer formed on a source/drain regions, and containing F atoms at an areal density of not less than 5.0×1013 cm?2.Type: ApplicationFiled: February 13, 2007Publication date: October 25, 2007Inventor: Masakatsu Tsuchiaki
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Publication number: 20070176209Abstract: A semiconductor device of complementary structure with increased carrier mobilities of both polarities by applying orientation-dependent mechanical stresses to their respective semiconductor channel regions, comprises a semiconductor region subjected to compressive stress in a first direction along a surface and tensile stress in a second direction different from the first direction, a field effect transistor of a first conductivity type formed in the semiconductor region and including source and drain regions separately arranged along the first direction and a field effect transistor of a second conductivity type formed in the semiconductor region and including source and drain regions separately arranged along the second direction.Type: ApplicationFiled: January 30, 2007Publication date: August 2, 2007Inventor: Masakatsu TSUCHIAKI