Abstract: The variation of the parasitic inductance generated at the output terminal of a transistor in the final stage of a multistage amplifier unit is reduced. One side of the semiconductor chip that includes the final stage transistor is put in contact with the inner wall of a square recess formed in a wiring substrate. The semiconductor chip is positioned and fixed accurately at the bottom of the recess, whereby the drain wire of the transistor is fixed. Then, a chip edge at which the drain electrode is disposed on top of the chip is put in contact with the inner wall of the recess, which is closer to the drain bonding pad. A metallized layer is formed of the same size as that of the chip at the bottom of the recess and a fusion bonding material is supplied on the metallized layer.

Abstract: The variation of the parasitic inductance generated at the output terminal of a transistor in the final stage of a multistage amplifier unit is reduced. One side of the semiconductor chip that includes the final stage transistor is put in contact with the inner wall of a square recess formed in a wiring substrate. The semiconductor chip is positioned and fixed accurately at the bottom of the recess, whereby the drain wire of the transistor is fixed. Then, a chip edge at which the drain electrode is disposed on top of the chip is put in contact with the inner wall of the recess, which is closer to the drain bonding pad. A metallized layer is formed of the same size as that of the chip at the bottom of the recess and a fusion bonding material is supplied on the metallized layer.

Abstract: The variation of the parasitic inductance generated at the output terminal of a transistor in the final stage of a multistage amplifier unit is reduced. One side of the semiconductor chip that includes the final stage transistor is put in contact with the inner wall of a square recess formed in a wiring substrate. The semiconductor chip is positioned and fixed accurately at the bottom of the recess, whereby the drain wire of the transistor is fixed. Then, a chip edge at which the drain electrode is disposed on top of the chip is put in contact with the inner wall of the recess, which is closer to the drain bonding pad. A metallized layer is formed of the same size as that of the chip at the bottom of the recess and a fusion bonding material is supplied on the metallized layer.

Abstract: The variation of the parasitic inductance generated at the output terminal of a transistor in the final stage of a multistage amplifier unit is reduced. One side of the semiconductor chip that includes the final stage transistor is put in contact with the inner wall of a square recess formed in a wiring substrate. The semiconductor chip is positioned and fixed accurately at the bottom of the recess, whereby the drain wire of the transistor is fixed. Then, a chip edge at which the drain electrode is disposed on top of the chip is put in contact with the inner wall of the recess, which is closer to the drain bonding pad. A metallized layer is formed of the same size as that of the chip at the bottom of the recess and a fusion bonding material is supplied on the metallized layer.

Abstract: In a method of manufacturing a high frequency module to be assembled by providing, on a wiring board, a chip part and a semiconductor pellet to be bare chip mounted and then mounting the chip part and the semiconductor pellet through soldering, the wiring board is separated from a heat block with the semiconductor pellet pressurized against the wiring board in a main heating portion heating and melting a reflow solder, thereby cooling a soldering portion. Consequently, the generation of a void in the soldering portion can be prevented and the connecting reliability of the soldering portion can be enhanced. In addition, a degree of mounting horizontality of the semiconductor pellet on the wiring board can be enhanced.

Abstract: In a method of manufacturing a high frequency module to be assembled by providing, on a wiring board, a chip part and a semiconductor pellet to be bare chip mounted and then mounting the chip part and the semiconductor pellet through soldering, the wiring board is separated from a heat block with the semiconductor pellet pressurized against the wiring board in a main heating portion heating and melting a reflow solder, thereby cooling a soldering portion. Consequently, the generation of a void in the soldering portion can be prevented and the connecting reliability of the soldering portion can be enhanced. In addition, a degree of mounting horizontality of the semiconductor pellet on the wiring board can be enhanced.