Abstract: A nonvolatile three-terminal element is provided that operates by controlling a bandgap in an electron state of a graphene-based material. An ion conductor (5) having hydrogen ion or oxygen ion conductivity is provided between graphene oxide or graphene (hereinafter, referred to as GO) (6), and a gate electrode (1). In addition, a drain electrode (2) and a source electrode (3) are provided on a GO (6) side.

Abstract: A double-side-coated surface stress sensor includes a sensing membrane structure portion where at least two ends opposite each other are fixed on a mounting portion; a receptor layer that coats both surfaces of the sensing membrane structure portion; and an element detecting a stress, which is provided in the vicinity of at least one of the fixed two ends, opposite each other, of the sensing membrane structure portion or at least one of the fixed two ends, opposite each other, of the mounting portion, in which in a detection output is obtained from the element based on the stress which is applied onto the receptor layer coating both of the surfaces of the sensing membrane structure portion. Accordingly, it is possible to provide a double-side-coated surface stress sensor which coats both surfaces of the sensing membrane structure portion by the receptor layer, thereby obtaining a sufficiently large detection output.

Abstract: A nonvolatile three-terminal element is provided that operates by controlling a bandgap in an electron state of a graphene-based material. An ion conductor (5) having hydrogen ion or oxygen ion conductivity is provided between graphene oxide or graphene (hereinafter, referred to as GO) (6), and a gate electrode (1). In addition, a drain electrode (2) and a source electrode (3) are provided on a GO (6) side.

Abstract: A double-side-coated surface stress sensor includes a sensing membrane structure portion where at least two ends opposite each other are fixed on a mounting portion; a receptor layer that coats both surfaces of the sensing membrane structure portion; and an element detecting a stress, which is provided in the vicinity of at least one of the fixed two ends, opposite each other, of the sensing membrane structure portion or at least one of the fixed two ends, opposite each other, of the mounting portion, in which in a detection output is obtained from the element based on the stress which is applied onto the receptor layer coating the both surfaces of the sensing membrane structure portion. Accordingly, it is possible to provide a double-side-coated surface stress sensor which coats both surfaces of the sensing membrane structure portion by the receptor layer, thereby obtaining a sufficiently large detection output.

Abstract: The object of the invention is to provide a three-terminal switch (electrochemical transistor) capable of achieving sharp on-off operation. A source electrode and a drain electrode are juxtaposed with an insulator interposed between them, and on the assembly there is an ion diffusion member such as Ta2O5 located. On the opposite surface of the ion diffusion member, there is a gate electrode located that is capable of supplying metal ions such as copper ions. By application of voltage to the gate electrode, the metal ions going out of the gate electrode are reversibly precipitated as metal on both source and drain electrodes as well as on the insulator near them, thereby controlling conduction and non-conduction between the source electrode and the drain electrode.

Abstract: An optical electric field enhancement element includes a nanorod which includes a plurality of conductive layers formed therein in a direction parallel to a longitudinal axis of the nanorod. Adjacent conductive layers are isolated from each other via an insulating layer. The nanorod exhibits an effect of enhancing an optical electric field.

Abstract: The object of the invention is to provide a three-terminal switch (electrochemical transistor) capable of achieving sharp on-off operation. A source electrode and a drain electrode are juxtaposed with an insulator interposed between them, and on the assembly there is an ion diffusion member such as Ta2O5 located. On the opposite surface of the ion diffusion member, there is a gate electrode located that is capable of supplying metal ions such as copper ions. By application of voltage to the gate electrode, the metal ions going out of the gate electrode are reversibly precipitated as metal on both source and drain electrodes as well as on the insulator near them, thereby controlling conduction and non-conduction between the source electrode and the drain electrode.

Abstract: A micro-switching element provided with a first electrode 4 containing an ionic conductor and a second electrode 5 composed of an electric conductor, wherein the first electrode 4 and the second electrode 5 are physically and electrically connected to each other through deposition of a metal ion from the ionic conductor, and wherein a photoresponsive film 9 that receives light to generate a carrier is disposed between the first electrode 4 and the second electrode 5 to fill up the space between the electrodes. Accordingly, a micro-switching element is provided of which the characteristic fluctuation is small and which hardly produces a problem of operation failure.

Abstract: The method for producing a surface enhanced infrared absorption sensor of the invention is characterized by: adsorbing metallic nanoparticles dispersed in a solution on a surface of a substrate, or allowing the adsorbed metallic nanoparticles to be grown in a solution, thereby forming a film; applying infrared light to the substrate from the side thereof opposite to the side on which the metallic nano-thin film is disposed; detecting evanescent waves exuding from the substrate; and regulating a surface enhanced infrared adsorption activity while monitoring surface enhanced infrared adsorption signals in situ, whereby the metallic nano-thin film is grown in the form of flat and discontinuous islands. According to the method, there is provided a production technique for a surface enhanced infrared absorption (SEIRA) sensor having a higher sensitivity and more excellent in the reproducibility.

