Abstract: An abnormality detection device, an abnormality detection method and an abnormality detection system for a rotating machine according to the present invention sample a vibration of a rotating machine at a predetermined sampling frequency, output for each predetermined period of time a set of a plurality of samples detected within the predetermined period of time, store the set of samples in a storage section, perform frequency analysis on the set of samples, and display in real time frequency analysis results in chronological order. A rotating machine according to the present invention includes the abnormality detection device.

Abstract: An abnormality detection device, an abnormality detection method and an abnormality detection system for a rotating machine according to the present invention sample a vibration of a rotating machine at a predetermined sampling frequency, output for each predetermined period of time a set of a plurality of samples detected within the predetermined period of time, store the set of samples in a storage section, perform frequency analysis on the set of samples, and display in real time frequency analysis results in chronological order. A rotating machine according to the present invention includes the abnormality detection device.

Abstract: A rotational misalignment between semiconductor wafers constituting a bonded wafer is calculated. A light source is arranged at a position which is on a front side of an opening of a notch and which is separated from an outer edge portion of a bonded wafer by a predetermined interval, and outputs light to irradiate the outer edge portion of the bonded wafer including the notch. A camera receives and photoelectrically converts reflected light that is specularly-reflected by the outer edge portion of the bonded wafer including the notch among the light outputted by the light source in order to output a brightness distribution of the reflected light as an image. A computer analyzes positions of notches from the image outputted by the camera to obtain a notch position misalignment, and further calculates a rotational misalignment between semiconductor wafers using a center position misalignment between the semiconductor wafers.

Abstract: A shape determining device (X) splits the original light beam from a light source (Y) into two light beams, directs the light beams to the front and back surfaces of the object (1) to be determined, and performs optical heterodyne interference using the split light beams at the front and back surfaces of the object (1) to be determined. In the shape determining device (X), each of the split light beams is further split into a main light beam and a subordinate light beam, the subordinate light beam interferes with the main light beam at each of the front and back surfaces before and after the illumination of the object (1) to be determined, the signals after the interference are phase-detected, and the difference between the phases acquired by the phase detection is detected at each of the front and back surfaces of the object (1) to be determined.

Abstract: A shape determining device includes first and second homodyne interferometers respectively provided for front and back surfaces of an object to be measured and a thickness distribution calculator that calculates a thickness distribution of the object based on intensities of first and second interference light beams respectively detected by the first and second homodyne interferometers for the front and back surfaces of the object at a plurality of measurement sites. The thickness distribution calculator calculates, for each interference light beam for which the intensity is detected by the first and second homodyne interferometers, a phase difference between the polarization components of a corresponding reference light beam and a corresponding object light beam in a corresponding non-interference light beam based on the intensity of the interference light beam, and calculates the thickness distribution based on a distribution of the calculated phase differences.

Abstract: A rotational misalignment between semiconductor wafers constituting a bonded wafer is calculated. A light source is arranged at a position which is on a front side of an opening of a notch and which is separated from an outer edge portion of a bonded wafer by a predetermined interval, and outputs light to irradiate the outer edge portion of the bonded wafer including the notch. A camera receives and photoelectrically converts reflected light that is specularly-reflected by the outer edge portion of the bonded wafer including the notch among the light outputted by the light source in order to output a brightness distribution of the reflected light as an image. A computer analyzes positions of notches from the image outputted by the camera to obtain a notch position misalignment, and further calculates a rotational misalignment between semiconductor wafers using a center position misalignment between the semiconductor wafers.

Abstract: An object of the present invention is to measure thickness distribution with precision by using a simple device configuration without being affected by vibrations of a to-be-measured object. In the present invention, for each of the front and the back surfaces of a to-be-measured object 1, each of light beams obtained by branching into two an emitted light beam from a laser light source 2 is further branched into two. Then, the light beams are reflected in reference surfaces and measurement points 1a and 1b mutually in a front and back relation, so that non-interference light beams Pax and Pbx each of which contains the reference light beam and the object light beam as mutually orthogonal polarization components are acquired. Then, each light beam is branched into a plurality. Onto one or more of the branched light beams, phase shift is performed in which a change is imparted to the phase difference between the orthogonal polarization components by using wavelength plates a261, a263, and a264 and the like.

Abstract: A shape determining device (X) splits the original light beam from a light source (Y) into two light beams, directs the light beams to the front and back surfaces of the object (1) to be determined, and performs optical heterodyne interference using the split light beams at the front and back surfaces of the object (1) to be determined. In the shape determining device (X), each of the split light beams is further split into a main light beam and a subordinate light beam, the subordinate light beam interferes with the main light beam at each of the front and back surfaces before and after the illumination of the object (1) to be determined, the signals after the interference are phase-detected, and the difference between the phases acquired by the phase detection is detected at each of the front and back surfaces of the object (1) to be determined.