Patents by Inventor Masakazu Shiozaki

Masakazu Shiozaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240131233
    Abstract: The purpose of the present invention is to provide a pre-filled syringe formulation with staked needle, which contains an antibody at a high concentration and can be produced on an industrial scale in a simple manner without causing clogging. A pre-filled syringe formulation with staked needle, in which a protein solution is packed. The pre-filled syringe formulation is characterized in that a cap formed with a material having low water vapor permeability is provided at the needle.
    Type: Application
    Filed: April 12, 2023
    Publication date: April 25, 2024
    Inventors: Rieko SHIOZAKI, Yuji YAMANAKA, Mika TAKAHASHI, Tadao YAMAZAKI, Masakazu FUKUDA, Shogo YAMASHITA
  • Patent number: 5179433
    Abstract: A breakdown evaluating test element insert an oxide film having thin thick portion and formed on a silicon wafer and a polysilicon film formed on the oxide film, in such a way that a capacitor is formed between the silicon wafer and the polysilicon film with the oxide film as dielectric. The area of the polysilicon film is made larger than that of the thin portion of the oxide film so that only the thin portion thereof is brought into breakdown at a predetermined probability by an electric field strength generated at the thin portion when an electric field is applied to the wafer and when no electron shower is used (no breakdown prevention countermeasure is taken) during ion implantation, for instance. Therefore, the effect of the electron shower can be confirmed by checking the resistivity of the thin oxide film portion after the wafer has been ion-implanted by using an electron shower.
    Type: Grant
    Filed: June 12, 1991
    Date of Patent: January 12, 1993
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hisanori Misawa, Masakazu Shiozaki
  • Patent number: 5144147
    Abstract: The present invention is directed to the cleaning of an ion implantation apparatus. The ion implantation apparatus of the present invention comprises a sample holder 21 and a gauge 23 acting as a passageway of an ion beam running toward a sample held by the sample holder. The gauge is provided with a gas inlet port 25 for introducing a reactive gas into the ion beam passageway. The reactive gas collides against the ion beam within the ion beam passageway so as to be ionized. The ionized reactive permits removing a stain attached to the ion implantation apparatus. If the ion implantation apparatus further comprises a bias source 26 for applying voltage of a desired polarity to the gauge, the cleaning can be performed more efficiently.
    Type: Grant
    Filed: August 28, 1991
    Date of Patent: September 1, 1992
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masakazu Shiozaki, Katsuya Okumura
  • Patent number: 4682204
    Abstract: A fuse element prepared from, for example, polycrystalline silicon is deposited on an insulating layer provided on the main surface of a semiconductor substrate in which an IC memory is formed. Connecting portions are integrally formed at both ends of the melting away portion of the fuse element. Each of the connecting portions has a stepped surface having stepped sections. The stepped surface is tightly contacted with a stepped surface having stepped sections formed on the insulating layer.
    Type: Grant
    Filed: December 11, 1985
    Date of Patent: July 21, 1987
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventors: Masakazu Shiozaki, Hidetaro Nishimura
  • Patent number: 4532401
    Abstract: An apparatus for cutting a faulty spot or area of a predetermined wiring pattern by radiating a laser beam and which includes a reset table in which a wafer chip is fixed in place on a support table. A radiating device is disposed above the rest table to permit the laser beam to be directed at the wiring pattern. A positioning device is connected to the radiating device to position the laser beam. Between the radiating device and the support table a cover is disposed to define a hermetically-sealed space including the wafer chip. A hole of the cover is coupled to a vacuum pump. After the space is placed in a vacuum the laser beam is radiated toward the wiring pattern to permit the portion of the wiring pattern to be cut.
    Type: Grant
    Filed: March 30, 1983
    Date of Patent: July 30, 1985
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventors: Masakazu Shiozaki, Hidetaro Nishimura