Abstract: A micro-switching element provided with a first electrode 4 containing an ionic conductor and a second electrode 5 composed of an electric conductor, wherein the first electrode 4 and the second electrode 5 are physically and electrically connected to each other through deposition of a metal ion from the ionic conductor, and wherein a photoresponsive film 9 that receives light to generate a carrier is disposed between the first electrode 4 and the second electrode 5 to fill up the space between the electrodes. Accordingly, a micro-switching element is provided of which the characteristic fluctuation is small and which hardly produces a problem of operation failure.

Abstract: The present invention relates to a transistor for selecting a storage cell and a switch using a solid electrolyte. In a storage cell, a metal is stacked on a drain diffusion layer of a field-effect transistor formed on a semiconductor substrate surface. The solid electrolyte using the metal as a carrier is stacked on the metal. The solid electrolyte contacts with the metal via a gap, and the metal is connected to a common grounding conductor. A source of the field-effect transistor is connected to a column address line, and a gate of the field-effect transistor is connected to a row address line.

Abstract: The optical electric field enhancement element of the invention comprises a nanorod where a conductive layer and an insulating layer are laminated. In particular, the optical electric field enhancement element comprising a tungsten oxide nanorod exhibits a high enhancement effect not by an aggregate of fine crystals but by the crystal structure itself, therefore securing good reproducibility and a stable Raman scattering enhancement effect. A sensor comprising the optical electric field enhancement element enables various high-precision analyses heretofore impossible in the art.

Abstract: The method for producing a surface enhanced infrared absorption sensor of the invention is characterized by: adsorbing metallic nanoparticles dispersed in a solution on a surface of a substrate, or allowing the adsorbed metallic nanoparticles to be grown in a solution, thereby forming a film; applying infrared light to the substrate from the side thereof opposite to the side on which the metallic nano-thin film is disposed; detecting evanescent waves exuding from the substrate; and regulating a surface enhanced infrared adsorption activity while monitoring surface enhanced infrared adsorption signals in situ, whereby the metallic nano-thin film is grown in the form of flat and discontinuous islands. According to the method, there is provided a production technique for a surface enhanced infrared absorption (SEIRA) sensor having a higher sensitivity and more excellent in the reproducibility.

Abstract: A scanning probe microscope system capable of identifying an element with atomic scale spatial resolution comprises: an X-ray irradiation means for irradiating a measurement object with high-brilliance monochromatic X-rays having a beam diameter smaller than 1 mm; a probe arranged to oppose to the measurement object; a processing means for detecting and processing a tunneling current through the probe; and a scanning probe microscope having an alignment means for relatively moving the measurement object, the probe, and the incident position of the high-brilliance monochromatic X-rays to the measurement object.

Abstract: The present invention provides a solid electrolyte switching device, which can maintain an on or off state when the power source is removed, the resistance of which in on the state is low, and which is capable of integration and re-programming, and FPGA and a memory device using the same, and a method of manufacturing the same.

Abstract: There are provided a point contact array, in which a plurality of point contacts are arranged, each point contact electrically and reversibly controlling conductance between electrodes and being applicable to an arithmetic circuit, a logic circuit, and a memory device, a NOT circuit, and an electronic circuit using the same. A circuit includes a plurality of point contacts each composed of a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. The conductance of each point contact is controlled to realize the circuit. Ag2S, Ag2Se, Cu2S, or Cu2Se is preferably used as the compound conductive material. When a semiconductor or insulator material is interposed between the electrodes, a crystal or an amorphous material of GeSx, GeSex, GeTex, or WOx (0<x<100) is preferably used as the semiconductor or insulator material.

Abstract: A NOT circuit realized using an atomic switch serving as a two terminal device and including a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. Ag2S, Ag2Se, Cu2S, or Cu2Se is preferably used as the compound conductive material.

Abstract: A scanning probe microscope system capable of identifying an element with atomic scale spatial resolution comprises: an X-ray irradiation means for irradiating a measurement object with high-brilliance monochromatic X-rays having a beam diameter smaller than 1 mm; a probe arranged to oppose to the measurement object; a processing means for detecting and processing a tunneling current through the probe; and a scanning probe microscope having an alignment means for relatively moving the measurement object, the probe, and the incident position of the high-brilliance monochromatic X-rays to the measurement object.

Abstract: A digital probing type atomic force microscope (AFM) for measuring high aspect structures with high precision. A probe 21 is vibrated while moved to the vicinity of an atomic force region on a specimen surface. The position of the probe is measured when a specified atomic force is detected in the atomic force region. The probe is then moved away from the specimen surface. A servo system for maintaining a gap between the probe and specimen surface is stopped. The probe is moved to a measurement point along the specimen surface while kept away from the specimen. The vibration frequency is a frequency slightly offset from the cantilever resonance point. The atomic force is detected based on the vibration amplitude of the cantilever.

Abstract: The present invention relates to a transistor for selecting a storage cell and a switch using a solid electrolyte. In a storage cell, a metal is stacked on a drain diffusion layer of a field-effect transistor formed on a semiconductor substrate surface. The solid electrolyte using the metal as a carrier is stacked on the metal. The solid electrolyte contacts with the metal via a gap, and the metal is connected to a common grounding conductor. A source of the field-effect transistor is connected to a column address line, and a gate of the field-effect transistor is connected to a row address line.