Abstract: To provide a temporary bonding adhesive for a semiconductor wafer that reduces damage to a semiconductor wafer, makes it readily detachable, and can shorten the time required for thermal decomposition, and a manufacturing method for a semiconductor device using this. A temporary bonding adhesive for a semiconductor wafer, being a temporary bonding adhesive used for temporarily bonding a semiconductor wafer onto a supporting substrate in order to process a semiconductor wafer, and for detaching a semiconductor wafer from a supporting substrate by heating after processing, containing a resin composition whereof the 50% weight loss temperature decreases after irradiation by active energy rays.

Abstract: An object of the invention is to provide a method of manufacturing a light-emitting element, in which residue from a fixing resin layer is less likely to be left on a semiconductor layer and a supporting base in the case of manufacturing the light-emitting element by a laser lift-off technique. Furthermore, another object of the invention is to provide a highly reliable light-emitting element that is manufactured by the method of the present invention. The above-described objects are accomplished by applying a thermally decomposable resin composition as a fixing resin layer that fixes the semiconductor layer to a supporting base, and by thermally decomposing the fixing resin layer at the time of peeling off the semiconductor layer from the supporting base.

Abstract: A method of manufacturing a light receiving device 1 includes: providing a resin layer 14 containing a photo curing resin on a transparent substrate 13 where a plurality of transparent substrate portions 13A are integrated so that the resin layer covers the transparent substrate 13; selectively irradiating the resin layer 14 with light, followed by a developing process, so that the resin layer 14 remains in regions of the transparent substrate 13 which surround portions corresponding to regions facing light receiving portions 11 in the transparent substrate portions 13A; dividing the transparent substrate 13 into units of transparent substrate portions 13A so that a plurality of transparent substrate portions 13A are obtained; dividing the base substrate 12 into units of base substrate portions 12A so that a plurality of base substrate portions 12A are obtained; and joining the base substrate portions 12A and the transparent substrate portions 13A via the resin layer 14.

Abstract: Disclosed is a method for manufacturing an electronic device, the method including: placing an electronic component on a substrate 11; forming standing portions 13 on the surface of the substrate 11 on which the electronic component 10 is placed, the standing portions 13 comprising a thermally decomposable resin; applying an encapsulating material 14 so as to encapsulate the electronic component 10 and cover around the standing portions 13 while exposing a portion of each of the standing portions 13 from the surface of the encapsulating material 14; heating the standing portions 13 to decompose and remove the standing portions 13, thereby forming holes 141 through the encapsulating material 14; and placing a conductive material 15 in the holes 141.

Abstract: A resin composition of the present invention is used for providing a spacer 104 having a grid-like shape at a planar view thereof between a semiconductor wafer 101? and a transparent substrate 102. The resin composition includes a constituent material containing an alkali soluble resin, a thermosetting resin and a photo initiator. In the case where a semiconductor wafer 101? and a transparent substrate 102 are bonded together through a spacer 104 formed on a substantially overall surface thereof to obtain a bonded body 2000, and then the semiconductor wafer makes one-fifth thickness, a warpage of the bonded body 2000 is 3,000 ?m or less. Further, it is preferred that the warpage of the bonded body 2000 before the process thereof is 500 ?m or less, and an increasing ratio of the warpage of the bonded body 2000 after the process thereof is 600% or less.

Abstract: A method of manufacturing a semiconductor wafer bonding product according to the present invention includes: a step of preparing a spacer formation film including a support base having a sheet-like shape and a spacer formation layer provided on the support base and having photosensitivity; a step of attaching the spacer formation layer to a semiconductor wafer having one surface from a side of the one surface; a step of forming a spacer by subjecting the spacer formation layer to exposure and development to be patterned and removing the support base; and a step of bonding a transparent substrate to a region of the spacer where the removed support base was provided so that transparent substrate is included within the region. This makes it possible to manufacture a semiconductor wafer bonding product in which the semiconductor wafer and the transparent substrate are bonded together through the spacer uniformly and reliably.

