Patents by Inventor Masakazu Kuwabara

Masakazu Kuwabara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nitride semiconductor substrate
    Patent number: 8759837
    Abstract: A nitride semiconductor substrate is featured in comprising: a GaN semiconductor layer grown on a base layer, which has a substantially triangular cross-section along the thickness direction thereof, a periodic stripe shapes, and uneven surfaces arranged on the stripes inclined surfaces; and an overgrown layer composed of AlGaN or InAlGaN on the GaN semiconductor layer.
    Type: Grant
    Filed: March 21, 2012
    Date of Patent: June 24, 2014
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Harumasa Yoshida, Yasufumi Takagi, Masakazu Kuwabara
  • Nitride semiconductor substrate
    Patent number: 8237194
    Abstract: A nitride semiconductor substrate is featured in comprising: a GaN semiconductor layer grown on a base layer, which has a substantially triangular cross-section along the thickness direction thereof, a periodic stripe shapes, and uneven surfaces arranged on the stripes inclined surfaces; and an overgrown layer composed of AlGaN or InAlGaN on the GaN semiconductor layer.
    Type: Grant
    Filed: March 17, 2008
    Date of Patent: August 7, 2012
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Harumasa Yoshida, Yasufumi Takagi, Masakazu Kuwabara
  • NITRIDE SEMICONDUCTOR SUBSTRATE
    Publication number: 20120175633
    Abstract: A nitride semiconductor substrate is featured in comprising: a GaN semiconductor layer grown on a base layer, which has a substantially triangular cross-section along the thickness direction thereof, a periodic stripe shapes, and uneven surfaces arranged on the stripes inclined surfaces; and an overgrown layer composed of AlGaN or InAlGaN on the GaN semiconductor layer.
    Type: Application
    Filed: March 21, 2012
    Publication date: July 12, 2012
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Harumasa YOSHIDA, Yasufumi Takagi, Masakazu Kuwabara
  • NITRIDE SEMICONDUCTOR SUBSTRATE
    Publication number: 20100102328
    Abstract: A nitride semiconductor substrate is featured in comprising: a GaN semiconductor layer grown on a base layer, which has a substantially triangular cross-section along the thickness direction thereof, a periodic stripe shapes, and uneven surfaces arranged on the stripes inclined surfaces; and an overgrown layer composed of AlGaN or InAlGaN on the GaN semiconductor layer.
    Type: Application
    Filed: March 17, 2008
    Publication date: April 29, 2010
    Applicant: HAMAMATSU PHOTONICKS K.K
    Inventors: Harumasa Yoshida, Yasufumi Takagi, Masakazu Kuwabara
  • Pulse nozzle
    Patent number: 5295509
    Abstract: A pulse nozzle of a reaction apparatus which obtains a very low temperature by expanding high-pressure and normal-temperature gas in heat insulation manner includes a fixed slit member disposed at an inlet of the nozzle and having a plurality of slit openings, a movable slit member having similar slit openings disposed along the fixed slit member, and two piezoelectric-crystal elements driven by an external pulse signal to slidably move the movable slit member with respect to the fixed slit member repeatedly to thereby open and close a flow of gas in the pulse manner. A plurality of the pulse nozzles are disposed in parallel to increase the capacity of the pulse nozzle.
    Type: Grant
    Filed: January 22, 1993
    Date of Patent: March 22, 1994
    Assignees: Doryokuro Kakunenryo Kaihatsu Jigyodan, Mitsubishi Jukogyo Kabushiki Kaisha
    Inventors: Osamu Suto, Eiji Suzuki, Norifumi Uehara, Keiji Yoshimura, Masakazu Kuwabara