Abstract: In the method of fabricating an optical semiconductor device, a semiconductor layer is formed on an InP region, and includes semiconductor films. A first etching mask is formed on the semiconductor layer. The semiconductor layer is etched through the first etching mask to form a semiconductor mesa and a first marking mesa, each mesa includes an active layer and an InP cladding layer, the InP cladding layer being provided on the active layer. The active layer is made of semiconductor material different from InP. An InP burying region is grown through the first etching mask on a side of the semiconductor mesa and a side of the first marking mesa to bury the semiconductor mesa and the first marking mesa. A second etching mask is formed on the InP burying region after removing the first etching mask, and has an opening located above the first marking mesa. InP in the InP burying region and the first marking mesa is etched through the second etching mask to form a second marking mesa.

Abstract: In the method of fabricating an optical semiconductor device, a semiconductor layer is formed on an InP region, and includes semiconductor films. A first etching mask is formed on the semiconductor layer. The semiconductor layer is etched through the first etching mask to form a semiconductor mesa and a first marking mesa, each mesa includes an active layer and an InP cladding layer, the InP cladding layer being provided on the active layer. The active layer is made of semiconductor material different from InP. An InP burying region is grown through the first etching mask on a side of the semiconductor mesa and a side of the first marking mesa to bury the semiconductor mesa and the first marking mesa. A second etching mask is formed on the InP burying region after removing the first etching mask, and has an opening located above the first marking mesa. InP in the InP burying region and the first marking mesa is etched through the second etching mask to form a second marking mesa.

Abstract: A production method of a semiconductor optical element includes: a step of forming an alignment mark on a laminate having an active layer comprised of a semiconductor; a step of forming a protective film on the alignment mark and forming an etching mask comprised of the same material as the protective film, on the laminate; a step of etching the laminate with the etching mask to form a mesa part; a step of forming a buried portion on a side face of the mesa part; a step of removing the etching mask while leaving the protective film, after the step of forming the buried portion; and a step of forming a semiconductor layer on the mesa part and on the buried portion, after the step of removing the etching mask.