Abstract: A method of manufacturing a semiconductor wafer bonding product according to the present invention includes: a step of preparing a spacer formation film including a support base having a sheet-like shape and a spacer formation layer provided on the support base and having photosensitivity; a step of attaching the spacer formation layer to a semiconductor wafer having one surface from a side of the one surface; a step of forming a spacer by subjecting exposure and development to the spacer formation layer to be patterned and removing the support base; a step of bonding a transparent substrate to a region of the spacer, with which the removed support base made contact, so as to be included within the region. This makes it possible to manufacture a semiconductor wafer bonding product in which the semiconductor wafer and the transparent substrate are bonded together through the spacer uniformly and reliably.

Abstract: According to one aspect of the present invention, a film for a resin spacer (10) comprises an adhesive layer (12) made of a resin composition and a cover film (14) covering a surface of the adhesive layer (12). In the above-described film for a resin spacer (10), an adhesion force C1 between the adhesive layer (12) and the cover film (14) and an adhesion force D between the adhesive layer (12) and a silicone resin are set so as to satisfy the condition C1>D. Consequently, it is possible to reduce resin adherence to a cutting table at the time of cutting the film for a resin spacer (10).

Abstract: A method of manufacturing a semiconductor wafer bonding product according to the present invention, including: a step of preparing a spacer formation film including a support base and a spacer formation layer; a step of attaching the spacer formation layer of the spacer formation film to a semiconductor wafer; a step of selectively exposing the spacer formation layer with an exposure light via a mask, which is placed at a side of the support base of the spacer formation film, so as to be passed through the support base; a step of removing the support base; a step of developing the spacer formation layer to form a spacer on the semiconductor wafer; and a step of bonding a transparent substrate to a surface of the spacer opposite to the semiconductor wafer.

Abstract: To provide a temporary bonding adhesive for a semiconductor wafer that reduces damage to a semiconductor wafer, makes it readily detachable, and can shorten the time required for thermal decomposition, and a manufacturing method for a semiconductor device using this. A temporary bonding adhesive for a semiconductor wafer, being a temporary bonding adhesive used for temporarily bonding a semiconductor wafer onto a supporting substrate in order to process a semiconductor wafer, and for detaching a semiconductor wafer from a supporting substrate by heating after processing, containing a resin composition composition whereof the 50% weight loss temperature decreases after irradiation by active energy rays.

Abstract: An object of the present invention is to provide a photosensitive resin composition which leaves a small amount of resin residues after patterning by light-exposure and development and can reduce condensation between the semiconductor wafer and the transparent substrate under a high temperature and high humidity environment, an adhesive film made of the photosensitive resin composition and a light-receiving device including the adhesive film. The photosensitive resin composition of the present invention contains an alkali soluble resin (A), a photopolymerization initiator (B) and a compound (C) having a phenolic hydroxyl group and a carboxyl group.

Abstract: A semiconductor wafer bonding product according to the present invention includes: a semiconductor wafer; a transparent substrate provided at a side of a functional surface of the semiconductor wafer; a spacer provided between the semiconductor wafer and the transparent substrate; and a bonded portion continuously provided along a periphery of the semiconductor wafer, the transparent substrate being bonded to the semiconductor wafer through the bonded portion. It is preferred that a minimum width of the bonded portion is 50 ?m or more.

Abstract: To provide a temporary bonding adhesive for a semiconductor wafer that can reduce damage to the semiconductor wafer, is easily detachable, and can shorten the time required for thermal decomposition, and a manufacturing method for a semiconductor device using the same. A temporary bonding adhesive for a semiconductor device is provided, being a temporary bonding adhesive used for temporarily bonding a semiconductor wafer onto a supporting substrate in order to process a semiconductor wafer, and for detaching a semiconductor wafer from a supporting substrate by heating after processing, containing a resin composition such that the difference between the 95% weight loss temperature and the 5% weight loss temperature is 1 degree Celsius?(95% weight loss temperature)?(5% weight loss temperature)?300 degrees Celsius.

