Abstract: In a semiconductor device, on a heat dissipation portion of a lead frame opposite to a mounting portion on which a semiconductor element is mounted, a thin molding portion having a thickness of about 0.02 mm to 0.3 mm is formed by a second molding resin which is a high-heat-dissipation resin. A scale-like portion on which scale-shaped projections are consecutively formed is provided over both sides across a resin boundary portion of the heat dissipation portion. The scale-like portion reaches abutting surfaces of an upper die and a lower die of a mold used in a molding process. Thus, the same void inhibition effect as with an air vent is obtained.

Abstract: In a semiconductor device, on a heat dissipation portion of a lead frame opposite to a mounting portion on which a semiconductor element is mounted, a thin molding portion having a thickness of about 0.02 mm to 0.3 mm is formed by a second molding resin which is a high-heat-dissipation resin. A scale-like portion on which scale-shaped projections are consecutively formed is provided over both sides across a resin boundary portion of the heat dissipation portion. The scale-like portion reaches abutting surfaces of an upper die and a lower die of a mold used in a molding process. Thus, the same void inhibition effect as with an air vent is obtained.

Abstract: A semiconductor device includes a first insulating film, a first wiring, a second insulating film, and a second wiring. The first insulating film is formed on a semiconductor substrate. The first wiring is formed on the first insulating film. The second insulating film is provided on the first insulating film to cover the first wiring. The second wiring is formed on the second insulating film. Furthermore, the second insulating film has a first opening part and a second opening part which expose the first wiring. The second wiring has a seed layer and a first plating layer. The first plating layer covers an entire side surface of the seed layer. The seed layer is not provided in the second opening part and a periphery thereof.

Abstract: A nitride semiconductor device according to the present disclosure includes a substrate, a p-type GaN layer formed on a main surface of the substrate and made of AlxInyGa1-x-yN containing p-type impurities, where 0?X<1, 0?Y<1, and a Ti film formed on the p-type GaN layer. The Ti film is in a coherent or metamorphic state with respect to the p-type GaN layer.

Abstract: A semiconductor device includes a first insulating film, a first wiring, a second insulating film, and a second wiring. The first insulating film is formed on a semiconductor substrate. The first wiring is formed on the first insulating film. The second insulating film is provided on the first insulating film to cover the first wiring. The second wiring is formed on the second insulating film. Furthermore, the second insulating film has a first opening part and a second opening part which expose the first wiring. The second wiring has a seed layer and a first plating layer. The first plating layer covers an entire side surface of the seed layer. The seed layer is not provided in the second opening part and a periphery thereof.

Abstract: A semiconductor device comprises: a lower interconnect formed over a semiconductor substrate; an insulating film formed on the lower interconnect; a via hole penetrating the insulating film to reach the lower interconnect; a first barrier film covering bottom and side surfaces of the via hole; and a metal film filling the via hole covered with the first barrier film. A portion of the first barrier film covering a lower end of the side surface of the via hole is thicker than a portion covering the bottom surface of the via hole.

Abstract: The semiconductor device manufacturing method includes the steps of: applying a first wire including a barrier metal film, a seed film, and a wiring material film in a first wire trench formed in a first interlayer dielectric film; after a second interlayer dielectric film is formed on the first interlayer dielectric film, forming a via hole and a second wire trench in the second interlayer dielectric film so as to expose the wiring material film; applying a barrier metal film on the semiconductor device; and after the barrier metal film on the wiring material film is removed by using, for example, a re-sputtering process, applying a barrier metal film on the wiring material film. The re-sputtering process can remove an oxide film of impurity metal in the seed film applied on the wiring material film.

Abstract: A semiconductor device includes an embedded wire in a first wire trench formed in a first interlayer dielectric film, the embedded wire having a barrier metal, a first seed film, a second seed film, and a copper film. The first seed film is formed by a copper film containing metal, and the second film is formed by a copper film. The second seed film suppresses that the metal contained in the first seed film diffuses into a wiring material film in a manufacturing process.

Abstract: A second interlayer insulating film is formed on a first interlayer insulating film and a wiring including a Cu film, and a via and a trench are formed in the second interlayer insulating film so as to expose the Cu film. After a hollow having an inner diameter larger than that of the via is formed in the Cu film, a first barrier metal film is formed. Subsequently, the first barrier metal film is re-sputtered to fill the hollow with the first barrier metal film and to extend the via so as to have a rounded lower part. Next, a second barrier metal film and a Cu film are formed sequentially in the via and the trench. Then, the Cu film, the second barrier metal film, and the first barrier metal film on the second interlayer insulating film are removed.

Abstract: A semiconductor device comprises: a lower interconnect formed over a semiconductor substrate; an insulating film formed on the lower interconnect; a via hole penetrating the insulating film to reach the lower interconnect; a first barrier film covering bottom and side surfaces of the via hole; and a metal film filling the via hole covered with the first barrier film. A portion of the first barrier film covering a lower end of the side surface of the via hole is thicker than a portion covering the bottom surface of the via hole.

Abstract: A bump-attached tape carrier for mounting a semiconductor chip on a circuit substrate, the bump-attached tape carrier comprising, an insulating film, a conductor pattern formed on the insulating film, and metal bumps formed on the conductor pattern and adapted to be bonded with the semiconductor chip, wherein the metal bumps are respectively formed of a columnar body having a side wall substantially perpendicular to the conductor pattern.

Abstract: A rotor is formed by rotationally cutting a metal mass mounted on a machine tool shaft under computer control, and also its outer periphery is formed with annular grooves by rotational cutting. The rotor is rotated on a shaft while feeding an abrasive to it, while a workpiece set on a stage movable along three perpendicular axes, i.e., X-, Y and Z-axes, urged against the rotor by moving the stage in the Z-axis direction. The surface of the workpiece is polished by causing the stage to be moved in the X-axis direction and reciprocated in the Y-axis direction, the urging pressure being controlled by measuring it with a pressure sensor.