Abstract: A light receiving device 1 includes a support substrate 12 provided thereon with a photodetector 11 including a photodetecting portion 111 and a base substrate 112 on which the photodetecting portion 111 is placed; and a transparent substrate 13 disposed so as to oppose the face of the support substrate 12 on which the photodetector 11 is provided. Between the support substrate 12 and the transparent substrate 13, a frame portion 14 is provided so as to surround the photodetector 11. The frame portion 14 is a photo-curing adhesive, and directly adhered to the transparent substrate 13 and the support substrate 12. Such structure provides a light receiving device capable of exhibiting the desired performance, and a method of manufacturing such light receiving device can also be provided.

Abstract: A light receiving device 1 includes a support substrate 12 provided thereon with a photodetector 11 including a photodetecting portion 111 and a base substrate 112 on which the photodetecting portion 111 is placed; and a transparent substrate 13 disposed so as to oppose the face of the support substrate 12 on which the photodetector 11 is provided. Between the support substrate 12 and the transparent substrate 13, a frame portion 14 is provided so as to surround the photodetector 11. The frame portion 14 is a photo-curing adhesive, and directly adhered to the transparent substrate 13 and the support substrate 12. Such structure provides a light receiving device capable of exhibiting the desired performance, and a method of manufacturing such light receiving device can also be provided.

Abstract: A semiconductor device comprises a semiconductor substrate comprised of an interposer having one surface and a semiconductor element provided on the one surface of the interposer, the semiconductor element including a light receiving portion for receiving light thereon; a transparent substrate having light-transmitting property and one surface facing the light receiving portion, the transparent substrate arranged in a spaced-apart relationship with the one surface of the interposer through a gap formed between the one surface of the interposer and the one surface of the transparent substrate; and a spacer formed in a shape of a frame, the spacer positioned between the one surface of the interposer and the one surface of the transparent substrate for regulating the gap, and the spacer having an inner surface and an outer surface, wherein the one surface of the interposer, the one surface of the transparent substrate and the inner surface of the spacer form a space which is hermetically sealed, and wherein the

Abstract: A semiconductor device comprises a semiconductor substrate comprised of an interposer having one surface and a semiconductor element provided on the one surface of the interposer, the semiconductor element including a light receiving portion for receiving light thereon; a transparent substrate having light-transmitting property and one surface facing the light receiving portion, the transparent substrate arranged in a spaced-apart relationship with the one surface of the interposer through a gap formed between the one surface of the interposer and the one surface of the transparent substrate; and a spacer formed in a shape of a frame, the spacer positioned between the one surface of the interposer and the one surface of the transparent substrate for regulating the gap, and the spacer having an inner surface and an outer surface, wherein the one surface of the interposer, the one surface of the transparent substrate and the inner surface of the spacer form a space which is hermetically sealed, and wherein the

Abstract: A method of manufacturing a light receiving device 1 includes: providing a resin layer 14 containing a photo curing resin on a transparent substrate 13 where a plurality of transparent substrate portions 13A are integrated so that the resin layer covers the transparent substrate 13; selectively irradiating the resin layer 14 with light, followed by a developing process, so that the resin layer 14 remains in regions of the transparent substrate 13 which surround portions corresponding to regions facing light receiving portions 11 in the transparent substrate portions 13A; dividing the transparent substrate 13 into units of transparent substrate portions 13A so that a plurality of transparent substrate portions 13A are obtained; dividing the base substrate 12 into units of base substrate portions 12A so that a plurality of base substrate portions 12A are obtained; and joining the base substrate portions 12A and the transparent substrate portions 13A via the resin layer 14.

Abstract: An anisotropic conductive adhesive contains conductive particles dispersed in a resin composition, wherein the resin composition includes a radical polymerization resin (A), an organic peroxide (B), a thermoplastic elastomer (C) and a phosphoric ester (D). The resin composition can further contain an epoxy silane coupling agent (E) represented by formula (2) or (3). The resin composition is mixed with other components after the radical polymerization resin (A), the thermoplastic elastomer (C), the phosphoric ester (D) and the epoxy silane coupling agent (E) are reacted. It is also possible to preliminarily react only the phosphoric ester (D) and the epoxy silane coupling agent (E) and to react the product of the preliminary reaction with the radical polymerization resin (A) and the thermoplastic elastomer (C), and then to add other components. The anisotropic conductive adhesive of the present invention can be used for electrical joining of electronic or electric parts of electrical apparatus.